IKA15N60TXKSA1

TRENCHSTOP™ Series IKA15N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed  Positive temperature coefficient in VCE(sat)  Low EMI  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ G E PG-TO220-3 (FullPak) Applications:  Air Condition  Inverters Type IKA15N60T VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package 600V 15A 1.5V 175C K15T60 PG-TO220-3 (FullPAK) Maximum Ratings Parameter Symbol Value Collector-emitter voltage, Tj ≥ 25C VCE 600 IC 18.3 Unit V DC collector current, limited by Tjmax TC = 25C 10.6 TC = 100C Pulsed collector current, tp limited by Tjmax ICpuls 45 Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs - 45 IF 17.2 A Diode forward current, limited by Tjmax TC = 25C 10.8 TC = 100C Diode pulsed current, tp limited by Tjmax IFpuls 45 Gate-emitter voltage VGE 20 V tSC 5 s Power dissipation TC = 25C Ptot 35.7 W Operating junction temperature Tj -40...+175 Storage temperature Solder temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Isolation Voltage Tstg -55...+150 Short circuit withstand time 2) VGE = 15V, VCC  400V, Tj  150C 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: IFAG IPC TD VLS C 260 Visol 2500 Vr m s 1s. 1 Rev. 2.6 25.07.2016 TRENCHSTOP™ Series IKA15N60T q Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 4.2 K/W RthJCD 4.8 RthJA 80 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j =2 5 C - 1.5 2.05 T j =1 7 5 C - 1.9 - T j =2 5 C - 1.65 2.05 T j =1 7 5 C - 1.6 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A Collector-emitter saturation voltage VCE(sat) VF Diode forward voltage V V G E = 15 V , I C = 15 A V G E = 0V , I F = 1 5 A Gate-emitter threshold voltage VGE(th) I C = 21 0µ A , V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V µA T j =2 5 C - - 40 T j =1 7 5 C - - 1000 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 15 A - 8.7 - S Integrated gate resistor RGint Ω - Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 860 - Output capacitance Coss V G E = 0V , - 55 - Reverse transfer capacitance Crss f= 1 MH z - 24 - Gate charge QGate V C C = 48 0 V, I C =1 5 A - 87 - nC - 7 - nH - 137.5 - A pF V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) IC(SC) V G E = 15 V ,t S C  5 s V C C = 4 0 0 V, T j  150C Allowed number of short circuits: 1s. IFAG IPC TD VLS 2 Rev. 2.6 25.07.2016 TRENCHSTOP™ Series IKA15N60T q Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. Typ. max. - 17 - - 11 - - 188 - - 50 - - 0.22 - - 0.35 - - 0.57 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=25 C, VCC=400V,IC=15A, VGE=0/15V,rG=15, L =154nH,C =39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =2 5 C , - 34 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 1 5 A, - 0.24 - µC Diode peak reverse recovery current Irrm d i F / d t =8 2 5 A/ s - 10.4 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 718 - A/s Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value min. Typ. max. - 17 - - 15 - - 212 - - 79 - - 0.34 - - 0.47 - - 0.81 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=175 C, VCC=400V,IC=15A, VGE=0/15V,rG=15, L =154nH,C =39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =1 7 5 C - 140 - ns Diode reverse recovery charge Qrr V R = 4 00 V , I F = 1 5 A, - 1.0 - µC Diode peak reverse recovery current Irrm d i F / d t =8 2 5 A/ s - 14.7 - A Diode peak rate of fall of reverse recovery current during t b d i r r /d t - 495 - A/s IFAG IPC TD VLS 3 Rev. 2.6 25.07.2016 TRENCHSTOP™ Series IKA15N60T q tp=2µs 30A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT TC=80°C 20A TC=110°C Ic 10A 10µs 10A 50µs 1A 1ms 10ms DC Ic 0.1A 0A 10Hz 100Hz 1kHz 10kHz 100kHz 1V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj  175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 15) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V) 30W IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 35W 25W 20W 15W 10W 15A 10A 5A 5W 0W 25°C 50°C 75°C 100°C 125°C 0A 25°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj  175C) IFAG IPC TD VLS 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE  15V, Tj  175C) Rev. 2.6 25.07.2016 TRENCHSTOP™ Series IKA15N60T q 40A 40A 30A 35A V G E =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 35A 15V 25A 13V 11V 20A 9V 15A 7V 10A 5A 30A 15V 13V 25A 11V 20A 9V 15A 7V 10A 5A 0A 0A 0V 1V 2V 3V 0V 35A 30A 25A 20A 15A 10A T J =175°C 5A 25°C 0A 0V 2V 4V 6V 2V 2.5V 3V IC =30A 2.0V 1.5V I C =15A 1.0V IC =7.5A 0.5V 0.0V 0°C 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) IFAG IPC TD VLS 1V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT V G E =20V 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.6 25.07.2016 TRENCHSTOP™ Series IKA15N60T q t d(off) t d(off) tf t d(on) 10ns t, SWITCHING TIMES t, SWITCHING TIMES 100ns 100ns tf tr t d(on) tr 1ns 10ns 0A 5A 10A 15A 20A  25A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, rG = 15Ω, Dynamic test circuit in Figure E)     RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 15A, Dynamic test circuit in Figure E) t, SWITCHING TIMES t d(off) 100ns tf t d(on) 10ns VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 6V m ax. typ. 5V 4V m in. 3V 2V 1V tr 25°C 50°C 75°C 0V -50°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 15A, rG=15Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.21mA) 6 Rev. 2.6 25.07.2016 TRENCHSTOP™ Series due to diode recovery E ts * 1.2m J E off 0.8m J E on * 0.4m J E, SWITCHING ENERGY LOSSES due to diode recovery E, SWITCHING ENERGY LOSSES *) E on and E ts include losses 1.6 m J *) E on and E ts include losses 1.6m J IKA15N60T q E ts * 1.4 m J 1.2 m J 1.0 m J 0.8 m J 0.6 m J E off 0.4 m J E on * 0.2 m J 0.0m J 0A 5A 10A 15A 20A 25A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, rG = 15Ω, Dynamic test circuit in Figure E)          RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 15A, Dynamic test circuit in Figure E) 0.9m J 1.2m J *) E on and E ts include losses E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) E on and E ts include losses due to diode recovery 0.8m J 0.7m J 0.6m J E ts * 0.5m J 0.4m J E off 0.3m J 0.8m J E ts * 0.6m J E off 0.4m J 0.2m J E on * E on * 0.2m J 25°C due to diode recovery 1.0m J 50°C 0.0m J 300V 75°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 15A, rG = 15Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS 350V 400V 450V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 15A, rG = 15Ω, Dynamic test circuit in Figure E) 7 Rev. 2.6 25.07.2016 TRENCHSTOP™ Series IKA15N60T q 1nF 15V 120V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE C iss 480V 10V 100pF C oss 5V C rss 0V 0nC 10pF 20nC 40nC 60nC 80nC 100nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=15 A) 0V 10V 20V 30V 40V 50V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12µs 200A 150A 100A 50A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE  400V, Tj  150C) IFAG IPC TD VLS 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25°C, TJmax