2N5551

2N5551- MMBT5551 NPN General Purpose Amplifier April 2006 2N5551- MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base) • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V) tm 2N5551 3 MMBT5551 2 TO-92 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * T Symbol VCEO VCBO VEBO IC TJ, Tstg NOTES: a = 25°C unless otherwise noted Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current - Continuous Junction and Storage Temperature Value 160 180 6.0 600 -55 ~ +150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics T =25°C unless otherwise noted a Symbol PD RθJA RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N5551 625 5.0 83.3 200 357 *MMBT5551 350 2.8 Units mW mW/°C °C/W °C/W * Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06." ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com 2N5551- MMBT5551 Rev. B 2N5551- MMBT5551 NPN General Purpose Amplifier Electrical Characteristics Symbol Off Characteristics V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO hFE Ta = 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage * Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Test Condition IC = 1.0mA, IB = 0 IC = 100µA, IE = 0 IE = 10uA, IC = 0 VCB = 120V, IE = 0 VCB = 120V, IE = 0, Ta = 100°C VEB = 4.0V, IC = 0 IC = 1.0mA, VCE = 5.0V IC = 10mA, VCE = 5.0V IC = 50mA, VCE = 5.0V IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, IB = 1.0mA IC = 50mA, IB = 5.0mA IC = 10mA, VCE = 10V, f = 100MHz VCB = 10V, IE = 0, f = 1.0MHz VBE = 0.5V, IC = 0, f = 1.0MHz IC = 1.0 mA, VCE = 10 V, f = 1.0kHz IC = 250 uA, VCE = 5.0 V, RS=1.0 kΩ, f=10 Hz to 15.7 kHz Min. 160 180 6.0 Max. Units V V V 50 50 50 nA µA nA On Characteristics DC Current Gain 80 80 30 250 0.15 0.20 1.0 1.0 V V V V VCE(sat) VBE(sat) Collector-Emitter Saturation Voltage Base-Emitter On Voltage Small Signal Characteristics fT Cobo Cibo Hfe NF Current Gain Bandwidth Product Output Capacitance Input Capacitance Small-Signal Current Gain Noise Figure 100 300 6.0 20 50 250 8.0 dB MHz pF pF Spice Model NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10) 2 2N5551- MMBT5551 Rev. B www.fairchildsemi.com 2N5551- MMBT5551 NPN General Purpose Amplifier Typical Performance Characteristics Figure 1. Typical Pulsed Current Gain vs Collector Current hFE - TYPICAL PULSED CURRENT GAIN 250 Figure 2. Collector-Emitter Saturation Voltage vs Collector Current VCESAT - COLLECTOR EMITTER VOLTAGE (V) 0.5 200 125 C o 0.4 β = 10 150 0.3 25 C o 25 C o 100 0.2 -40 C 50 o 125 C o VCE = 5V 0.1 - 40 C 1 10 100 o 0 0.1 0.2 0.5 1 2 5 10 20 50 100 0.0 IC - COLLECTOR CURRENT (mA) IC - COLLECTOR CURRENT (mA) Figure 3. Base-Emitter Saturation Voltage vs Collector Current 1.0 Figure 4. Base-Emitter On Voltage vs Collector Current VBEON - BASE EMITTER ON VOLTAGE (V) 1.0 VBESAT - BASE EMITTER VOLTAGE (V) β = 10 0.8 - 40 C o - 40 C o 0.8 25 C 0.6 o 125 C 0.4 o 0.6 25 C 125 C o o 0.4 0.2 0.2 VCE = 5V 1 10 100 0.0 1 10 100 200 0.0 0.1 IC - COLLECTOR CURRENT (mA) IC - COLLECTOR CURRENT (mA) Figure 5. Collector Cutoff Current vs Ambient Temperature I CBO- COLLE CTOR CURRENT (nA) 50 VCB = 100V Figure 6. Input and Output Capacitance vs Reverse Voltage 30 f = 1.0 MHz 25 CAPACITANCE (pF) 20 10 15 10 C ib C cb 1 10 100 5 1 25 50 75 100 TA - AMBIE NT TEMP ERATURE ( ° C) 12 5 0 0.1 V CE - COLLECTOR VOLTAGE (V) 3 2N5551- MMBT5551 Rev. B www.fairchildsemi.com 2N5551- MMBT5551 NPN General Purpose Amplifier Typical Performance Characteristics (Continued) Figure 7. Collector- Emitter Breakdown Voltage with Resistance Between Emitter-Base BV CER - BREAKDOWN VOLTAGE (V) Figure 8. Small Signal Current Gain vs Collector Current h FE - SMALL SIGNAL CURRENT GAIN Between Emitter-Base 260 vs Collector Current 16 FREG = 20 MHz V CE = 10V I C = 1.0 mA 240 12 220 8 200 180 4 160 0.1 1 10 100 1000 0 1 RESISTANCE (kΩ ) 10 I C - COLLECTOR CURRENT (mA) 50 Figure 9. Power Dissipation vs Ambient Temperature 700 PD - POWER DISSIPATION (mW) 600 500 400 300 200 100 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 SOT-23 TO-92 4 2N5551- MMBT5551 Rev. B www.fairchildsemi.com 2N5551- MMBT5551 NPN General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ 2 E CMOS™ i-Lo™ ImpliedDisconnect™ EnSigna™ IntelliMAX™ FACT™ FACT Quiet Series™ Across the board. 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THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I19 5 2N5551- MMBT5551 Rev. B www.fairchildsemi.com