FJY4002R

FJY4002R PNP Epitaxial Silicon Transistor November 2006 FJY4002R PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJY3002R Eqivalent Circuit C tm C E S52 B E B SOT - 523F Absolute Maximum Ratings * Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Ta = 25°C unless otherwise noted Parameter Value -50 -50 -10 -100 -55~150 150 200 Units V V V mA °C °C mW TSTG TJ PC Storage Temperature Range Junction Temperature Collector Power Dissipation, by RθJA * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics* T =25°C unless otherwise noted a Symbol RθJA * Minimum land pad size. Parameter Thermal Resistance, Junction to Ambient Max 600 Units °C/W Electrical Characteristics* Symbol V(BR)CBO V(BR)CEO ICBO hFE VCE(sat) fT Ccb VI(off) VI(on) R1 R1/R2 TC = 25°C unless otherwise noted Parameter Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Collector-Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain - Bandwidth Product Output Capacitance Test Condition IC = -10 uA, IE = 0 IC = -100 uA, IB = 0 VCB = -40 V, IE = 0 VCE = -5 V, IC = -5mA IC = -10 mA, IB = -0.5 mA VCE = -10V, IC = -5 mA VCB = -10 V, IE = 0, f = 1.0 MHz VCE = -5 V, IC = -100uA VCE = -0.3V, IC = -10mA MIN -50 -50 Typ MAX Units V V -0.1 30 -0.3 200 5.5 -0.5 -3 7 0.9 10 1.0 13 1.1 uA V MHz pF V V KΩ Input Off Voltage Input On Voltage Input Resistor Resistor Ratio * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJY4002R Rev. A FJY4002R PNP Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. DC current Gain 1000 Figure 2. Input On Voltage -100 VCE = - 5V R1 = 10 K R2 = 10 K VCE = - 0.3V R1 = 10 K R2 = 10 K VI(on)[V], INPUT VOLTAGE -1 -10 -100 -1000 hFE, DC CURRENT GAIN -10 100 -1 10 -0.1 -0.1 -1 -10 -100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. Input off Voltage Figure 4. Power Derating 280 IC [µA], COLLECTOR CURRENT -1000 PC[mW], POWER DISSIPATION VCE = - 5V R1 = 10 K R2 = 10 K 240 200 160 -100 120 80 40 -10 -0.0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 0 25 50 o 75 100 125 150 175 VI(off)[V], INPUT OFF VOLTAGE Ta[ C], AMBIENT TEMPERATURE 2 FJY4002R Rev. A www.fairchildsemi.com FJY4002R PNP Epitaxial Silicon Transistor Package Dimensions SOT-523F Dimensions in Millimeters 3 FJY4002R Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I22