1N4151

Data Sheet 500 mW EPITAXIAL PLANAR DIODES Mechanical Dimensions JEDEC D0-35 .120 .200 1.00 Min. Description .060 .090 .018 .022 Features n PLANAR PROCESS n 500 mW POWER DISSIPATION n INDUSTRY STANDARD DO-35 PACKAGE n MEETS UL SPECIFICATION 94V-0 1N4151 Maximum Ratings Peak Reverse Voltage...VRM RMS Reverse Voltage...VR(rms) Average Forward Rectified Current...IO Non-Repetitive Peak Forward Surge Current...IFSM Power Dissipation...PD Operating & Storage Temperature Range...TJ, TSTRG Electrical Characteristics Maximum Forward Voltage...VF @ IF = 50 mA Maximum DC Reverse Current...IR Maximum Frequency...f Maximum Diode Capacitance...CD Maximum Reverse Recovery Time...tRR .01 uF PVV = 100nS 5K Ohms 50 Ohms RG = 50 Ohms @ VR = 50v IN4151 75 50 Units Volts Volts ............................................. 215 ............................................... mAmps ............................................. 500 ............................................... mAmps ............................................. 500 ............................................... ......................................... -65 to 150 ......................................... ............................................. 1.0 ............................................... mW °C Volts ............................................. 5 0 ............................................... nAmps ............................................. 100 ............................................... ............................................. 2.0 ............................................... ............................................. 2.0 ............................................... MHz pF ns Test Device Under Test IF IR Output Trr 0.1 IR Page 8-5 1N4151