G27N120BN

HGTG27N120BN / HGT5A27N120BN Data Sheet October 2004 72A, 1200V, NPT Series N-Channel IGBT The HGTG27N120BN and HGT5A27N120BN are NonPunch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly Developmental Type TA49280. Features • 72A, 1200V, TC = 25oC • 1200V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss • Thermal Impedance SPICE Model Temperature Compensating SABER™ Model www.fairchildsemi.com • Avalanche Rated Packaging JEDEC STYLE TO-247 E C G Ordering Information PART NUMBER HGTG27N120BN HGT5A27N120BN PACKAGE TO-247 TO-247-ST BRAND G27N120BN 27N120BN COLLECTOR (BOTTOM SIDE METAL) NOTE: When ordering, use the entire part number. Symbol C JEDEC STYLE TO-247-ST G COLLECTOR (BOTTOM SIDE METAL) E C G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 ©2004 Fairchild Semiconductor Corporation HGTG27N120BN / HGT5A27N12BN Rev. C2 HGTG27N120BN / HGT5A27N120BN Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG27N120BN Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Forward Voltage Avalanche Energy (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 3) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 3) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 72 34 216 ±20 ±30 150A at 1200V 500 4.0 135 -55 to 150 260 8 15 W W/oC mJ oC oC UNITS V A A A V V 1200 µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by Max junction temperature. 2. ICE = 30A, L = 400µH, TJ = 125oC 3. VCE(PK) = 960V, TJ = 125oC, RG = 3Ω. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250µA, VGE = 0V IC = 10mA, VGE = 0V VCE = 1200V TC = 25oC TC = 125oC TC = 150oC TC = 25oC TC = 150oC MIN 1200 15 6 150 TYP 300 2.45 3.8 6.6 9.2 270 350 24 20 195 80 2.2 2.7 2.3 MAX 250 4 2.7 4.2 ±250 325 420 30 25 240 120 3.3 2.8 UNITS V V µA µA mA V V V nA A V nC nC ns ns ns ns mJ mJ mJ Collector to Emitter Breakdown Voltage Emitter to Collector Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage VCE(SAT) VGE(TH) IGES SSOA VGEP QG(ON) td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF IC = 27A, VGE = 15V VGE = ±20V Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge IC = 250µA, VCE = VGE TJ = 150oC, RG = 3Ω, VGE = 15V, L = 200µH, VCE(PK) = 1200V IC = IC110 , VCE = 0.5 BVCES IC = 27A, VCE = 600V VGE = 15V VGE = 20V Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4) IGBT and Diode at TJ = 25oC, ICE = 27A, VCE = 960V, VGE = 15V, RG = 3Ω, L = 1mH, Test Circuit (Figure 18) ©2004 Fairchild Semiconductor Corporation HGTG27N120BN / HGT5A27N12BN Rev. C2 HGTG27N120BN / HGT5A27N120BN Electrical Specifications PARAMETER Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-On Energy (Note 5) Turn-On Energy (Note 5) Turn-Off Energy (Note 4) Thermal Resistance Junction To Case NOTES: 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. 5. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 18. TC = 25oC, Unless Otherwise Specified (Continued) SYMBOL td(ON)I trI td(OFF)I tfI EON1 EON2 EOFF RθJC TEST CONDITIONS IGBT and Diode at TJ = 150oC, ICE = 27A, VCE = 960V, VGE = 15V, RG = 3Ω, L = 1mH, Test Circuit (Figure 18) MIN TYP 22 20 220 140 2.7 5.1 3.4 MAX 28 25 280 200 6.5 4.2 0.25 UNITS ns ns ns ns mJ mJ mJ oC/W Typical Performance Curves 80 ICE , DC COLLECTOR CURRENT (A) Unless Otherwise Specified ICE, COLLECTOR TO EMITTER CURRENT (A) 200 TJ = 150oC, RG = 3Ω, VGE = 15V, L = 200µH 160 VGE = 15V 70 60 50 40 30 20 10 0 25 50 75 100 125 150 120 80 40 0 0 200 400 600 800 1000 1200 1400 TC , CASE TEMPERATURE (oC) VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE TJ = 150oC, RG = 3Ω, L = 1mH, V CE = 960V TC 100 50 75oC 75oC VGE 15V 12V FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX, OPERATING FREQUENCY (kHz) VCE = 960V, RG = 3Ω, TJ = 125oC ISC 400 40 30 300 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.25oC/W, SEE NOTES 1 5 10 20 ICE, COLLECTOR TO EMITTER CURRENT (A) 60 20 tSC 10 200 TC 110oC 110oC VGE 15V 12V 100 0 11 12 13 14 15 0 16 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ©2004 Fairchild Semiconductor Corporation HGTG27N120BN / HGT5A27N12BN Rev. C2 ISC, PEAK SHORT CIRCUIT CURRENT (A) 50 500 HGTG27N120BN / HGT5A27N120BN Typical Performance Curves ICE, COLLECTOR TO EMITTER CURRENT (A) 140 120 100 TC = -55oC 80 60 40 20 0 TC = 25oC DUTY CYCLE