IKA08N65ET6XKSA1

IKA08N65ET6 TRENCHSTOP™ IGBT6 TRENCHSTOP™ IGBT6 with soft, fast recovery antiparallel Rapid diode Features • • • • • • • • • • • • VCE = 650 V IC = 8 A Very low VCE(sat) 1.5 V (typ.) Maximum junction temperature Tvjmax = 175°C Short circuit withstand time 3 µs Very tight parameter distribution High ruggedness, temperature stable behavior Low VCE(sat) and positive temperature coefficient Low gate charge QG Pb-free lead plating; RoHS compliant Very soft, fast recovery antiparallel Rapid diode Product spectrum and PSpice Models: http://www.infineon.com/igbt/ G C E Potential applications • • • • General purpose drives (GPD) Air conditioning Other major home appliances Other small home appliances Product validation • Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Description C G E Type Package Marking IKA08N65ET6 PG-TO220-3 FP K08EET6 Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 1.00 2021-10-18 IKA08N65ET6 TRENCHSTOP™ IGBT6 Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 3 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 6 Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Datasheet 2 Revision 1.00 2021-10-18 IKA08N65ET6 TRENCHSTOP™ IGBT6 1 Package 1 Package Table 1 Characteristic values Parameter Symbol Note or test condition Values Min. Isolation test voltage RMS Visol Internal emitter inductance measured 5 mm (0.197 in) from case LE Storage temperature Tstg Thermal resistance, junction-ambient 2 f = +50/+60 Hz, t = 1 min 2500 7.0 -55 V nH °C 260 °C M 0.5 Nm Rth(j-a) 65 K/W wave soldering 1.6mm (0.063in.) from case for 10s IGBT Table 2 Maximum rated values Parameter Collector-emitter voltage Symbol Note or test condition VCE DC collector current, limited by Tvjmax 1) IC Pulsed collector current, tp limited by Tvjmax ICpuls Turn-off safe operating area Values Unit 650 V Th = 25 °C 16 A Th = 100 °C 10 Tvj ≥ 25 °C 25 A 25 A ±20 V ±30 V 3 µs Th = 25 °C 27.5 W Th = 100 °C 13.7 VCE ≤ 650 V, Tvj ≤ 175 °C Gate-emitter voltage VGE Transient gate-emitter voltage VGE tp ≤ 10 µs, D < 0.010 Short-circuit withstand time tSC VCC ≤ 360 V, VGE = 15 V, Allowed number of short circuits < 1000, Time between short circuits ≥ 1.0 s, Tvj = 150 °C Power dissipation Ptot 1) Max. 150 Soldering temperature Mounting torque, M3 screw Maximum of mounting processes: 3 Typ. Unit Limited by maximum junction temperature. Applicable for TO220 standard package. Datasheet 3 Revision 1.00 2021-10-18 IKA08N65ET6 TRENCHSTOP™ IGBT6 2 IGBT Table 3 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter breakdown voltage1) VBRCES IC = 0.1 mA, VGE = 0 V Collector-emitter saturation voltage VCEsat IC = 5.0 A, VGE = 15 V Typ. Unit Max. 650 V Tvj = 25 °C 1.5 Tvj = 125 °C 1.65 Tvj = 150 °C 1.75 6.4 V 30 µA 100 nA VGEth IC = 0.12 mA, VCE = VGE Zero gate-voltage collector current ICES VGE = 0 V, VCE = 650 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V Transconductance gfs IC = 5.0 A, VCE = 20 V, Tvj ≥ 25 °C 5.5 S Short-circuit collector current ISC VCC ≤ 360 V, VGE = 15 V, tSC ≤ 3 µs, Allowed number of short circuits < 1000 , Time between short circuits ≥ 1.0 s , Tvj = 150 °C 50 A Input capacitance Cies VCE = 25 V, VGE = 0 V, f = 1000 kHz 480 pF Output capacitance Coes VCE = 25 V, VGE = 0 V, f = 1000 kHz 29 pF Reverse transfer capacitance Cres VCE = 25 V, VGE = 0 V, f = 1000 kHz 8 pF Gate charge QG IC = 5.0 A, VGE = 15 V 17 nC Turn-on delay time tdon VCE = 400 V, VGE = 15 V, RGon = 47.0 Ω, RGoff = 47.0 Ω, Lσ = 30 nH, Cσ = 150 pF Tvj = 25 °C, IC = 5.0 A 20 ns Tvj = 150 °C, IC = 5.0 A 18 Tvj = 25 °C, IC = 5.0 A 12 Tvj = 150 °C, IC = 5.0 A 12 Tvj = 25 °C, IC = 5.0 A 59 Tvj = 150 °C, IC = 5.0 A 69 Tvj = 25 °C, IC = 5.0 A 53 Tvj = 150 °C, IC = 5.0 A 78 Turn-off delay time Fall time (inductive load) (table continues...) Datasheet Tvj = 25 °C Tvj = 150 °C tr tdoff tf VCE = 400 V, VGE = 15 V, RGon = 47.0 Ω, RGoff = 47.0 Ω, Lσ = 30 nH, Cσ = 150 pF VCE = 400 V, VGE = 15 V, RGon = 47.0 Ω, RGoff = 47.0 Ω, Lσ = 30 nH, Cσ = 150 pF VCE = 400 V, VGE = 15 V, RGon = 47.0 Ω, RGoff = 47.0 Ω, Lσ = 30 nH, Cσ = 150 pF 4 5.6 V Gate-emitter threshold voltage Rise time (inductive load) 4.8 1.9 240 ns ns ns Revision 1.00 2021-10-18 IKA08N65ET6 TRENCHSTOP™ IGBT6 3 Diode Table 3 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets IGBT thermal resistance, junction to case Rthjc IGBT thermal resistance, junction to heat sink Rthjh Operating junction temperature 1) VCE = 400 V, VGE = 15 V, RGon = 47.0 Ω, RGoff = 47.0 Ω, Lσ = 30 nH, Cσ = 150 pF VCE = 400 V, VGE = 15 V, RGon = 47.0 Ω, RGoff = 47.0 Ω, Lσ = 30 nH, Cσ = 150 pF Tvj = 25 °C, IC = 5.0 A 0.11 Tvj = 150 °C, IC = 5.0 A 0.14 Tvj = 25 °C, IC = 5.0 A 0.04 Tvj = 150 °C, IC = 5.0 A 0.07 Tvj = 25 °C, IC = 5.0 A 0.15 Tvj = 150 °C, IC = 5.0 A 0.21 Tvj -40 Max. mJ mJ mJ 5.46 K/W 5.46 K/W 175 °C Measured with filter network. Note: Electrical Characteristic, at Tvj = 25°C, unless otherwise specified. 3 Diode Table 4 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Diode forward current, limited by Tvjmax 1) IF Diode pulsed current, limited by Tvjmax IFpuls 1) VCE = 400 V, VGE = 15 V, RGon = 47.0 Ω, RGoff = 47.0 Ω, Lσ = 30 nH, Cσ = 150 pF Typ. Unit Values Unit 650 V Th = 25 °C 19.5 A Th = 100 °C 11 Tvj ≥ 25 °C 25 A Limited by maximum junction temperature. Applicable for TO220 standard package. Datasheet 5 Revision 1.00 2021-10-18 IKA08N65ET6 TRENCHSTOP™ IGBT6 3 Diode Table 5 Characteristic values Parameter Symbol Note or test condition Values Min. Diode forward voltage Reverse leakage current Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current VF IR trr Qrr Irrm dIrr/dt IF = 5.0 A VR = 650 V Typ. Max. Tvj = 25 °C 1.28 1.75 V Tvj = 125 °C 1.21 Tvj = 150 °C 1.15 30 µA Tvj = 25 °C VR = 400 V VR = 400 V VR = 400 V VR = 400 V Unit Tvj = 150 °C 240 Tvj = 25 °C, IF = 5.0 A, -diF/dt = 400 A/µs 43 Tvj = 150 °C, IF = 5.0 A, -diF/dt = 400 A/µs 65 Tvj = 25 °C, IF = 5.0 A, -diF/dt = 400 A/µs 0.150 Tvj = 150 °C, IF = 5.0 A, -diF/dt = 400 A/µs 0.315 Tvj = 25 °C, IF = 5.0 A, -diF/dt = 400 A/µs 4.9 Tvj = 150 °C, IF = 5.0 A, -diF/dt = 400 A/µs 7.2 Tvj = 25 °C, IF = 5.0 A, -diF/dt = 400 A/µs -530 Tvj = 150 °C, IF = 5.0 A, -diF/dt = 400 A/µs -340 ns µC A A/µs Diode thermal resistance, junction to case Rthjc 6.41 K/W Diode thermal resistance, junction to heat sink Rthjh 6.41 K/W 175 °C Operating junction temperature Note: Datasheet Tvj -40 For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. 6 Revision 1.00 2021-10-18 IKA08N65ET6 TRENCHSTOP™ IGBT6 4 Characteristics diagrams 4 Characteristics diagrams Forward bias safe operating area, IGBT IC = f(VCE) D = 0 , Tvj ≥ 25 °C, VGE ≥ 15 V, Th = 25 °C Power dissipation as a function of case temperature, IGBT Ptot = f(Tc) Tvj ≤ 175 °C 30 25 10 20 15 1 10 5 0 0.1 1 10 100 1000 25 Collector current as a function of case temperature, IGBT IC = f(Tc) Tvj ≤ 175 °C, VGE ≥ 15 V 10 50 75 100 125 150 175 Typical output characteristic, IGBT IC = f(VCE) Tvj = 25 °C 25 9 8 20 7 6 15 5 4 10 3 2 5 1 0 0 25 Datasheet 50 75 100 125 150 175 0.0 7 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Revision 1.00 2021-10-18 IKA08N65ET6 TRENCHSTOP™ IGBT6 4 Characteristics diagrams Typical output characteristic, IGBT IC = f(VCE) Tvj = 150 °C Typical transfer characteristic, IGBT IC = f(VGE) VCE = 50 V 25 25 20 20 15 15 10 10 5 5 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 Typical collector-emitter saturation voltage as a function of junction temperature, IGBT VCEsat = f(Tvj) VGE = 15 V 6 7 8 9 10 11 12 13 Typical switching times as a function of collector current, IGBT t = f(IC) VCE = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 47 Ω 2.6 100 2.2 1.8 10 1.4 1.0 0 Datasheet 25 50 75 100 125 150 1 175 2 8 4 6 8 10 Revision 1.00 2021-10-18 IKA08N65ET6 TRENCHSTOP™ IGBT6 4 Characteristics diagrams Typical switching times as a function of gate resistor, IGBT t = f(RG) IC = 5.0 A, VCE = 400 V, Tvj = 150 °C, VGE = 0/15 V 100 100 10 10 1 1 10 20 30 40 50 60 70 80 90 25 100 Gate-emitter threshold voltage as a function of junction temperature, IGBT VGEth = f(Tvj) IC = 0.12 mA 6 0.4 5 0.3 4 0.2 3 0.1 25 50 75 100 125 150 50 75 100 125 150 175 Typical switching energy losses as a function of collector current, IGBT E = f(IC) VCE = 400 V, Tvj = 150 °C, VGE = 0/15 V, RG = 47 Ω 2 Datasheet Typical switching times as a function of junction temperature, IGBT t = f(Tvj) IC = 5.0 A, VCE = 400 V, VGE = 0/15 V, RG = 47 Ω 0.0 175 2 9 3 4 5 6 7 8 9 10 Revision 1.00 2021-10-18 IKA08N65ET6 TRENCHSTOP™ IGBT6 4 Characteristics diagrams Typical switching energy losses as a function of gate resistor, IGBT E = f(RG) IC = 5.0 A, VCE = 400 V, Tvj = 150 °C, VGE = 0/15 V Typical switching energy losses as a function of junction temperature, IGBT E = f(Tvj) IC = 5.0 A, VCE = 400 V, VGE = 0/15 V, RG = 47 Ω 0.25 0.30 0.25 0.20 0.20 0.15 0.15 0.10 0.10 0.05 0.05 0.00 0.00 10 20 30 40 50 60 70 80 90 25 100 Typical switching energy losses as a function of collector emitter voltage, IGBT E = f(VCE) IC = 5.0 A, VGE = 0/15 V, Tvj = 150 °C, RG = 47 Ω 50 75 100 125 150 175 Typical gate charge, IGBT VGE = f(QGE) IC = 5.0 A 0.30 16 14 0.25 12 0.20 10 0.15 8 6 0.10 4 0.05 0.00 200 Datasheet 2 0 250 300 350 400 450 500 0 10 4 8 12 16 20 Revision 1.00 2021-10-18 IKA08N65ET6 TRENCHSTOP™ IGBT6 4 Characteristics diagrams Typical capacitance as a function of collector-emitter voltage, IGBT C = f(VCE) f = 1000 kHz, VGE = 0 V IGBT transient thermal impedance, IGBT Zth = f(tp) D = tp/T 1000 1 100 0.1 10 0.01 0.001 1E-6 1E-5 0.0001 0.001 0.01 1 0 5 10 15 20 25 30 Diode transient thermal impedance as a function of pulse width, Diode Zth = f(tp) D = tp/T 0.1 1 10 100 Typical diode forward current as a function of forward voltage, Diode IF = f(VF) 25 1 20 0.1 15 0.01 10 0.001 5 0.0001 1E-7 1E-6 1E-5 0.00010.001 0.01 0.1 Datasheet 1 10 0 100 0.5 11 1.0 1.5 2.0 2.5 Revision 1.00 2021-10-18 IKA08N65ET6 TRENCHSTOP™ IGBT6 4 Characteristics diagrams Typical diode forward voltage as a function of junction temperature, Diode VF = f(Tvj) Typical reverse recovery time as a function of diode current slope, Diode trr = f(diF/dt) VR = 400 V, IF = 5 A 1.8 90 1.6 75 1.4 60 1.2 45 1.0 30 0.8 25 50 75 100 125 150 15 175 200 Typical reverse recovery charge as a function of diode current slope, Diode Qrr = f(diF/dt) VR = 400 V, IF = 5 A 0.40 300 400 500 600 700 800 900 Typical reverse recovery current as a function of diode current slope, Diode Irr = f(diF/dt) VR = 400 V, IF = 5 A 10 9 0.35 8 0.30 7 0.25 6 0.20 5 0.15 0.10 200 Datasheet 4 3 300 400 500 600 700 800 900 200 12 300 400 500 600 700 800 900 Revision 1.00 2021-10-18 IKA08N65ET6 TRENCHSTOP™ IGBT6 4 Characteristics diagrams Typical diode peak rate of fall of reverse recovery current as a function of diode current slope, Diode dIrr/dt = f(diF/dt) VR = 400 V, IF = 5 A -200 -300 -400 -500 -600 -700 -800 200 Datasheet 300 400 500 600 700 800 900 13 Revision 1.00 2021-10-18 IKA08N65ET6 TRENCHSTOP™ IGBT6 5 Package outlines 5 Package outlines Package Drawing PG-TO220-3-FP Figure 1 Datasheet 14 Revision 1.00 2021-10-18 IKA08N65ET6 TRENCHSTOP™ IGBT6 6 Testing conditions 6 Testing conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 t2 t3 on = VCE x IC x d t 2% VCE t3 t4 t Figure B. Figure 2 Datasheet 15 Revision 1.00 2021-10-18 IKA08N65ET6 TRENCHSTOP™ IGBT6 Revision history Revision history Document revision Date of release Description of changes V2.1 2017-09-11 Final Datasheet V2.2 2017-11-30 New Gfs Value at VCE=20V V2.3 2019-09-13 Change of Rth/Zth values and maximum DC ratings 1.00 2021-10-18 Change of unit in thermal impedance figures Datasheet 16 Revision 1.00 2021-10-18 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-10-18 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAL157-004 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 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