FMS2018

Advanced Product Information 1.2 FMS2018 SP7T GaAs Multi-Band GSM – UMTS Antenna Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Available in die form Suitable for multi-band GSM/DCS/PCS/ EDGE and UMTS applications Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS power levels Very high Tx-Rx isolation >35dB typ. at 1.8GHz Very high Tx-Tx isolation >30dB typ. at 1.8GHz Very low Tx Insertion loss Very low control current RX1 Functional Schematic RX2 RX3 RX4 TX2 VTX2 TX1 VTX1 TX3 VTX3 VRX1 VRX2 VRX3 VRX4 ANT ANT VRXC Description and Applications: The FMS2018 is a low loss, high power and linear single pole seven throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5µm switch process technology which offers leading edge performance optimised for switch applications. The FMS2018 is designed for use in dual/tri and quad-band GSM handset antenna switch modules and RF front-end modules. Electrical Specifications: Parameter Tx Insertion Loss (TAMBIENT = 25°C,Vcontrol = 0V/2.5V, ZIN = ZOUT = 50Ω) Test Conditions 0.5 – 1.0 GHz 1.0 – 2.0 GHz Min Typ 0.5 0.6 0.6 0.8 20 40 35 33 30 -75 -75 -75 -75 < 0.3 < 1.0 Max Units dB dB dB dB dB dB dB dB dB dBc dBc dBc dBc µs µs Rx Insertion Loss 0.5 – 1.0 GHz 1.0 – 2.0 GHz Return Loss Isolation TX-RX Isolation TX-TX 2nd Harmonic Level 0.5 – 2.5 GHz 0.5 – 1.0 GHz 1.0 – 2.0 GHz 0.5 – 1.0 GHz 1.0 – 2.0 GHz 1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 GHz, Pin = +33 dBm, 100% Duty Cycle 3rd Harmonic Level 1 GHz, Pin = +35 dBm, 100% Duty Cycle 2 GHz, Pin = +33 dBm, 100% Duty Cycle Switching speed : Trise, Tfall Ton, Toff 10% to 90% RF and 90% to 10% RF 50% control to 90% RF and 50% control to 10% RF Note: External DC blocking capacitors are required on all RF ports (typ: 100pF) 1 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com Advanced Product Information 1.2 Truth Table: VTx1 High Low Low Low Low Low Low FMS2018 VTx2 Low High Low Low Low Low Low VTx3 Low Low High Low Low Low Low VRx1 Low Low Low High Low Low Low VRx2 Low Low Low Low High Low Low VRx3 Low Low Low Low Low High Low VRx4 Low Low Low Low Low Low High VM Low Low Low High High High High ON PATH ANT-TX1 ANT-TX2 ANT-TX3 ANT-RX1 ANT-RX2 ANT-RX3 ANT-RX4 Note: ‘High’ ‘Low’ = +2.5V to +5V = 0V to +0.2V Pad Pad and Die Layout: D A H A B C Pad Name ANT Tx1 Tx2 Tx3 Rx1 Rx2 Rx3 Rx4 VTX1 VTX2 VTX3 VRX1 V RX2 V RX3 V RX4 VRXC Description Pin Coordinates (µm) 698, 1167 183, 110 182, 498 184, 1147 1066, 536 1063, 663 1063, 993 1066, 1126 693, 102 798, 102 903, 102 995, 633 1066, 326 1066, 427 1008, 102 1113, 102 Antenna TX1 RF Output TX2 RF Output TX3 RF Output RX1 RF Output RX2 RF Output RX3 RF Output RX4 RF Output TX1 Control Voltage TX2 Control Voltage TX3 Control Voltage RX1 Control Voltage RX2 Control Voltage RX3 Control Voltage RX4 Control Voltage Common Receive Switch Control Voltage G S R T F D E F G H I E C M Q L N B I J K O P J K L M N O P Q R GND T1 GND T2 GND T3 GND Rc Ground 1 Ground 2 Ground 3 Ground 4 178, 392 184, 764 184, 877 1066, 771 Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the bond pad opening Die Size (µm) 1230 x 1250 S T Die Thickness (µm) 100 Min. Bond Pad Pitch(µm) 88 Min. Bond pad opening (µm) 70 x 70 2 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com Advanced Product Information 1.2 FMS2018 Simulated Performance: TX ON 3 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com Advanced Product Information 1.2 FMS2018 RX ON 4 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com Advanced Product Information 1.2 Preferred Assembly Instructions: FMS2018 GaAs devices are fragile and should be handled with great care. Specially designed collets should be used where possible. The back of the die is not metallised and the recommended mounting method is by the use of conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with dry nitrogen. This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is recommended that 25.4µm diameter gold wire is used. Thermosonic ball bonding is preferred. A nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective results for 25um wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique, stage temperature should not be raised above 200°C and bond force should not be raised above 60g. Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve good wire bonds. Bonds should be made from the die first and then to the mounting substrate or package. The physical length of the bondwires should be minimised especially when making RF or ground connections. Handling Precautions: To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No. 22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263. Disclaimers: This product is not designed for use in any space based or life sustaining/supporting equipment. 5 Preliminary specifications subject to change without notice Filtronic Compound Semiconductors Ltd Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: sales@filcs.com Contact Details (USA): Tel: +1 (408) 850 5790 Fax: +1 (408) 850 5766 Email: sales@filss.com Website: www.filcs.com