PTMA210452ELV1R250

PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz PTMA210452EL Package H-33265-8 PTMA210452FL Package H-34265-8 • Designed for wide RF and modulation bandwidths and low memory effects Typical two-carrier WCDMA performance at 2140 MHz, 28 V - Average output power = 3.2 W - Linear Gain = 28 dB - Efficiency = 10.5% - IMD3 = –47 dBc d • pr od Features uc t The PTMA210452FL and PTMA210452FL are wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use in all typical modulation formats from 1900 to 2200 MHz. These devices are offered in thermally-enhanced ceramic packages with solder-friendly plating for cool and reliable operation. s Description Typical two-tone performance, 2140 MHz, 28 V - Output power (PEP) = 45 W at IM3 = –30 dBc - Efficiency = 32% • Capable of handling 10:1 VSWR @ 28 V, 45 W (CW) output power • Integrated ESD protection. Meets HBM Class 1B (minimum), per JESD22-A114F • Thermally-enhanced packages, Pb-free and RoHS compliant, with solder-friendly plating sc on tin ue • RF Characteristics di Two-carrier WCDMA Measurements (tested in Infineon test fixture) VDD = 28 V, IDQ1 = 200 mA (tuned for linearity), IDQ2 = 450 mA (tuned for linearity & efficiency), POUT = 3.2 W average, ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF Characteristic Symbol Min Typ Max Unit Input Return Loss IRL — –16 –10 dB Gain Gps 26.5 28 — dB Drain Efficiency ηD 9 10.5 — % Intermodulation Distortion, 2-channel WCDMA IMD –43 –47 — dBc All published data at TCASE = 25°C unless otherwise indicated *See Infineon distributor for future availability. ESD: Electrostatic discharge sensitive device—observe handling precautions! Data Sheet 1 of 11 Rev. 08, 2015-01-14 PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution RF Characteristics Small-signal CW Measurements (not subject to production test—verified by design/characterization in Infineon test fixture) Conditions Symbol Gain Flatness 1 W / 30 MHz ΔG — — td Group Delay ƒ = 2140 MHz DC Characteristics Conditions Symbol Drain Leakage Current VDS = 28 V, VGS = 0 V VDS = 63 V, VGS = 0 V VGS = 10 V, VDS = 0 V On-state Resistance Stage 1 VGS = 10 V, VDS = 0.1 V d Gate Leakage Current Unit 0.10 0.5 dB –1 +0.6 +1 º/60 MHz — — ns Typ 2.16 Min Typ Max Unit IDSS — — 1.0 µA IDSS — — 10.0 µA IGSS — — 1.0 µA RDS(on) — 1.1 — Ω VGS 2.0 2.5 3.0 V pr od Stage 1 Characteristics Min uc t Characteristic Phase Linearity Max s VDD = 28 V, IDQ1 = 200 mA, IDQ2 = 450 mA, POUT = 1 W, ƒ = 2140 MHz VDS = 28 V, IDQ1 = 200 mA, Stage 2 Characteristics Conditions Symbol Min Typ Max Unit VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA RDS(on) — 0.16 — Ω VGS 2.0 2.5 3.0 V Drain Leakage Current Gate Leakage Current On-state Resistance sc on Drain-source Breakdown Voltage di Operating Gate Voltage Data Sheet tin ue Operating Gate Voltage Stage 2 VGS = 10 V, VDS = 0.1 V VDS = 28 V, IDQ2 = 450 mA 2 of 11 Rev. 08, 2015-01-14 PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Maximum Ratings Parameter Symbol Value Unit VDSS 65 V Gate-Source Voltage VGS –0.5 to +12 V Junction Temperature TJ 200 °C Input Power PIN 25 dBm Storage Temperature Range TSTG –40 to +150 Thermal Resistance (TCASE = 70°C) Stage 1 RθJC Stage 2 RθJC s Drain-Source Voltage uc t pr od Ordering Information °C 3.5 °C/W 1.3 °C/W Package Outline Package Description Shipping PTMA210452EL V1 H-33265-8 Thermally-enhanced slotted flange Tray PTMA210452EL V1 R250 H-33265-8 Thermally-enhanced slotted flange Tape & Reel PTMA210452FL V1 H-34265-8 Thermally-enhanced earless flange PTMA210452FL V1 R250 H-34265-8 ue d Type and Version Tape & Reel tin Thermally-enhanced earless flange Tray di sc on Typical Performance (data taken in a production test fixture) *See Infineon distributor for future availability. Data Sheet 3 of 11 Rev. 08, 2015-01-14 PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution di sc on tin ue d pr od uc t s Typical Performance (cont.) Data Sheet 4 of 11 Rev. 08, 2015-01-14 PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution ue d pr od uc t s Typical Performance (cont.) Broadband Circuit Impedance Z Source Ω 5 4 MHz R jX R jX 1900 25.2 20.4 8.8 12.2 2110 26.1 27.8 6.1 16.5 2140 26.2 28.9 5.9 17.1 2170 26.5 30.3 5.6 17.8 2200 26.6 31.6 5.2 18.6 Z0 = 50 Ω 0. 45 0. 0 Z Load Ω 0. di sc on tin Frequency Z Load 2200 MHz Z Source 0. 3 RAT O 1900 MHz 1900 MHz A RD GE N E 0. 2 R --> 2200 MHz Data Sheet 5 of 11 Rev. 08, 2015-01-14 PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Reference Circuit — for evaluation only VD1 VD2 C2 10μF C1 100μF 50V C3 1μF C4 0.1μF C5 12pF C19 12pF C20 0.1μF C21 1μF C23 100μF 50V C22 10μF 11 1 2 3 1 2 C29 1.1pF C8 0.1μF 8 4 3 C30 1.8pF C9 12pF 5 6 8 7 9 RF_OUT C31 3pF pr od C7 1μF PTMA210452EL PTMA210452FL 5 6 7 VG1 C6 10μF 4 C32 12pF uc t RF_IN s DUT 10 VG2 C10 10μF C11 1μF C12 0.1μF C13 12pF C24 12pF C25 0.1μF C26 1μF C27 10μF C28 100μF 50V Circuit Assembly Information tin Reference circuit schematic for ƒ = 2140 MHz ue d a 2 1 0 4 5 2 e f_ l b d _ 7 -3 1 -0 8 PTMA210452EL or PTMA210452FL Test Fixture Part No. LTN/PTMA210452 PCB sc on DUT Rogers RO4350 RF LDMOS Integrated Power Amplifier ICs εr = 3.48, 0.76 mm [.030"] thick, 1 oz. copper Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower 1 2 3 4 5 6 7 8 9 10, 11 Data Sheet Electrical Characteristics at 2140 MHz Dimensions: L x W (mm) Dimensions: L x W (in.) 0.129 λ, 49.7 Ω 11.00 x 1.70 0.433 x 0.067 0.114 λ, 49.7 Ω 9.68 x 1.70 0.381 x 0.067 0.040 λ, 10.4 Ω 3.10 x 13.00 0.122 x 0.512 0.013 λ, 10.4 Ω 1.02 x 13.00 0.039 x 0.512 0.024 λ, 34.1 Ω 2.01 x 3.00 0.079 x 0.118 0.066 λ, 34.1 Ω 5.46 x 3.00 0.215 x 0.118 0.162 λ, 43.4 Ω 13.67 x 2.11 0.538 x 0.083 0.004 λ, 49.7 Ω 0.38 x 1.70 0.015 x 0.067 0.050 λ, 49.7 Ω 4.24 x 1.70 0.167 x 0.067 0.128 λ, 61.2 Ω 11.00 x 1.19 0.433 x 0.047 di Microstrip 6 of 11 Rev. 08, 2015-01-14 PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Reference Circuit (cont.) VD 1 V D2 C1 C23 RF_IN C29 C9 C8 C11 C30 C5 pr od C3 C4 uc t C21 C20 C19 C2 s C22 RF_OUT C32 C13 C12 C31 d C7 ue C6 C10 tin VG1 V G2 C24 C25 C26 C27 C28 sc on VD 2 a 2 1 0 4 5 2 e f _ l c d _ 4 - 3 0 - 0 8 Reference circuit assembly diagram (not to scale) Component di Circuit Assembly Table Description Suggested Supplier P/N or Comment C1, C23, C28 Electrolytic capacitor 100 µF, 50 V Digi-Key PCE3718CT-ND C2, C6, C10, C22, C27 Ceramic capacitor 10 µF Murata GRM422Y5V106Z050AL C3, C7, C11, C21, C26 Ceramic capacitor 1 µF Digi-Key 445-1411-2-ND C4, C8, C12, C20, C25 Capacitor, 0.1 µF Digi-Key 399-1267-2-ND C5, C9, C13, C19, C24, C32 Ceramic capacitor 12 pF ATC 600S120JT C29 ATC 600S1R1BT Ceramic capacitor 1.1 pF C30 Ceramic capacitor 1.8 pF ATC 600S1R8BT C31 Ceramic capacitor 3 pF ATC 600S3R0BT Not used C14, C15, C16, C17, C18 Data Sheet 7 of 11 Rev. 08, 2015-01-14 PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Package Specifications Package H-33265-8 Outline [.600] 7. 11 [.280] (45° X 2.03 [.08]) 4X R 0.13 [.05] MAX C L 2. 54±0. 51 [.100±.020] 10.16 [. 400] 5 6 7 CL tin 2X R1.59 [R.063] 4X R1.52 [R.060] 10. 16 [.400] ue 9. 55 [. 376] REF d 2X 3.48 2X 2.21 [.137] [. 087] 1. 02 [. 040] S H -33265 8 - _po _12- 13-2011 _old inf o 20.32 [.800] sc on di 15.24±0.51 [.600±.020] 6X 0.406 [.016] 0. 76 [. 030] SPH 1. 57 [.062] 9.78 [.385] pr od 4 4X R 0.63 [.025] MAX 3.68±. 38 [.145±.015] (2.73 [.107]) CL 1 2 3 2X 4. 57 [. 180] uc t s 8 6. C L CL Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Pins: see page 10 for complete list and pinout diagram. 3. Lead thickness: 0.127 ± 0.025 [0.005 ± 0.001]. 4. Gold plating less than 0.25 micron [10 microinch]. 5. All tolerances ± 0.127 [0.005] unless specified otherwise. 6. Exposed metal plane on bottom of ceramic insulator. 7. Primary dimensions are inches, alternate dimensions are mm. Data Sheet 8 of 11 Rev. 08, 2015-01-14 PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Package Specifications (cont.) Package H-34265-8 Outline (45° X 2.03 [.08]) 7. 11 [.280] C L 2.54±0. 51 4X R 0.13 [.05] MAX 8 10.16 [. 400] 1 2 3 4 4X R 0.63 [.025] MAX 5 6 7 6X 0.406 0. 76 [. 016] [. 030] sc on tin ue d 2X 4.57 [.180] 2X 3. 48 2X 2.21 [.137] [. 087] 9.55 [.376] REF 15.24±0.51 [. 600±.020] pr od CL uc t s [.100±.020] 10.16 [.400] di SPH 1.57 [.062] 3.68±.38 [.145±. 015] 1.02 [.040] H- 34265- 8_po_12- 13- 2011_ood inf o CL 10.16 [. 400] S Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Pins: see page 10 for complete list and pinout diagram. 3. Lead thickness: 0.127 ± 0.025 [0.005 ± 0.001]. 4. Gold plating less than 0.25 micron [10 microinch]. 5. All tolerances ± 0.127 [0.005] unless specified otherwise. 6. Primary dimensions are inches, alternate dimensions are mm. Data Sheet 9 of 11 Rev. 08, 2015-01-14 PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Package Specifications (cont.) Package H-3X265-8 Pinout 1 8 VD1 2 VG1 thermal FET 3 VG1 4 RF In 5 VG1 6 5 7 6 uc t 4 Source 1 8 7 VG2 VG2 thermal FET RF Out ue d a210452 ef l P D pi nout 2008 10 07 pr od 3 Function S (Flange) s Pin # 2 di sc on tin Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/rfpower Data Sheet 10 of 11 Rev. 08, 2015-01-14 PTMA210452EL V1 / PTMA210452FL V1 Confidential, Limited Internal Distribution Revision History: 2015-01-14 Data Sheet Previous Version: 2011-11-10, Data Sheet Page Subjects (major changes since last revision) Products discontinued. Please see PD Notes: PD_215_14. We Listen to Your Comments uc t Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: s All pr od highpowerRF@infineon.com sc on Edition 2015-01-14 Published by Infineon Technologies AG 81726 Munich, Germany tin ue d To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International © 2007 Infineon Technologies AG All Rights Reserved. di Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 of 11 Rev. 08, 2015-01-14