SPA20N65C3XKSA1

SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology V DS RDS(on) 650 V 0.19 Ω ID 20.7 A • Worldwide best R DS(on) in TO 220 • Ultra low gate charge PG-TO262 PG-TO220FP PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 1 • High peak current capability 2 3 P-TO220-3-31 • Improved transconductance Type Package Ordering Code SPP20N65C3 PG-TO220 Q67040-S4556 Marking 20N65C3 SPA20N65C3 PG-TO220FP SP000216362 20N65C3 SPI20N65C3 PG-TO262 Q67040-S4560 20N65C3 Maximum Ratings SPP_I Continuous drain current Unit Value Symbol Parameter SPA A ID TC = 25 °C 20.7 20.71) TC = 100 °C 13.1 13.11) Pulsed drain current, tp limited by Tjmax ID puls 62.1 62.1 A Avalanche energy, single pulse EAS 690 690 mJ EAR 1 1 Avalanche current, repetitive tAR limited by Tjmax IAR 7 7 A Gate source voltage VGS ±20 ±20 V Gate source voltage AC (f >1Hz) VGS ±30 ±30 Power dissipation, TC = 25°C Ptot 208 34.5 Operating and storage temperature T j , Tstg ID=3.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=7A, VDD =50V Rev. 3.0 Page 1 -55...+150 W °C 2007-08-30 SPP20N65C3, SPA20N65C3 SPI20N65C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit VDS = 480 V, ID = 20.7 A, T j = 125 °C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 0.6 Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.6 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm2 cooling area 3) - 35 - - - 260 Soldering temperature, wavesoldering Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Values min. typ. max. - - - 730 - 2.1 3 3.9 Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 650 Drain-Source avalanche V(BR)DS VGS=0V, ID=7A Unit V breakdown voltage Gate threshold voltage VGS(th) ID=1000µA, VGS=VDS Zero gate voltage drain current I DSS VDS=600V, V GS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 3.0 RG µA Tj=25°C - 0.1 1 Tj=150°C - - 100 VGS=20V, V DS=0V - - 100 Ω VGS=10V, ID=13.1A Tj=25°C - 0.16 0.19 Tj=150°C - 0.43 - f=1MHz, open drain - 0.54 - Page 2 nA 2007-08-30 SPP20N65C3, SPA20N65C3 SPI20N65C3 Electrical Characteristics Parameter Transconductance Symbol gfs Conditions VDS≥2*ID*R DS(on)max, Values Unit min. typ. max. - 17.5 - S pF ID=13.1A Input capacitance Ciss VGS=0V, VDS=25V, - 2400 - Output capacitance Coss f=1MHz - 780 - Reverse transfer capacitance Crss - 50 - - 83 - - 160 - - 10 - Effective output capacitance,4) Co(er) VGS=0V, energy related VDS=0V to 480V Effective output capacitance,5) Co(tr) time related Turn-on delay time td(on) VDD=380V, VGS=0/13V, ns ID=20.7A, RG=3.6Ω, Tj =125 Rise time tr VDD=380V, VGS=0/13V, - 5 - Turn-off delay time td(off) ID=20.7A, - 67 100 Fall time tf RG=3.6Ω - 4.5 12 V DD=480V, ID=20.7A - 11 - - 33 - - 87 114 - 5.5 - Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg V DD=480V, ID=20.7A, nC V GS=0 to 10V Gate plateau voltage V(plateau) VDD=480V, ID=20.7A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4C o(er) 5C o(tr) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Rev. 3.0 Page 3 2007-08-30 SPP20N65C3, SPA20N65C3 SPI20N65C3 Electrical Characteristics Parameter Symbol Inverse diode continuous IS Conditions Values Unit min. typ. max. - - 20.7 - - 62.1 TC=25°C A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD V GS=0V, IF=IS - 1 1.2 V Reverse recovery time trr V R=480V, IF=IS , - 500 800 ns Reverse recovery charge Qrr diF/dt=100A/µs - 11 - µC Peak reverse recovery current Irrm - 70 - A Peak rate of fall of reverse dirr /dt - 1400 - A/µs Tj=25°C recovery current Typical Transient Thermal Characteristics Value Symbol Unit SPP_I SPA Rth1 0.00769 0.00769 Rth2 0.015 Rth3 Symbol Value SPP_I SPA Cth1 0.0003763 0.0003763 0.015 Cth2 0.001411 0.001411 0.029 0.029 Cth3 0.001931 0.001931 Rth4 0.114 0.163 Cth4 0.005297 0.005297 Rth5 0.136 0.323 Cth5 0.012 0.008453 Rth6 0.059 2.526 Cth6 0.091 0.412 Tj K/W Unit R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 3.0 Page 4 2007-08-30 SPP20N65C3, SPA20N65C3 SPI20N65C3 1 Power dissipation 2 Power dissipation FullPAK Ptot = f (TC) Ptot = f (TC) 240 SPP20N65C3 35 W W 200 25 160 Ptot Ptot 180 140 20 120 15 100 80 10 60 40 5 20 0 0 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 TC 3 Safe operating area 4 Safe operating area FullPAK ID = f ( VDS ) ID = f (VDS) parameter : D = 0 , TC=25°C parameter: D = 0, TC = 25°C 10 2 °C 160 TC 10 2 10 1 10 1 ID A ID A 10 0 10 -1 10 -2 0 10 Rev. 3.0 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 1 10 -1 10 2 10 V VDS 3 Page 5 10 -2 0 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 1 10 2 10 V VDS 2007-08-30 3 SPP20N65C3, SPA20N65C3 SPI20N65C3 5 Transient thermal impedance FullPAK 6 Typ. output characteristic ZthJC = f (tp) ID = f (VDS); Tj =25°C parameter: D = tp/t parameter: tp = 10 µs, VGS 10 1 80 K/W 20V 10V 8V A 10 0 7V ID ZthJC 60 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 50 6,5V 40 6V 30 5,5V 20 5V 10 10 -3 -6 10 10 -5 10 -4 10 -3 10 -2 10 -1 4,5V 0 0 1 s 10 5 10 15 VDS 7 Typ. output characteristic 8 Typ. drain-source on resistance ID = f (VDS); Tj =150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, VGS 45 1.5 Ω 20V 10V 7V A 1.3 6V RDS(on) 35 ID 25 V tp 30 1.1 4V 4.5V 5V 5.5V 6V 6.5V 20V 1 5.5V 25 1.2 0.9 20 0.8 5V 15 0.7 0.6 4.5V 10 0.5 5 0 0 0.4 2 4 6 8 0.3 0 10 12 14 16 18 20 22 V 25 VDS Rev. 3.0 Page 6 5 10 15 20 25 30 40 A ID 2007-08-30 SPP20N65C3, SPA20N65C3 SPI20N65C3 9 Drain-source on-state resistance 10 Typ. transfer characteristics RDS(on) = f (Tj) ID = f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter : ID = 13.1 A, VGS = 10 V parameter: tp = 10 µs 1.1 SPP20N65C3 80 Ω A 25°C 60 0.8 0.7 ID RDS(on) 0.9 50 0.6 40 0.5 150°C 30 0.4 0.3 20 98% 0.2 typ 10 0.1 0 -60 -20 20 60 100 °C 0 0 180 1 2 3 4 5 6 7 Tj 9 V VGS 11 Typ. gate charge 12 Forward characteristics of body diode VGS = f (QGate) parameter: ID = 20.7 A pulsed IF = f (VSD) 16 parameter: Tj , tp = 10 µs 10 2 SPP20N65C3 V SPP20N65C3 A 0,2 VDS max 10 10 1 0,8 VDS max IF VGS 12 8 6 10 0 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 20 40 60 80 100 nC 140 QGate Rev. 3.0 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 7 2007-08-30 SPP20N65C3, SPA20N65C3 SPI20N65C3 13 Typ. switching time 14 Typ. switching time t = f (ID), inductive load, Tj =125°C t = f (RG ), inductive load, Tj=125°C par.: VDS =380V, VGS=0/+13V, RG=3.6Ω par.: VDS =380V, VGS=0/+13V, ID=20.7 A 10 2 10 3 td(off) td(off) ns ns t t 10 2 td(on) td(on) 10 1 tf 10 1 tr tr tf 10 0 0 4 8 12 16 10 0 0 24 A 5 10 15 20 25 30 ID 40 Ω RG 15 Typ. drain current slope 16 Typ. drain source voltage slope di/dt = f(RG ), inductive load, Tj = 125°C dv/dt = f(RG), inductive load, Tj = 125°C par.: VDS =380V, VGS=0/+13V, ID=20.7A par.: VDS =380V, VGS=0/+13V, ID=20.7A 5000 150 A/µs V/ns dv/dt(off) 4000 dv/dt di/dt 3500 3000 100 di/dt(on) 2500 75 2000 50 1500 1000 dv/dt(on) 25 di/dt(off) 500 0 0 Rev. 3.0 5 10 15 20 25 30 40 Ω RG Page 8 0 0 5 10 15 20 25 30 40 Ω RG 2007-08-30 SPP20N65C3, SPA20N65C3 SPI20N65C3 17 Typ. switching losses 18 Typ. switching losses E = f (ID), inductive load, Tj=125°C E = f(RG), inductive load, T j=125°C par.: VDS =380V, VGS=0/+13V, RG=3.6Ω par.: VDS =380V, VGS=0/+13V,ID =11A 0.08 mWs 0.4 *) Eon includes SPD06S60 diode commutation losses mWs 0.06 0.3 0.05 0.25 *) Eon includes SPD06S60 diode commutation losses E E Eoff Eoff 0.04 0.2 Eon* 0.03 0.15 Eon* 0.02 0.1 0.01 0.05 0 0 3 6 9 12 15 0 0 21 A 5 10 15 20 25 30 ID 19 Avalanche SOA 20 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 3.5 A, VDD = 50 V A 40 Ω RG 700 7 mJ 6 5.5 500 4.5 E AS IAR 5 Tj(Start)=25°C 4 400 3.5 300 3 2.5 2 Tj(Start)=125°C 200 1.5 100 1 0.5 0 -3 10 Rev. 3.0 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR 4 Page 9 0 20 40 60 80 100 120 160 °C Tj 2007-08-30 SPP20N65C3, SPA20N65C3 SPI20N65C3 21 Drain-source breakdown voltage 22 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: EAR =1mJ 785 SPP20N65C3 500 W 745 400 725 350 PAR V(BR)DSS V 705 300 685 250 665 200 645 150 625 100 605 50 585 -60 -20 20 60 100 °C 0 4 10 180 10 5 10 Hz Tj f 23 Typ. capacitances 24 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: VGS =0V, f=1 MHz 10 5 14 pF µJ 12 11 Ciss E oss C 10 4 10 3 10 9 8 7 Coss 10 2 6 5 4 10 1 Crss 3 2 1 10 0 0 100 200 300 400 V 600 VDS Rev. 3.0 0 0 100 200 300 400 V 600 VDS Page 10 2007-08-30 6 SPP20N65C3, SPA20N65C3 SPI20N65C3 Definition of diodes switching characteristics Rev. 3.0 Page 11 2007-08-30 SPP20N65C3, SPA20N65C3 SPI20N65C3 PG-TO220-3-1, PG-TO220-3-21 Rev. 3.0 Page 12 2007-08-30 SPP20N65C3, SPA20N65C3 SPI20N65C3 PG-TO220-3-31/3-111 Fully isolated package ( 2500 VAC; 1 minute ) Rev. 3.0 Page 13 2007-08-30 SPP20N65C3, SPA20N65C3 SPI20N65C3 PG-TO262-3-1, PG-TO262-3-21 (I²-PAK) Rev. 3.0 Page 14 2007-08-30 SPP20N65C3, SPA20N65C3 SPI20N65C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 3.0 Page 15 2007-08-30