FMA3051-000

FMA3051 12.5-15.5 GHZ MMIC HIGH POWER AMPLIFIER FEATURES • • • • • • 35 dB Gain 30 dBm P1dB Output Power at 6 V, 1.2 A 40 dBm OIP3 pHEMT Technology On-chip output power detector 5 x 3 sq. mm die Pilot Datasheet v2.1 FUNCTIONAL SCHEMATIC D1 D2 D3 D4 RF IN G2 G3 G4 D1 D2 D3 D4 RF OUT GENERAL DESCRIPTION The FMA3051 is a high performance 12.5-15.5 GHz Gallium Arsenide monolithic amplifier. It is suitable for use in point-tomultipoint communications, sat-com and electronic warfare applications. The die is fabricated using the Filtronic 0.25 µm process. The balanced design offers high output power with low return losses. Power detection is achieved with an on-chip coupled detector associated with diode reference voltage. The circuit is DC blocked at both the RF input and the RF output. G2 G3 G4 DET TYPICAL APPLICATIONS • • • • Point-to-point radio Point-to-multipoint radio Sat-com Electronic Warfare ELECTRICAL SPECIFICATIONS PARAMETER Small Signal Gain Input Return Loss Output Return Loss Output Power at 1dB compression point Output IP3 Drain Current Typical gate voltage Note: TAMBIENT = +25°C, Z0 = 50Ω Performance for on-wafer measurements CONDITIONS 12.5-15.5 GHz, Vd = 6 V, 1200 mA 12.5-15.5 GHz, Vd = 6 V, 1200 mA 12.5-15.5 GHz, Vd = 6 V, 1200 mA 12.5-15.5 GHz, Vd = 6 V, 1200 mA MIN 32 TYP 35 -12 -15 MAX 36 -10 -12 35 UNITS dB dB dB dBm 30 33 12.5-15.5 GHz, Vd = 6 V, 1200 mA 6.0 V 800 -0.5 40 1100 -0.4 1400 -0.3 dBm mA V 1 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3051 Pilot Datasheet v2.1 ABSOLUTE MAXIMUM RATINGS: PARAMETER Max Input Power Drain Voltage Operating Temp Storage Temp SYMBOL Pin VDD Toper Tstor ABSOLUTE MAXIMUM +20dBm +10V -40°C to +85°C -55°C to +150°C PAD REF A B C D E F G H Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device. PAD NAME IN S1B D1B D2B S2B G2B G3B G4B S3B D3B B S4B D4B B OUT DET Q1 S5 D4B A S4A D3B A S3A G4A G3A G2A S2A D2A D1A S1A DESCRIPTION RF in GND Vd1 bias south Vd2 bias south GND Vg2 bias south Vg3 bias south Vg4 bias south GND Vd3 bias south GND Vd4 bias south RF out Detected power voltage Reference voltage for diode detector GND Vd4 bias north GND Vd3 bias north GND Vg4 bias north Vg3 bias north Vg2 bias north GND Vd2 bias north Vd1 bias north GND I J K L PAD LAYOUT: AA Z Y X W V U T SR Q P ON M N O P Q A B C DE F GH I JK L M R S T U V W X Y Z AA DIE SIZE (μm) 5100 x 3000 DIE THICKNESS (μm) 100 MIN. BOND PAD PITCH (μm) 150 MIN. BOND PAD OPENING (μm x μm ) 92 x 92 2 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3051 Pilot Datasheet v2.1 TYPICAL PERFORMANCE FOR ON-WAFER MEASUREMENTS: Note: Measurement Conditions ID = 1100 mA, VDD = 6V, TAMBIENT = 25°C. Gain 200 Sample size per wafer Output power at 1dB compression point 180 160 140 120 100 80 60 40 20 0 12.7 GHz 14 GHz 15.35 GHz 40 35 S21 (dB) 30 25 20 15 10 5 0 12 13 14 Frequency (GHz) 15 16 28 29 30 31 32 33 34 35 Output P1dB (dBm) Input return loss 0 -5 S11 (dB) S22 (dB) 0 -5 -10 -15 -20 -25 -30 Output return loss -10 -15 -20 -25 -30 12 13 14 Frequency (GHz) 15 16 12 13 14 Frequency (GHz) 15 16 3 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3051 Pilot Datasheet v2.1 BIASING CIRCUIT SCHEMATIC: North and South are biased separately, only one side is represented. Please refer to the Assembly diagram below for surface mount components locations. D3 Bond Vdd Bond C1 C2 Vdd Vg Bond C1 C2 Bond Bond Bond C1 Vdd D1 D2 D4 C2 G2 G3 G4 Bond C2 Bond C3 L1 C1 4.5 V R1 DET PAD N R2 Detected voltage Q1 PAD O Reference voltage R1 R2 4.5 V REFERENCE C1 C2 C3 L1 Bond R1 R2 COMPONENT DESCRIPTION Capacitor, 100 nF, surface mount 0402 Capacitor, 100 pF, single layer, to epoxy in cavity Capacitor, 10 nF, surface mount 0402 Inductor, 10 nH, surface mount 0402 Bondwire Resistor, 1 kΩ, surface mount 0402 Resistor, 1.5 kΩ, surface mount 0402 QUANTITY 8 8 2 2 – 2 2 4 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3051 Pilot Datasheet v2.1 ASSEMBLY DIAGRAM It is recommended that the RF connections be made using bond wires with 25µm diameter and a maximum length of 300µm. C2 C2 C2 C2 AA Z YX W V U T S R Q P ON A B C D E F GH I J K L M C2 C2 C2 C2 5 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com FMA3051 Pilot Datasheet v2.1 PREFERRED ASSEMBLY INSTRUCTIONS: GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The recommended die attach is gold/tin eutectic solder under a nitrogen atmosphere. Stage temperature should be 280-290°C; maximum time at temperature is one minute. The recommended wire bond method is thermo-compression wedge bonding with 0.7 or 1.0 mil (0.018 or 0.025 mm) gold wire. Stage temperature should be 250-260°C. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. ORDERING INFORMATION: PART NUMBER FMA3051-000 DESCRIPTION Die in Waffle-pack (Gel-pak available on request) HANDLING PRECAUTIONS: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0-250 V) as defined in JEDEC Standard No. 22-A114. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. APPLICATION NOTES & DESIGN DATA: Application Notes and design data including Sparameters are available on request. DISCLAIMERS: This product is not designed for use in any space based or life sustaining/supporting equipment. 6 Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com Tel: +44 (0) 1325 301111 Website: www.filtronic.com