SPA11N65C3

SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 V DS 650 V RDS(on) 0.38 Ω ID 11 A PG-TO220FP PG-TO220 • Extreme dv/dt rated • High peak current capability • Improved transconductance Type Package Ordering Code Marking SPP11N65C3 PG-TO220 Q67040-S4557 11N65C3 SP000216318 11N65C3 Q67040-S4561 11N65C3 SPA11N65C3 PG-TO220FP SPI11N65C3 PG-TO262 Maximum Ratings Symbol Parameter Value SPP_I Continuous drain current Unit SPA ID A TC = 25 °C 11 111) TC = 100 °C 7 71) 33 33 Pulsed drain current, tp limited by T jmax ID puls A Avalanche energy, single pulse EAS 340 340 EAR 0.6 0.6 Avalanche current, repetitive tAR limited by T jmax IAR 4 4 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, T C = 25°C Ptot 125 33 Operating and storage temperature Tj , Tstg mJ ID=2.5A, V DD=50V Avalanche energy, repetitive tAR limited by T jmax 2) ID=4A, VDD=50V Rev. 2.91 Page 1 -55...+150 W °C 2009-11-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 480 V, ID = 11 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 1 Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.8 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 3) - 35 - - - 260 Soldering temperature, wavesoldering T sold K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS V GS=0V, I D=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, I D=4A Gate threshold voltage VGS(th) ID=500µA, VGS=VDS Zero gate voltage drain current IDSS V DS=600V, V GS=0V, Values Unit min. typ. max. 650 - - - 730 - 2.1 3 3.9 V breakdown voltage Tj=25°C - 0.1 1 Tj=150°C - - 100 - - 100 Gate-source leakage current IGSS V GS=20V, V DS=0V Drain-source on-state resistance RDS(on) V GS=10V, I D=7A Gate input resistance Rev. 2.91 RG µA Ω Tj=25°C - 0.34 0.38 Tj=150°C - 0.92 - f=1MHz, open drain - 0.86 - Page 2 nA 2009-11-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 Electrical Characteristics Parameter Transconductance Symbol g fs Conditions Values Unit min. typ. max. - 8.3 - S pF V DS≥2*I D*RDS(on)max, ID=7A Input capacitance Ciss V GS=0V, VDS=25V, - 1200 - Output capacitance Coss f=1MHz - 390 - Reverse transfer capacitance Crss - 30 - Effective output capacitance,4) Co(er) - 45 - - 85 - energy related Effective output capacitance,5) V GS=0V, V DS=0V to 480V Co(tr) time related Turn-on delay time td(on) V DD=380V, V GS=0/10V, - 10 - Rise time tr ID=11A, - 5 - Turn-off delay time td(off) RG=6.8Ω - 44 70 Fall time tf - 5 9 - 5.5 - - 22 - - 45 60 - 5.5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =480V, ID =11A VDD =480V, ID =11A, nC VGS =0 to 10V Gate plateau voltage V(plateau) VDD =480V, ID =11A 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P V AV=EA R*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 80% V o(er) oss DS DSS. 5C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% VDSS. Rev. 2.91 Page 3 2009-11-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 Electrical Characteristics Symbol Parameter Inverse diode continuous Conditions Values min. typ. max. - - 11 - - 33 TC =25°C IS Unit A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS =0V, IF =IS - 1 1.2 V Reverse recovery time trr VR =480V, IF =IS , - 400 600 ns Reverse recovery charge Qrr diF /dt=100A/µs - 6 - µC Peak reverse recovery current Irrm - 41 - A Peak rate of fall of reverse dirr /dt - 1200 - A/µs Tj =25°C recovery current Typical Transient Thermal Characteristics Value Symbol Unit SPP_I SPA Rth1 0.015 0.15 Rth2 0.03 Rth3 Symbol Value Unit SPP_I SPA Cth1 0.0001878 0.0001878 0.03 Cth2 0.0007106 0.0007106 0.056 0.056 Cth3 0.000988 0.000988 Rth4 0.197 0.194 Cth4 0.002791 0.002791 Rth5 0.216 0.413 Cth5 0.007285 0.007401 Rth6 0.083 2.522 Cth6 0.063 0.412 R th1 R th,n Tj K/W T case Ws/K External Heatsink P tot (t) C th1 C th2 C th,n T amb Rev. 2.91 Page 4 2009-11-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 1 Power dissipation 2 Power dissipation FullPAK Ptot = f (TC) Ptot = f (TC) SPP11N65C3 35 140 W W 120 110 25 P tot P tot 100 90 20 80 70 15 60 50 10 40 30 20 5 10 0 0 20 40 60 80 100 120 °C 0 160 0 20 40 60 80 100 120 TC 3 Safe operating area 4 Safe operating area FullPAK ID = f ( VDS ) ID = f (VDS) parameter : D = 0 , TC=25°C parameter: D = 0, TC = 25°C 10 2 2 10 A °C 160 TC A 10 0 10 1 10 0 ID 1 ID 10 10 -1 10 -2 10 tp = 0.0008 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 0 Rev. 2.91 10 1 10 2 V 10 V DS 3 10 -1 10 -2 10 Page 5 tp = 0.0008 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 0 10 1 10 2 V 10 VDS 2009-11-30 3 SPP11N65C3,SPA11N65C3 SPI11N65C3 5 Transient thermal impedance FullPAK 6 Typ. output characteristic ZthJC = f (tp) ID = f (VDS); Tj=25°C parameter: tp = 10 µs, VGS parameter: D = t p/t 1 10 40 K/W 0 32 7V 28 10 10 10 ID Z thJC 10 20V 10V 8V A -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse -2 6,5V 24 20 6V 16 12 -3 5,5V 8 5V 4 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 4,5V 0 1 0 3 6 9 12 15 18 V 27 VDS 21 tp 7 Typ. output characteristic 8 Typ. drain-source on resistance ID = f (VDS); Tj=150°C parameter: tp = 10 µs, VGS RDS(on)=f(ID) parameter: Tj=150°C, VGS 2 22 20V 8V 7V 7.5V A 18 Ω R DS(on) 16 ID 4.5V 4V 6V 14 5V 6V 5.5V 1.6 1.4 5.5V 12 1.2 10 5V 8 1 6 4.5V 0.8 4V 0.6 4 6.5V 8V 20V 2 0 0 5 10 15 V 0.4 25 0 V DS Rev. 2.91 Page 6 2 4 6 8 10 12 14 16 A ID 20 2009-11-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 9 Drain-source on-state resistance 10 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 7 A, V GS = 10 V parameter: tp = 10 µs SPP11N65C3 2.1 40 Ω A 25°C 1.8 28 1.4 ID R DS(on) 32 1.6 1.2 24 150°C 20 1 16 0.8 12 0.6 98% 0.4 8 typ 4 0.2 0 -60 -20 20 60 100 0 °C 180 0 2 4 6 8 10 12 Tj V 15 VGS 11 Typ. gate charge 12 Forward characteristics of body diode VGS = f (QGate) IF = f (V SD) parameter: ID = 11 A pulsed parameter: Tj , tp = 10 µs SPP11N65C3 16 10 V 2 SPP11N65C3 A 0,2 VDS max 10 10 1 10 0 IF VGS 12 0,8 VDS max 8 6 T j = 25 °C typ 4 T j = 150 °C typ T j = 25 °C (98%) 2 T j = 150 °C (98%) 10 0 0 10 20 30 40 50 nC 70 0 QGate Rev. 2.91 -1 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 7 2009-11-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 13 Typ. switching time 14 Typ. switching time t = f (ID), inductive load, T j=125°C t = f (RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, R G=6.8Ω par.: VDS=380V, VGS=0/+13V, I D=11 A 350 70 ns ns 60 td(off) 55 250 50 t t 45 200 40 td(off) td(on) tr tf 35 150 30 25 20 100 tf 15 td(on) 10 50 tr 5 0 0 2 4 6 8 0 A 12 0 10 20 30 40 50 Ω ID 70 RG 15 Typ. drain current slope 16 Typ. drain source voltage slope di/dt = f(RG), inductive load, Tj = 125°C dv/dt = f(RG), inductive load, Tj = 125°C par.: VDS=380V, VGS=0/+13V, I D=11A par.: VDS=380V, VGS=0/+13V, I D=11A 140 3000 V/ns A/µs dv/dt(off) 120 dv/dt di/dt 110 2000 100 90 80 1500 70 60 1000 50 di/dt(off) 500 40 dv/dt(on) 30 di/dt(on) 20 0 0 20 40 60 80 10 Ω 120 0 RG Rev. 2.91 10 20 30 40 50 Ω 70 RG Page 8 2009-11-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 17 Typ. switching losses 18 Typ. switching losses E = f (I D), inductive load, Tj=125°C E = f(R G), inductive load, T j=125°C par.: VDS=380V, VGS=0/+13V, R G=6.8Ω par.: VDS=380V, VGS=0/+13V,I D=11A 0.04 0.24 *) Eon includes SPD06S60 diode commutation losses mWs *) Eon includes SPD06S60 diode commutation losses mWs 0.03 Eoff E E 0.16 0.025 0.02 0.12 0.015 0.08 Eon* 0.01 Eon* 0.04 0.005 Eoff 0 0 2 4 6 0 A 8 12 0 10 20 30 40 50 ID 70 RG 19 Avalanche SOA 20 Avalanche energy IAR = f (tAR) EAS = f (T j) par.: T j ≤ 150 °C par.: ID = 2.5 A, V DD = 50 V 350 4 A mJ 3 Tj(Start)=25°C 250 E AS I AR Ω 2.5 200 2 Tj(Start)=125°C 150 1.5 100 1 50 0.5 0 -3 10 Rev. 2.91 10 -2 10 -1 10 0 10 1 10 2 µs 10 t AR 0 20 4 Page 9 40 60 80 100 120 °C 160 Tj 2009-11-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 21 Drain-source breakdown voltage 22 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: EAR=0.6mJ 785 300 V 745 725 P AR V(BR)DSS W 705 685 200 150 665 100 645 625 50 605 585 -60 -20 20 60 100 °C 0 4 10 180 10 5 Hz Tj 10 f 23 Typ. capacitances 24 Typ. Coss stored energy C = f (V DS) Eoss=f(V DS) parameter: VGS=0V, f=1 MHz 10 4 7.5 µJ pF Ciss 10 6 3 C E oss 5.5 5 4.5 10 4 2 Coss 3.5 3 2.5 10 1 2 Crss 1.5 1 0.5 10 0 0 100 200 300 400 V 0 600 0 V DS Rev. 2.91 100 200 300 400 V 600 VDS Page 10 2009-11-30 6 SPP11N65C3,SPA11N65C3 SPI11N65C3 Definition of diodes switching characteristics Rev. 2.91 Page 11 2009-11-30 SPP11N65C3, SPA11N65C3 SPI11N65C3 PG-TO220-3-1, PG-TO220-3-21 Rev. 2.91 Page 12 2009-11-30 SPP11N65C3, SPA11N65C3 SPI11N65C3 PG-TO220-3-31/3-111 Fully isolated package ( 2500 VAC; 1 minute ) Rev. 2.91 Page 13 2009-11-30 SPP11N65C3, SPA11N65C3 SPI11N65C3 PG-TO262-3-1, PG-TO262-3-21 (I²-PAK) Rev. 2.91 Page 14 2009-11-30 SPP11N65C3,SPA11N65C3 SPI11N65C3 Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.91 Page 15 2009-11-30