MMG3014NT1_08

Freescale Semiconductor Technical Data Document Number: MMG3014NT1 Rev. 1, 9/2008 Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3014NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 40 to 4000 MHz such as Cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small - signal RF. Features • Frequency: 40 - 4000 MHz • P1dB: 25 dBm @ 900 MHz • Small - Signal Gain: 19.5 dB @ 900 MHz • Third Order Output Intercept Point: 40.5 dBm @ 900 MHz • Single 5 Volt Supply • Active Bias • Low Cost SOT - 89 Surface Mount Package • RoHS Compliant • In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel. MMG3014NT1 40 - 4000 MHz, 19.5 dB 25 dBm InGaP HBT 12 3 CASE 1514 - 02, STYLE 1 SOT - 89 PLASTIC Table 1. Typical Performance (1) Characteristic Small- Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @1dB Compression Third Order Output Intercept Point Symbol Gp IRL ORL P1db IP3 900 MHz 19.5 - 25 - 11 25 40.5 2140 MHz 15 - 12 −13 25.8 40.5 3500 MHz 10 -8 - 19 25 40 Unit dB dB dB dBm dBm Table 2. Maximum Ratings Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature (2) Symbol VCC ICC Pin Tstg TJ Value 6 300 15 - 65 to +150 150 Unit V mA dBm °C °C 2. For reliable operation, the junction temperature should not exceed 150°C. 1. VCC = 5 Vdc, TC = 25°C, 50 ohm system, in Freescale Application Circuits. Table 3. Thermal Characteristics (VCC = 5 Vdc, ICC = 135 mA, TC = 25°C) Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value (3) 27.4 Unit °C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. MMG3014NT1 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (VCC = 5 Vdc, 900 MHz, TC = 25°C, 50 ohm system, in Freescale Application Circuit) Characteristic Small- Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure Supply Current (1) Supply Voltage (1) Symbol Gp IRL ORL P1dB IP3 NF ICC VCC Min 18.5 — — — — — 110 — Typ 19.5 - 25 - 11 25 40.5 5.7 135 5 Max — — — — — — 160 — Unit dB dB dB dBm dBm dB mA V 1. For reliable operation, the junction temperature should not exceed 150°C. MMG3014NT1 2 RF Device Data Freescale Semiconductor Table 5. Functional Pin Description Pin Number 1 2 3 RFin Ground RFout/DC Supply 1 2 3 Pin Function 2 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Conditions/Test Methodology Human Body Model (per JESD 22 - A114) Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit °C MMG3014NT1 RF Device Data Freescale Semiconductor 3 50 OHM TYPICAL CHARACTERISTICS 25 Gp, SMALL−SIGNAL GAIN (dB) 0 20 S11 S11, S22 (dB) 15 TC = −40°C 10 VCC = 5 Vdc 5 0 1 2 f, FREQUENCY (GHz) 3 4 85°C 25°C −5 S22 VCC = 5 Vdc ICC = 135 mA −10 0 1 2 f, FREQUENCY (GHz) 3 4 Figure 2. Small - Signal Gain (S21) versus Frequency 23 21 Gp, SMALL−SIGNAL GAIN (dB) 900 MHz 19 17 15 13 11 9 6 10 3500 MHz 14 18 22 26 1960 MHz 2140 MHz 2600 MHz P1dB, 1 dB COMPRESSION POINT (dBm) VCC = 5 Vdc ICC = 135 mA 26 Figure 3. Input/Output Return Loss versus Frequency 25 VCC = 5 Vdc ICC = 135 mA 24 0.5 1 1.5 2 2.5 3 3.5 f, FREQUENCY (GHz) Pout, OUTPUT POWER (dBm) Figure 4. Small - Signal Gain versus Output Power IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 200 180 ICC, COLLECTOR CURRENT (mA) 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 VCC, COLLECTOR VOLTAGE (V) 42 Figure 5. P1dB versus Frequency 40 VCC = 5 Vdc ICC = 135 mA 1 MHz Tone Spacing 38 0 1 2 f, FREQUENCY (GHz) 3 4 Figure 6. Collector Current versus Collector Voltage Figure 7. Third Order Output Intercept Point versus Frequency MMG3014NT1 4 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 42 IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 42 40 40 f = 900 MHz 1 MHz Tone Spacing 38 4.5 4.7 4.9 5.1 5.3 5.5 VCC = 5 Vdc f = 900 MHz 1 MHz Tone Spacing 38 −40 −20 0 20 40 60 80 100 VCC, COLLECTOR VOLTAGE (V) T, TEMPERATURE (_C) Figure 8. Third Order Output Intercept Point versus Collector Voltage −30 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) −40 MTTF (YEARS) 105 Figure 9. Third Order Output Intercept Point versus Case Temperature −50 104 −60 VCC = 5 Vdc ICC = 135 mA f = 900 MHz 1 MHz Tone Spacing −70 −80 10 13 16 19 22 25 Pout, OUTPUT POWER (dBm) 103 120 125 130 135 140 145 150 TJ, JUNCTION TEMPERATURE (°C) NOTE: The MTTF is calculated with VCC = 5 Vdc, ICC = 135 mA Figure 10. Third Order Intermodulation versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) Figure 11. MTTF versus Junction Temperature −20 VCC = 5 Vdc, ICC = 135 mA, f = 2140 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF 10 8 NF, NOISE FIGURE (dB) −30 6 −40 4 −50 2 0 0 1 2 f, FREQUENCY (GHz) 3 VCC = 5 Vdc ICC = 135 mA 4 −60 −70 10 13 16 19 22 25 Pout, OUTPUT POWER (dBm) Figure 12. Noise Figure versus Frequency Figure 13. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power MMG3014NT1 RF Device Data Freescale Semiconductor 5 50 OHM APPLICATION CIRCUIT: 800 - 1000 MHz VSUPPLY R1 C3 L1 RF INPUT DUT Z1 Z2 C1 C5 Z1, Z8 Z2, Z7 Z3 Z4 C6 0.274″ x 0.058″ Microstrip 0.073″ x 0.058″ Microstrip 0.066″ x 0.058″ Microstrip 0.509″ x 0.058″ Microstrip Z5 Z6 PCB Z3 Z4 VCC Z5 Z6 C2 C4 RF OUTPUT Z7 Z8 C7 0.172″ x 0.058″ Microstrip 0.403″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 14. 50 Ohm Test Circuit Schematic 30 20 10 S21, S11, S22 (dB) 0 −10 −20 −30 −40 700 S11 VCC = 5 Vdc ICC = 135 mA 900 f, FREQUENCY (MHz) 1000 1100 S22 C5 C1 C6 C4 C3 L1 C2 C7 S21 R1 MMG30XX Rev 2 800 Figure 15. S21, S11 and S22 versus Frequency Figure 16. 50 Ohm Test Circuit Component Layout Table 8. 50 Ohm Test Circuit Component Designations and Values Part C1, C2 C3 C4 C5 C6 C7 L1 R1 Description 220 pF Chip Capacitors 0.1 μF Chip Capacitor 2.2 μF Chip Capacitor 0.2 pF Chip Capacitor 4.7 pF Chip Capacitor 1.8 pF Chip Capacitor 10 nH Chip Inductor 0 Ω Chip Resistor Part Number C0805C221J5GAC C0603C104J5RAC C0805C225J4RAC 12065J0R2BS C0603C479J5GAC C0603C189J5GAC HK160810NJ- T ERJ3GEY0R00V Manufacturer Kemet Kemet Kemet AVX Kemet Kemet Taiyo Yuden Panasonic MMG3014NT1 6 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 1800 - 2200 MHz VSUPPLY R1 C3 L1 RF INPUT DUT Z1 C1 C5 Z1, Z7 Z2 Z3 Z4 0.347″ x 0.058″ Microstrip 0.399″ x 0.058″ Microstrip 0.176″ x 0.058″ Microstrip 0.172″ x 0.058″ Microstrip Z5 Z6 PCB Z2 Z3 VCC C6 Z4 Z5 C4 RF OUTPUT Z6 C2 Z7 0.162″ x 0.058″ Microstrip 0.241″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 17. 50 Ohm Test Circuit Schematic 20 S21 10 S21, S11, S22 (dB) R1 C4 C3 L1 C2 0 C1 C5 −10 VCC = 5 Vdc ICC = 135 mA −20 1600 1800 2000 f, FREQUENCY (MHz) 2200 S11 C6 S22 2400 MMG30XX Rev 2 Figure 18. S21, S11 and S22 versus Frequency Figure 19. 50 Ohm Test Circuit Component Layout Table 9. 50 Ohm Test Circuit Component Designations and Values Part C1, C2 C3 C4 C5 C6 L1 R1 Description 22 pF Chip Capacitors 0.1 μF Chip Capacitor 2.2 μF Chip Capacitor 1.5 pF Chip Capacitor 1.1 pF Chip Capacitor 15 nH Chip Inductor 0 Ω Chip Resistor Part Number C0805C220J5GAC C0603C104J5RAC C0805C225J4RAC C0603C159J5RAC C0603C119J5GAC HK160815NJ- T ERJ3GEY0R00V Manufacturer Kemet Kemet Kemet Kemet Kemet Taiyo Yuden Panasonic MMG3014NT1 RF Device Data Freescale Semiconductor 7 50 OHM APPLICATION CIRCUIT: 2300 - 2700 MHz VSUPPLY R1 C3 L1 RF INPUT DUT Z1 C1 C5 Z1, Z7 Z2 Z3 Z4 0.347″ x 0.058″ Microstrip 0.488″ x 0.058″ Microstrip 0.087″ x 0.058″ Microstrip 0.136″ x 0.058″ Microstrip Z5 Z6 PCB Z2 Z3 VCC C6 Z4 Z5 Z6 C2 C4 RF OUTPUT Z7 0.036″ x 0.058″ Microstrip 0.403″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 20. 50 Ohm Test Circuit Schematic 20 S21 10 S21, S11, S22 (dB) R1 C4 C3 L1 C5 C6 −20 VCC = 5 Vdc ICC = 135 mA −30 2100 2300 2500 f, FREQUENCY (MHz) S22 2700 2900 MMG30XX Rev 2 C2 0 C1 −10 S11 Figure 21. S21, S11 and S22 versus Frequency Figure 22. 50 Ohm Test Circuit Component Layout Table 10. 50 Ohm Test Circuit Component Designations and Values Part C1, C2 C3 C4 C5, C6 L1 R1 Description 22 pF Chip Capacitors 0.1 μF Chip Capacitor 2.2 μF Chip Capacitor 1.1 pF Chip Capacitors 15 nH Chip Inductor 0 Ω Chip Resistor Part Number C0805C220J5GAC C0603C104J5RAC C0805C225J4RAC C0603C119J5GAC HK160815NJ- T ERJ3GEY0R00V Manufacturer Kemet Kemet Kemet Kemet Taiyo Yuden Panasonic MMG3014NT1 8 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 3400 - 3600 MHz VSUPPLY R1 C3 L1 RF INPUT DUT Z1 C1 C5 Z1, Z8 Z2 Z3 Z4, Z5 C6 Z6 Z7 PCB Z2 Z3 Z4 VCC C7 Z5 Z6 Z7 C2 C4 RF OUTPUT Z8 0.347″ x 0.058″ Microstrip 0.068″ x 0.058″ Microstrip 0.419″ x 0.058″ Microstrip 0.088″ x 0.058″ Microstrip 0.084″ x 0.058″ Microstrip 0.403″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 23. 50 Ohm Test Circuit Schematic 20 S21 R1 C4 C3 L1 C6 S22 −20 VCC = 5 Vdc ICC = 135 mA 3450 3500 f, FREQUENCY (MHz) 3550 3600 MMG30XX Rev 2 C7 C2 10 S21, S11, S22 (dB) 0 S11 −10 C1 C5 −30 3400 Figure 24. S21, S11 and S22 versus Frequency Figure 25. 50 Ohm Test Circuit Component Layout Table 11. 50 Ohm Test Circuit Component Designations and Values Part C1 C2 C3 C4 C5 C6 C7 L1 R1 Description 3.3 pF Chip Capacitor 2.0 pF Chip Capacitor 0.1 μF Chip Capacitor 2.2 μF Chip Capacitor 0.6 pF Chip Capacitor 0.9 pF Chip Capacitor 0.8 pF Chip Capacitor 56 nH Chip Inductor 0 Ω Chip Resistor Part Number C0805C339J5GAC C0805C209J5GAC C0603C104J5RAC C0805C225J4RAC 06035J0R6BS 06035J0R9BS 06035J0R8BS HK160856NJ- T ERJ3GEY0R00V Manufacturer Kemet Kemet Kemet Kemet AVX AVX AVX Taiyo Yuden Panasonic MMG3014NT1 RF Device Data Freescale Semiconductor 9 50 OHM TYPICAL CHARACTERISTICS Table 12. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 135 mA, TC = 25°C, 50 Ohm System) f MHz 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 S11 |S11| 0.622 0.618 0.616 0.613 0.611 0.611 0.610 0.610 0.610 0.611 0.615 0.618 0.621 0.625 0.624 0.624 0.624 0.625 0.626 0.628 0.629 0.632 0.634 0.636 0.640 0.643 0.646 0.649 0.653 0.657 0.661 0.665 0.669 0.673 0.677 0.681 0.685 0.689 0.693 0.697 0.701 0.705 0.709 ∠φ 174.6 174.0 173.4 173.0 172.5 172.0 171.4 170.9 170.4 169.9 169.5 171.8 171.4 170.9 170.2 169.6 168.9 168.3 167.6 166.9 166.1 165.4 164.6 163.8 163.0 162.2 161.3 160.5 159.7 158.9 158.0 157.2 156.4 155.5 154.7 153.8 153.0 152.2 151.3 150.5 149.6 148.7 147.8 |S21| 10.280 10.107 9.933 9.760 9.586 9.300 9.009 8.716 8.363 8.064 7.734 7.403 7.073 6.838 6.629 6.422 6.227 6.044 5.866 5.700 5.545 5.393 5.257 5.117 4.988 4.864 4.742 4.630 4.517 4.414 4.312 4.215 4.123 4.033 3.947 3.864 3.783 3.707 3.633 3.562 3.494 3.426 3.363 S21 ∠φ 153.8 148.3 143.1 138.3 133.8 129.8 126.0 122.4 119.2 116.2 113.3 110.9 108.4 106.0 103.7 101.5 99.4 97.3 95.4 93.5 91.7 89.9 88.2 86.5 84.8 83.2 81.7 80.1 78.6 77.1 75.6 74.2 72.7 71.3 69.8 68.4 67.0 65.5 64.1 62.7 61.3 59.8 58.4 |S12| 0.0336 0.0336 0.0337 0.0337 0.0338 0.0338 0.0339 0.0339 0.0340 0.0340 0.0341 0.0342 0.0342 0.0343 0.0343 0.0344 0.0344 0.0346 0.0347 0.0349 0.0351 0.0352 0.0354 0.0355 0.0356 0.0357 0.0359 0.0360 0.0361 0.0362 0.0363 0.0364 0.0364 0.0365 0.0366 0.0367 0.0367 0.0368 0.0369 0.0369 0.0370 0.0371 0.0371 S12 ∠φ 0.6 0.3 - 0.1 - 0.4 - 0.6 - 0.8 - 1.0 - 1.2 - 1.4 - 1.6 - 1.7 - 1.8 - 1.9 - 2.0 - 2.2 - 2.3 - 2.5 - 2.7 - 2.8 - 3.0 - 3.2 - 3.4 - 3.6 - 3.8 - 4.0 - 4.2 - 4.4 - 4.5 - 4.8 - 5.0 - 5.2 - 5.5 - 5.7 - 6.0 - 6.3 - 6.6 - 6.9 - 7.2 - 7.6 - 7.9 - 8.3 - 8.7 - 9.1 |S22| 0.448 0.457 0.465 0.475 0.483 0.490 0.497 0.503 0.508 0.512 0.517 0.526 0.533 0.536 0.536 0.537 0.537 0.538 0.538 0.539 0.540 0.540 0.541 0.543 0.544 0.545 0.547 0.549 0.550 0.552 0.554 0.556 0.557 0.559 0.560 0.562 0.563 0.564 0.564 0.565 0.565 0.565 0.564 S22 ∠φ - 171.6 - 171.9 - 172.5 - 173.3 - 174.0 - 174.9 - 175.8 - 176.8 - 177.9 - 178.9 176.5 175.5 174.5 173.5 172.6 171.8 170.9 169.9 169.1 168.2 167.3 166.5 165.6 164.9 164.1 163.3 162.6 161.8 161.1 160.3 159.6 158.9 158.2 157.4 156.7 156.0 155.2 154.4 153.6 152.8 152.0 151.2 150.3 (continued) MMG3014NT1 10 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS Table 12. Common Emitter S - Parameters (VCC = 5 Vdc, ICC = 135 mA, TC = 25°C, 50 Ohm System) (continued) f MHz 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200 3250 3300 3350 3400 3450 3500 3550 3600 3650 3700 3750 3800 3850 3900 3950 4000 S11 |S11| 0.712 0.715 0.719 0.722 0.724 0.728 0.730 0.733 0.736 0.738 0.740 0.742 0.745 0.747 0.749 0.751 0.753 0.756 0.758 0.760 0.762 0.764 0.766 0.768 0.770 0.772 0.774 0.775 0.777 0.778 0.780 0.781 0.783 ∠φ 146.9 146.0 145.0 144.1 143.1 142.2 141.2 140.2 139.2 138.2 137.2 136.2 135.2 134.2 133.1 132.1 131.1 130.1 129.1 128.1 127.1 126.1 125.1 124.2 123.2 122.3 121.3 120.4 119.5 118.6 117.6 116.7 115.8 |S21| 3.299 3.240 3.181 3.124 3.071 3.017 2.968 2.920 2.872 2.828 2.784 2.743 2.703 2.664 2.627 2.590 2.555 2.521 2.487 2.455 2.422 2.392 2.361 2.331 2.302 2.273 2.246 2.218 2.192 2.167 2.142 2.118 2.091 S21 ∠φ 57.0 55.6 54.1 52.7 51.3 49.9 48.5 47.1 45.8 44.4 43.0 41.7 40.3 39.0 37.6 36.3 35.0 33.7 32.4 31.1 29.8 28.6 27.3 26.1 24.9 23.7 22.6 21.5 20.4 19.2 18.1 17.1 16.0 |S12| 0.0372 0.0373 0.0373 0.0374 0.0374 0.0375 0.0376 0.0377 0.0378 0.0380 0.0381 0.0382 0.0384 0.0385 0.0386 0.0388 0.0389 0.0390 0.0391 0.0393 0.0394 0.0395 0.0396 0.0397 0.0398 0.0399 0.0400 0.0401 0.0403 0.0404 0.0405 0.0406 0.0407 S12 ∠φ - 9.5 - 9.9 - 10.3 - 10.8 - 11.2 - 11.6 - 12.0 - 12.4 - 12.9 - 13.4 - 13.8 - 14.4 - 14.9 - 15.4 - 15.9 - 16.4 - 17.0 - 17.5 - 18.0 - 18.5 - 19.0 - 19.5 - 20.0 - 20.5 - 21.0 - 21.4 - 21.8 - 22.2 - 22.6 - 23.0 - 23.4 - 23.9 - 24.2 |S22| 0.564 0.563 0.562 0.562 0.561 0.560 0.559 0.559 0.558 0.557 0.557 0.557 0.557 0.557 0.557 0.557 0.558 0.558 0.559 0.560 0.560 0.561 0.562 0.563 0.564 0.565 0.566 0.567 0.568 0.569 0.570 0.571 0.572 S22 ∠φ 149.5 148.6 147.7 146.8 145.9 145.0 144.0 143.1 142.1 141.1 140.1 139.1 138.1 137.1 136.1 135.1 134.1 133.2 132.2 131.3 130.5 129.6 128.9 128.1 127.4 126.7 126.1 125.6 125.1 124.6 124.2 123.7 123.5 MMG3014NT1 RF Device Data Freescale Semiconductor 11 1.7 7.62 0.305 diameter 3.48 5.33 1.27 1.27 0.86 0.64 3.86 0.58 2.49 2.54 Recommended Solder Stencil NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH. Figure 26. Recommended Mounting Configuration MMG3014NT1 12 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MMG3014NT1 RF Device Data Freescale Semiconductor 13 MMG3014NT1 14 RF Device Data Freescale Semiconductor MMG3014NT1 RF Device Data Freescale Semiconductor 15 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3100: General Purpose Amplifier Biasing REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 Date Apr. 2008 Sept. 2008 • Initial Release of Data Sheet • Updated Fig. 15, “S21, S11 and S22 versus Frequency”, to correct S11 and S22 curve label transposition error, p. 6 • Updated data in Table 12, “Common Emitter S-Parameters”, for better simulation response, p. 10 and 11 Description MMG3014NT1 16 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. MMG3014NT1 Document Number: RF Device Data MMG3014NT1 Rev. 1, 9/2008 Freescale Semiconductor 17