Preliminary Data Sheet
TDA21101
High speed Driver with bootstrapping for
dual Power MOSFETs
P-DSO-8
Features
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Fast rise and fall times for frequencies up to 2 MHz
Capable of sinking and sourcing of more than 4 A peak current for lowest
switching losses
Charges High Side (internally clamped to 10 V) and Low Side MOSFET´s gates
up to 12 V for lowest on-losses
Adjustable High Side MOSFET gate drive voltage via high impedance PVCC pin
for optimizing ON losses, gate drive losses, and switching losses
Integrates the bootstrap diode for reducing the part count
Prevents from cross-conducting by adaptive gate drive control
Protects the driver against over-temperature
Supports shut-down mode for very low quiescent current through three-state input
Compatible to standard PWM controller ICs
Floating High Side MOSFET drive up to 30 V
Operates with V PVCC = 5 to 12 V ± 10 % à requires no separate supply voltage
1:1 compatible to HIP6601A and HIP6601B
Ideal for multi-phase Desktop CPU supplies on motherboards and VRM´s and
Notebook CPU supplies
Type
TDA21101
Package
P-DSO-8
Marking
21101G
Ordering Code
Q67042-S4170-A101
Number Name
1
GATE HS
Pinout
Top View
GATEHS 1
8
PHASE
BOOT
2
7
PVCC
PWM
3
6
VCC
GND
4
5
GATELS
2
BOOT
3
4
5
PWM
GND
GATE LS
6
7
VCC
PVCC
8
PHASE
Page 1
Description
Gate drive output for the N-Channel
High side MOSFET
Floating bootstrap pin. To be
connected to the external bootstrap
capacitor to generate the gate drive
voltage for the high side N-Channel
MOSFET
Input for the PWM controller signal
Ground
Gate drive output for the N-Channel
Low Side MOSFET
Supply voltage
High impedance input to adjust the
High Side gate drive
This pin connects to the junction of
the High Side and the Low Side
MOSFET
2002-03-28
Preliminary Data Sheet
TDA21101
General Description
The dual high speed driver is designed to drive a wide range of N-Channel low side
and N-Channel high side MOSFETs with varying gate charges. It has a small
propagation delay from input to output, short rise and fall times and the same pin
configuration to be compatible to HIP6601. In addition it provides several protection
features as well as a shut down mode for efficiency reasons. The high breakdown
voltage makes it suitable for mobile applications.
Target application
The dual high speed driver is designed to work well in half-bridge type circuits where
dual N-Channel MOSFETs are utilized. A circuit designer can fully take advantage of
the driver´s capabilities in high-efficiency, high-density synchronous DC/DC
converters that operate at high switching frequencies, e.g. in multi-phase converters
for CPU supplies on motherboards and VRM´s but also in motor drive and class-D
amplifier type applications.
Absolute Maximum Ratings
At Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Min. Max.
Voltage supplied to ‘VCC’ pin
Voltage supplied to ‘PVCC’ pin
Voltage supplied to ‘PWM’ pin
Voltage supplied to ‘BOOT’ pin referenced to ‘PHASE’
(clamped by the TDA21101 to 10 V when PVCC > 10 V)
Voltage rating at ‘PHASE’ pin, DC
Junction temperature
Storage temperature
ESD Rating; Human Body Model
IEC climatic category; DIN EN 60068-1
VVCC
VPVCC
VPWM
VBOOT –
VPHASE
VPHASE
TJ
TS
-0.3
-0.3
-0.3
-0.3
20
20
6.5
10
30
150
-55 150
4
55/150/56
V
-15
°C
kV
-
Thermal Characteristic
Parameter
Symbol
Thermal resistance, junction-soldering point
Thermal resistance, junction-ambient
Page 2
Values
Unit
Min. Typ. Max.
90
K/W
125
2002-03-28
Preliminary Data Sheet
TDA21101
Electrical Characteristic
At Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Supply Characteristic
Bias supply current
IVCC
Quiescent current
Power supply current
IVCCQ
IPVCC
f = 250 kHz,
VPVCC = V VCC = 12 V
1.8 V ≤ V PWM ≤ 3.0 V
0.1 ≤ f ≤ 2 MHz,
5 V ≤ V PVCC ≤ 12 V
VVCC rising threshold
VVCC falling threshold
Values
Unit
Min. Typ. Max.
9.0
12
mA
500
mA
nA
4.5
-500
Under-voltage lockout
9.0
9.5
10
V
Under-voltage lockout
8.15 8.8 9.15
V
Input Characteristic
Current in ‘PWM’ pin
IPWM_L
V_PWM = 0.4 V
-120
µA
Current in ‘PWM’ pin
IPWM_H
V_PWM = 4.5 V
180
Shut down window
VIN_SHUT
t_SHUT > 600 ns
1.8
3.0
V
Shut down hold-off
t_SHUT
320
450
600
ns
1.8 V ≤ V PWM ≤ 3.0 V
time
PWM pin open *
VPWM_O
1.8
2.0
2.2
PWM Low level
VPWM_L
1.2
2.5
threshold
V
PWM High level
VPWM_H
2.5
3.9
threshold
* The driver IC will shut down and the High side MOSFET and the Low side MOSFET will be turnedoff when the PWM input is open (e.g. PWM input disconnected or the PWM IC in a high-Z state)
At Tj = 25 °C, unless otherwise specified
Dynamic Characteristic
Turn-on propagation
td(ON)_HS
Delay High Side
Turn-off propagation td(OFF)_HS
delay High Side
Rise time High Side
tr_HS
Fall time High Side
tf_HS
Turn-on propagation
td(ON)_LS
Delay Low Side
Turn-off propagation
td(OFF)_LS
delay Low Side
Rise time Low Side
tr_LS
Fall time Low Side
tf_LS
Turn-on propagation
td(ON)_HS
Delay High Side
Turn-off propagation td(OFF)_HS
delay High Side
Rise time High Side
tr_HS
Fall time High Side
tf_HS
Turn-on propagation
td(ON)_LS
Delay Low Side
PPVCC = V VCC= 12 V
CISS = 3000 pF
58
70
40
50
18
18
40
34
30
60
30
40
19
17
80
32
25
ns
60
PPVCC = V VCC= 12 V
CISS = 3000 pF
TJ = 125 °C
Page 3
18
21
50
ns
2002-03-28
Preliminary Data Sheet
Turn-off propagation
delay Low Side
Rise time Low Side
Fall time Low Side
TDA21101
td(OFF)_LS
43
tr_LS
tf_LS
21
20
Operating Conditions
At Tj = 25 °C, unless otherwise specified
Parameter
Voltage supplied to
‘VCC’ pins
Voltage supplied to
‘PVCC’ pins
Input signal transition
frequency
Power dissipation
Thermal shut down
Junction temperature
Symbol
Conditions
Values
Unit
Min. Typ. Max.
VVCC
10.8
13.2
V
VPVCC
5
13.2
V
f
0.1
2
MHz
165
125
W
°C
°C
PTOT
TOT
TJ
TA = 25 °C, TJ = 125 °C
(Hysteresis = 50 °C)
135
-25
0.8
150°
At Tj = 25 °C, unless otherwise specified
Parameter
Conditions
Values
Unit
Min. Typ. Max.
Output Characteristic High Side (HS) and Low Side (LS), ensured by design
Output
HS; Source *
PPVCC = V VCC= 12 V
2.15
V
Resistance and
I_HS_SRC = 2 A
Voltage drop
HS; Sink
VVCC= 12 V, P PVCC = 5 V
1.2
1.9
Ω
resp.
HS; Sink
PPVCC = V VCC= 12 V
0.95 1.5
LS; Source *
PPVCC = V VCC= 12 V
2.15
V
I_HS_SRC = 2 A
LS; Sink
PPVCC = V VCC= 12 V
0.7
1.0
Ω
HS; Source *
PPVCC = V VCC= 12 V
1.65
V
I_HS_SRC = 2 A, TJ = 125 °C
Output
HS; Sink
VVCC= 12 V, P PVCC = 5 V
1.9
Resistance and
TJ = 125 °C
Ω
Voltage drop
HS; Sink
PPVCC = V VCC= 12 V
1.5
resp. (@ 125 °C)
TJ = 125 °C
LS; Source *
PPVCC = V VCC= 12 V
1.65
V
I_HS_SRC = 2 A, TJ = 125 °C
LS; Sink
PPVCC = V VCC= 12 V
1.1
Ω
TJ = 125 °C
HS; Source *
PPVCC = V VCC= 12 V
4
Peak outputD
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