FJC1963

FJC1963 NPN Epitaxial Silicon Transistor July 2005 FJC1963 NPN Epitaxial Silicon Transistor Audio Power Amplifier Applications • Complement to FJC1308 • High Collector Current • Low Collector-Emitter Saturation Voltage Marking 19 PY 1 63 WW Weekly code Year code hFE grage SOT-89 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) TC = 25°C unless otherwise noted Parameter Value 50 30 6 3 0.5 150 - 55 ~ 150 Units V V V A W °C °C Power Dissipation(TC=25°C) Junction Temperature Storage Temperature Electrical Characteristics T =25°C unless otherwise noted C Symbol BVCBO BVCEO BVEBO ICEO IEBO hFE VCE(sat) VBE(sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Test Condition IC = 50µA, IE = 0 IC = 1mA, IB = 0 IE = 50µA, IC = 0 VCE = 40V, VB = 0 VEB = 5V, IC = 0 VCE = 2V, IC = 0.5A IC = 1.5, IB = 0.15A IC = 1.5, IB = 0.15A Min. 50 30 6 Max. Units V V V 0.5 0.5 120 560 0.45 1.2 µA µA V V ©2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJC1963 Rev. B1 FJC1963 NPN Epitaxial Silicon Transistor hFE Classification Classification hFE Q 120 ~ 270 R 180 ~ 390 S 280 ~ 560 Package Marking and Ordering Information Device Marking 1963 Device FJC1963 Package SOT-89 Reel Size 13” Tape Width -- Quantity 4,000 FJC1963 Rev. B1 2 www.fairchildsemi.com FJC1963 NPN Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. Static Characteristic 1400 Figure 2. DC Current Gain IB = 7mA 1000 IC [mA], COLLECTOR CURRENT 1200 VCE = 2V IB = 6mA 1000 IB = 5mA 800 hFE, DC CURRENT GAIN Ta = 125 C o o IB = 4mA IB = 3mA IB = 2mA Ta = 25 C 100 600 Ta = - 40 C o 400 200 IB = 1mA 0 0 2 4 6 8 10 12 14 10 10m 100m 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage 10 Figure 4. Base-Emitter Saturation Voltage 10 VCE(sat) [V], SATURATION VOLTAGE 1 Ta = 125 C 100m o VBE(sat) [V], SATURATION VOLTAGE IC = 10IB IC = 10IB 1 Ta = - 40 C Ta = 25 C Ta = 125 C o o o Ta = 25 C 10m o Ta = - 40 C o 1m 10m 100m 1 10 100m 10m 100m 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 5. Base-Emitter On Voltage 1.8 1.6 Figure 6. Power Derating 0.7 VCE = 2V PC [W], COLLECTOR POWER DISSIPATION 0.6 IC [A], COLLECTOR CURRENT 1.4 1.2 1.0 0.8 0.6 0.4 0.5 0.4 0.3 0.2 125 C 0.2 0.0 0.0 o 25 C o - 40 C o 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0 25 50 o 75 100 125 150 175 VBE [V], BASE-EMITTER VOLTAGE Ta [ C], AMIBIENT TEMPERATURE FJC1963 Rev. B1 3 www.fairchildsemi.com FJC1963 NPN Epitaxial Silicon Transistor Mechanical Dimensions SOT-89 4.50 ±0.20 1.65 ±0.10 C0.2 (0.50) 1.50 ±0.20 (0.40) ±0.20 2.50 0.50 ±0.10 1.50 TYP 1.50 TYP 0.40 ±0.10 0.40 +0.10 –0.05 (1.10) 4.10 ±0.20 Dimensions in Millimeters FJC1963 Rev. B1 4 www.fairchildsemi.com FJC1963 NPN Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® UniFET™ VCX™ Wire™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 5 FJC1963 Rev. B1 www.fairchildsemi.com