IKQ100N120CH7
High speed 1200 V TRENCHSTOP™ IGBT 7 Technology
High speed 1200 V TRENCHSTOP™ IGBT 7 Technology co-packed with full rated current, soft-commutating,
ultra-fast recovery and low Qrr emitter controlled 7 Rapid diode
TO-247PLUS – 3Pin
Features
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•
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VCE = 1200 V
IC = 100 A
Maximum junction temperature Tvjmax = 175°C
Best-in-class high speed IGBT co-packed with full rated current, low Qrr and soft-commutating
high speed diode
Low saturation voltage VCEsat = 1.7 V at Tvj = 25°C
Optimized for high efficiency in high speed hard switching topologies (2-L inverter, 3-L NPC
T-type, ...)
Easy paralleling capability due to positive temperature coefficient in VCEsat
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models: http://www.infineon.com/igbt/
2021-10-27
restricted
Copyright © Infineon Te
Potential applications
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Industrial UPS
EV-Charging
String inverter
Welding
Product validation
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
Description
C
G
E
Type
Package
Marking
IKQ100N120CH7
PG-TO247-3-PLUS-NN3.7
K100MCH7
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.20
2023-07-03
IKQ100N120CH7
High speed 1200 V TRENCHSTOP™ IGBT 7 Technology
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
3
Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
4
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
6
Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Datasheet
2
Revision 1.20
2023-07-03
IKQ100N120CH7
High speed 1200 V TRENCHSTOP™ IGBT 7 Technology
1 Package
1
Package
Table 1
Characteristic values
Parameter
Symbol Note or test condition
Values
Unit
Min.
Typ.
Max.
Internal emitter
inductance measured 5
mm (0.197 in.) from case
LE
13
nH
Storage temperature
Tstg
-55
150
°C
Soldering temperature
Tsold
wave soldering 1.6 mm (0.063 in.) from case
for 10 s
260
°C
Thermal resistance,
junction-ambient
Rth(j-a)
40
K/W
IGBT thermal resistance,
junction-case
Rth(j-c)
0.16
0.21
K/W
Diode thermal resistance,
junction-case
Rth(j-c)
0.3
0.39
K/W
2
IGBT
Table 2
Maximum rated values
Parameter
Symbol Note or test condition
Collector-emitter voltage
DC collector current,
limited by Tvjmax
Pulsed collector current, tp
limited by Tvjmax
Turn-off safe operating
area
VCE
IC
ICpulse
Values
Unit
1200
V
Tc = 25 °C
166
A
Tc = 100 °C
139
Tvj ≥ 25 °C
limited by bondwire
400
A
VCC ≤ 800 V, VCE,peak < 1200 V, VGE = 0/15 V,
RGoff ≥ 4 Ω, Tvj ≤ 175 °C
400
A
Gate-emitter voltage
VGE
±20
V
Transient gate-emitter
voltage
VGE
tp ≤ 0.5 µs, D
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