IFX1117GSV33

Voltage Regulator IFX 1117 Data Sheet Features • • • • • • • Output voltage 3.3 V or adjustable 1.0 A output current Low drop voltage < 1.2 V @ 800 mA Short circuit protected Overtemperature protected Operating range up to 15 V Industrial type P-SOT223-4 Functional Description The IFX 1117 is a monolithic integrated fixed NPN type voltage regulator that can supply loads up to 1.0 A. The device is housed in the small surface mounted SOT223 package. The IC is equipped with additional protection against overload, short circuit and overtemperature. The IFX 1117 GSV33 supplies a regulated output voltage of 3.3 V (±2%). The IFX 1117 GSV supplies an output voltage with ±2% precision adjustable via an external voltage divider. The input voltage for the IFX 1117 GSV33 ranges from 4.5 V (= VQ+VDR) to 15 V for a load current of 800 mA, for the maximum load current of 1.0 A a minimum input voltage of 4.7 V is required. The drop voltage VDR ranges from 1.1 V to 1.4 V depending on the load current level. The device operates in the temperature range of Tj = 0 to 125 °C. Type Ordering Code Package IFX 1117 GSV33 Q67006-A9681 P-SOT223-4-6 P-SOT223-4-4 IFX 1117 GSV Q67006-A9680 P-SOT223-4-6 P-SOT223-4-4 Data Sheet 1 Rev. 1.1, 2004-07-20 IFX 1117 I Q Control with Overtemperature Protection; Overcurrent Protection Internal Reference GND AES02840 Figure 1 Data Sheet Block Diagram for Fixed Output Voltage IFX 1117 GSV33 2 Rev. 1.1, 2004-07-20 IFX 1117 SOT223 Q 4 1 2 3 GND Q I AEP02868_1117_01 Figure 2 Pin Configuration IFX 1117 GSV33 (top view) Table 1 Pin Definitions and Functions IFX 1117 GSV33 Pin No. Symbol Function 1 GND Ground 2 Q Output; Connect output pin to GND via a capacitor CQ ≥ 10 µF with ESR ≤ 20 Ω (see also graph “Region of Stability”) 3 I Input 4 (Heatsink) Q Output; Connect to pin 2 Data Sheet 3 Rev. 1.1, 2004-07-20 IFX 1117 SOT223 Q 4 1 2 3 ADJ Q I AEP02868_1117_02 Figure 3 Pin Configuration IFX 1117 GSV (top view) Table 2 Pin Definitions and Functions IFX 1117 GSV Pin No. Symbol Function 1 ADJ Adjust; defines output voltage level by external voltage divider between Q, ADJ and GND. 2 Q Output; Connect output pin to GND via a capacitor CQ ≥ 10 µF with ESR ≤ 20 Ω (see also graph “Region of Stability”). 3 I Input 4 (Heatsink) Q Output; Connect to pin 2 Data Sheet 4 Rev. 1.1, 2004-07-20 IFX 1117 Table 3 Absolute Maximum Ratings Parameter Symbol Limit Values Min. Unit Test Condition Max. Input - Output Voltage Difference (variable device only) VI - VQ Voltage -0.3 20 V – Input Voltage (fixed voltage version only) Voltage VI -0.3 20 V – VQ IQ -0.3 20 V – – – – Internally limited VESD -2 2 kV Human Body Model -50 150 °C – -40 150 °C – Output Voltage Current ESD Rating Electrostatic discharge voltage Temperature Tstg Junction temperature Tj Storage temperature Note: Stresses above those listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 4 Operating Range Parameter Symbol Limit Values Unit Remarks VQ + VDR 15 V – 0 125 °C – – 164 K/W P-SOT223, no airflow, no heat sink area – 81 K/W P-SOT223 300 mm2 heat sink area – 4 K/W – Min. VI Junction temperature Tj Input Voltage Table 5 Max. Thermal Resistance Junction ambient Junction case Rthja Rthjc Note: In the operating range, the functions given in the circuit description are fulfilled. Data Sheet 5 Rev. 1.1, 2004-07-20 IFX 1117 Characteristics 3.3 V Fixed Output Voltage Device IFX 1117 GSV33 0 °C < Tj < 125 °C; VI = 5 V, IQ = 10 mA; unless otherwise specified. Parameter Symbol Limit Values min. typ. Unit Measuring Conditions max. Output voltage VQ 3.23 5 3.300 3.36 5 V 0 mA ≤ IQ ≤ 800 mA 4.7 V ≤ VI ≤ 10 V Output voltage VQ – 3.300 – V 0 mA ≤ IQ ≤ 1000 mA; 4.7 V ≤ VI ≤ 15V Line regulation ∆VQ – 1 6 mV 4.7 V ≤ VI ≤ 15V Load regulation ∆VQ – 1 10 mV 0 mA ≤ IQ ≤ 800 mA;1) – 2 – mV 0 mA ≤ IQ ≤ 1.0 A1) VDR Drop voltage VDR Drop voltage VDR Drop voltage VDR Current consumption; Iq Iq = II – IQ Temperature stability ∆VQ – 1.00 1.10 V – 1.05 1.15 V – 1.10 1.20 V – 1.30 1.40 V – 5 10 mA IQ = 100 mA2) IQ = 500 mA2) IQ = 800 mA2) IQ = 1.0 A2) IQ = 10 mA – 16.5 – mV 3) Long Term Stability – – 0.3 – % 3) Current limit IQmax 1100 – 2250 mA RMS Output Noise – – 30 – ppm Power Supply Ripple Rejection PSRR 60 65 – dB Drop voltage VQ = 0.5 V ppm of VQ, Tj = 25 °C 10 Hz ≤ f ≤ 10 kHz3) fr = 120 Hz, Vr = 1 VPP3) 1) Measured at constant junction temperature 2) Drop voltage measured when the output voltage has dropped 100 mV from the nominal value obtained at VI = 5.0 V. 3) Specified by design; not subject to production test. Data Sheet 6 Rev. 1.1, 2004-07-20 IFX 1117 Characteristics Adjustable Output Voltage Device IFX 1117 GSV 0 °C < Tj < 125 °C; VI = 5 V, IQ = 10 mA; unless otherwise specified. Parameter Symbol Limit Values min. typ. Unit Measuring Conditions max. Reference voltage VQ 1.22 5 1.250 1.27 0 V 10 mA ≤ IQ ≤ 800 mA; 1.4 V ≤ (VI-VQ) ≤ 10 V Output voltage VQ – 1.250 – V 10 mA ≤ IQ ≤ 1000 mA; 2.65 V ≤ VI ≤ 15 V Line regulation ∆VQ – 0.035 0.2 %1) 1.5 V ≤(VI-VQ)≤ 13.75 V Load regulation ∆VQ – 0.2 0.4 %1) 10 mA ≤ IQ ≤ 800 mA;2) – 0.25 – %1) 10 mA ≤ IQ ≤ 1.0 A 2) VDR VDR VDR VDR Iq – 1.00 1.10 V – 1.05 1.15 V – 1.10 1.20 V – 1.30 1.40 V – 1.7 5.0 mA IQ = 100 mA 3) IQ = 500 mA 3) IQ = 800 mA 3) IQ = 1.0 A 3) VI = 15 V IADJ ∆IADJ – 100 120 µA – 2 5 µA IQ = 10 mA 1.4 V ≤(VI-VQ)≤ 13.6 V; 10 mA ≤ IQ ≤ 800 mA Temperature stability ∆VQ – 0.5 – %1) 5) Long Term Stability – – 0.3 – %1) 5) Current limit IQmax 1100 – 2250 mA RMS Output Noise – – 30 – ppm Power Supply Ripple Rejection PSRR 65 70 – dB Drop voltage Drop voltage Drop voltage Drop voltage Minimum Load Current 4) Adjust Current Adjust Current Change VQ = 0.5 V ppm of VQ, Tj = 25 °C 10 Hz ≤ f ≤ 10 kHz 5) fr = 120 Hz, Vr = 1 VPP 5) 1) Related to VQ 2) Measured at constant junction temperature 3) Drop voltage measured when the output voltage has dropped 100 mV from the nominal value obtained at VI = 5.0 V. 4) Minimum load current required to maintain regulation 5) Specified by design; not subject to production test. Data Sheet 7 Rev. 1.1, 2004-07-20 IFX 1117 IFX 1117 GSV 33 II VI CI I 3 2 IQ Q CQ 100 nF VQ 1 GND IGND AES02937_1117 Figure 4 Measuring Circuit Application Information IFX 1117 GSV 33 I VI CI1 3 2 Q CI2 VQ CQ2 1 GND AES02816_1117 Figure 5 Data Sheet Typical Application Circuit IFX 1117 GSV33 8 Rev. 1.1, 2004-07-20 IFX 1117 Output The IFX 1117 requires a 10 µF output capacitor with ESR ≤ 20 Ω for the stability of the regulation loop. The use of a tantalum output capacitor is recommended. For the adjustable device IFX 1117 GSV the output voltage level can be defined by a voltage divider between Q, ADJ and GND. The output voltage calculates: R V Q = V REF ×  1 + -----2- + I ADJ × R 2 R1 (1) At the input of the regulator a capacitor is recommended to compensate line influences. As a minimum a 100 nF ceramic input capacitor should be used. If the regulator is used in an environment with long input lines an input capacitance of 10 µF is suggested. IFX 1117 GSV I VI CI1 3 2 Q CI2 VQ CQ2 R1 1 ADJ VQ - VADJ = VREF IADJ R2 CADJ AES02815_1117 Figure 6 Data Sheet Typical Application Circuit IFX 1117 GSV 9 Rev. 1.1, 2004-07-20 IFX 1117 Typical Performance Characteristics Output Voltage VQ versus Junction Temperature T j Dropout Voltage Vdr versus Output Current IQ VQ-TJ.VSD VDR-IQ.VSD 1300 ∆V Q [%] Vdr [mV] 1.0 1100 I Q = 10 mA T j = 25 °C 0.0 1000 Tj = 125 °C -1.0 900 -2.0 800 0 25 50 75 100 125 150 0 400 200 600 Tj [°C] 800 I Q [mA] Dropout Voltage Vdr versus Junction Temperature Tj Maximum Output Current IQ versus Junction Temperature Tj VDR-TJ.VSD 1300 IQMAX-TJ.VSD 2.2 I Q [A] Vdr [mV] 1100 VQ = 0.5 V 1.8 I Q = 800 mA I Q = 500 mA 1000 1.6 I Q = 100 mA 900 1.4 800 1.2 0 25 50 75 100 125 1.0 150 0 T j [°C] Data Sheet 10 25 50 75 100 125 150 T j [°C] Rev. 1.1, 2004-07-20 IFX 1117 Typical Performance Characteristics Adjust Pin Current IADJ versus Junction Temperature Tj Power Supply Ripple Rejection PSRR versus Frequency f IADJ.VSD PSRR.VSD 80 IFX1117GSV VI = 5 V PSRR [dB] I A DJ [µA] 88 60 84 50 80 40 76 30 0 25 50 75 100 IFX1117 GSV33 VI = 8 V VRIP P LE = 1 V I Q = 10 mA CQ = 10 µF Tantalum 10 125 T j [°C] IFX1117 GSV33 VI = 5 V 100 10k 1k 100k f [Hz] Region of Stability Version GSV33 Region of Stability Version GSV V_ESR-IQ.VSD V33_ESR-IQ.VSD ESR CQ [Ω ] ESR CQ [Ω ] C Q = 10 µF 10 Stable Region 1 C Q = 10 µF 10 Stable Region 1 T j = 125 °C 0.1 0.1 T j = 125 °C T j = 25°C T j = 25°C 0.01 0 40 80 120 0.01 160 40 80 120 160 I Q [mA] I Q [mA] Data Sheet 0 11 Rev. 1.1, 2004-07-20 IFX 1117 Typical Performance Characteristics Load Transient Response Version GSV33 Line Transient Response Version GSV33 V33_dVQ-dIQ.vsd V33_dVQ-dVI.vsd ∆ VQ ∆ VQ 50 50 0 0 [mV] [mV] -50 -50 VI = 5 V CQ = 10 µF Tantalum -100 IQ = 100 mA CQ = 10 µF Tantalum Ι Q [A] VI [V] 0.6 5.75 0.1 4.75 0 20 40 60 80 0 20 40 60 t [µs] 80 t [µs] Load Transient Response Version GSV Line Transient Response Version GSV V_dVQ-dIQ.vsd V_dVQ-dVI.vsd ∆ VQ ∆ VQ 3 3 0 0 -3 -3 [%] [%] V I - VQ = 3 V CQ = 10 µF Tantalum -6 -6 I Q = 100 mA C Q = 10 µF Tantalum VI - VQ [V] Ι Q [A] 0.6 3.5 0.1 2.5 0 20 40 60 0 80 t [µs] Data Sheet 20 40 60 80 t [µs] 12 Rev. 1.1, 2004-07-20 IFX 1117 Package Outlines 1.6 ±0.1 6.5 ±0.2 0.1 MAX. 2 B 0.5 MIN. 1 +0.2 acc. to DIN 6784 3.5 ±0.2 4 7 ±0.3 3 ±0.1 15˚ MAX. A 3 0.28 ±0.04 2.3 0.7 ±0.1 4.6 0.25 M A 0.25 M B GPS05560 Figure 7 P-SOT223-4-6, P-SOT223-4-4 (Plastic Small Outline Transistor) You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Dimensions in mm SMD = Surface Mounted Device Data Sheet 13 Rev. 1.1, 2004-07-20 IFX 1117 Revision History Version Date Changes Rev. 1.0 2004-06-01 Final Data Sheet Rev. 1.1 2004-07-20 “Typical Performance Characteristics” graphs added. Data Sheet 14 2004-07-20 Edition 2004-07-20 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany © Infineon Technologies AG 2004. All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.