SPB10N10
SIPMOS Power-Transistor
Product Summary
Feature
N-Channel
Enhancement mode
175°C operating temperature
VDS
100
R DS(on)
170
m
ID
10.3
A
Avalanche rated
V
P-TO263-3-2
dv/dt rated
Type
Package
Ordering Code
Marking
SPB10N10
P-TO263-3-2
Q67042-S4119
10N10
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Value
A
TC=25°C
10.3
TC=100°C
7.8
Pulsed drain current
ID puls
Unit
41.2
TC=25°C
EAS
60
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
50
W
-55... +175
°C
Avalanche energy, single pulse
ID =10.3 A , VDD =25V, RGS =25
Reverse diode dv/dt
mJ
kV/µs
IS =10.3A, VDS =80V, di/dt=200A/µs, Tjmax=175°C
TC=25°C
Operating and storage temperature
Tj , Tstg
IEC climatic category; DIN IEC 68-1
55/175/56
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2005-02-14
SPB10N10
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
RthJC
-
-
3
Thermal resistance, junction - ambient, leaded
RthJA
-
-
62
SMD version, device on PCB:
RthJA
-
-
62
-
-
40
@ min. footprint
@ 6 cm 2 cooling area
F)
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
100
-
-
VGS(th)
2.1
3
4
Static Characteristics
Drain-source breakdown voltage
V
VGS =0V, ID =1mA
Gate threshold voltage, VGS = VDS
ID = 21 µA
Zero gate voltage drain current
µA
IDSS
VDS =100V, VGS=0V, Tj =25°C
-
0.01
1
VDS =100V, VGS=0V, Tj =125°C
-
1
100
IGSS
-
1
100
nA
RDS(on)
-
137
170
m
Gate-source leakage current
VGS =20V, VDS =0V
Drain-source on-state resistance
VGS =10V, ID =7.8A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
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2005-02-14
SPB10N10
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
2.6
5.8
-
S
pF
Dynamic Characteristics
Transconductance
gfs
VDS 2*ID*RDS(on)max ,
ID =7.8A
Input capacitance
Ciss
VGS =0V, VDS=25V,
-
320
426
Output capacitance
Coss
f=1MHz
-
72
96
Reverse transfer capacitance
Crss
-
43
65
Turn-on delay time
td(on)
VDD =50V, VGS =10V,
-
8.2
12
Rise time
tr
ID =10.3A, RG=2.2
-
46
69
Turn-off delay time
td(off)
-
29
44
Fall time
tf
-
23
35
-
2.3
3
-
7.9
11.9
-
14.6
19.4
V(plateau) VDD =80V, ID=10.3A
-
6.4
-
V
IS
-
-
10.3
A
-
-
41.2
ns
Gate Charge Characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDD =80V, ID =10.3A
VDD =80V, ID =10.3A,
nC
VGS =0 to 10V
Gate plateau voltage
Reverse Diode
Inverse diode continuous
TC=25°C
forward current
Inverse diode direct current,
ISM
pulsed
Inverse diode forward voltage
VSD
VGS =0V, IF =10.3A
-
0.93
1.25
V
Reverse recovery time
trr
VR =50V, IF =lS ,
-
57
71
ns
Reverse recovery charge
Qrr
diF /dt=100A/µs
-
134
167
nC
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2005-02-14
SPB10N10
1 Power dissipation
2 Drain current
Ptot = f (TC )
ID = f (TC )
parameter: VGS 10 V
55
SPP10N10
12
A
W
10
45
9
40
8
35
ID
Ptot
SPP10N10
7
30
6
25
5
20
4
15
3
10
2
5
1
0
0
20
40
60
80
0
0
100 120 140 160 °C 190
20
40
60
80
100 120 140 160 °C 190
TC
TC
3 Safe operating area
4 Transient thermal impedance
ID = f ( VDS )
ZthJC = f (tp )
parameter : D = 0 , TC = 25 °C
parameter : D = tp /T
10
10 1
2 SPP10N10
SPP10N10
K/W
tp = 4.9µs
DS
/I
D
A
10 0
DS
(
R
ID
10 1
Z thJC
on
)
=
V
10 µs
10 -1
100 µs
D = 0.50
10
10
-2
0.20
1 ms
0
0.10
0.05
single pulse
10 ms
DC
0.02
10 -3
0.01
10 -1 0
10
10
1
10
2
V
10
3
10 -4 -7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
VDS
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2005-02-14
SPB10N10
5 Typ. output characteristic
6 Typ. drain-source on resistance
ID = f (VDS ); Tj=25°C
RDS(on) = f (ID )
parameter: tp = 80 µs
parameter: VGS
25
400
g
VGS[V]=
ID
A
f
15
e
m
a= 5
b= 5.5
c= 6
d= 6.5
e= 7
f= 8
g= 9
h= 10
RDS(on)
h
a
b
c
e
d
VGS[V]=
f
300
250
g
200
h
10
d
a= 5
b= 5.5
c= 6
d= 6.5
e= 7
f= 8
g= 9
h= 10
150
c
100
5
b
50
a
0
0
2
4
6
8
10
V
0
0
13
5
10
15
20
25
35
A
ID
VDS
7 Typ. transfer characteristics
8 Typ. forward transconductance
ID= f ( VGS ); VDS 2 x ID x RDS(on)max
parameter: tp = 80 µs
gfs = f(ID ); Tj=25°C
parameter: gfs
7
12
S
A
5
ID
g fs
8
4
6
3
4
2
2
0
0
1
1
2
3
4
5
0
0
7
V
1
2
3
4
5
6
7
8
A
10
ID
VGS
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SPB10N10
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
RDS(on) = f (Tj )
VGS(th) = f (Tj)
parameter : ID = 7.8 A, VGS = 10 V
parameter: VGS = VDS
SPP10N10
4
750
m
V
ID =1mA
550
VGS(th)
RDS(on)
600
500
450
3
400
350
2.5
300
250
98%
200
typ
150
2
ID =21µA
100
50
0
-60
-20
20
60
100
140
°C
1.5
-65
200
-35
-5
25
55
85
115
Tj
°C
175
Tj
11 Typ. capacitances
12 Forward character. of reverse diode
C = f (VDS)
IF = f (VSD )
parameter: VGS =0V, f=1 MHz
parameter: Tj , tp = 80 µs
10
3
10 2
SPP10N10
A
pF
Ciss
C
IF
10 1
10 2
Coss
10 0
Crss
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)
10 1
0
5
10
15
20
25
30
V
40
10 -1
0
0.4
0.8
1.2
1.6
2
2.4 V
3
VSD
VDS
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2005-02-14
SPB10N10
13 Typ. avalanche energy
14 Typ. gate charge
EAS = f (Tj )
VGS = f (QGate )
par.: ID = 10.3 A , VDD = 25 V, RGS = 25
parameter: ID = 10.3 A pulsed
60
16
SPP10N10
mJ
V
50
12
VGS
EAS
45
40
0,2 VDS max
10
0,8 VDS max
35
30
8
25
6
20
15
4
10
2
5
0
25
45
65
85
105
125
145
°C
185
0
0
4
8
12
16
nC
24
QGate
Tj
15 Drain-source breakdown voltage
V(BR)DSS = f (Tj )
SPP10N10
120
V (BR)DSS
V
114
112
110
108
106
104
102
100
98
96
94
92
90
-60
-20
20
60
100
140
°C
200
Tj
Page 7
2005-02-14
SPB10N10
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
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2005-02-14