2MBI600VJ-120-50

http://www.fujisemi.com 2MBI600VJ-120-50 IGBT MODULE (V series) 1200V / 600A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure IGBT Modules Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Symbols VCES VGES Ic Ic pulse Collector current -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg between terminal and copper base (*1) Isolation voltage Viso between thermistor and others (*2) Mounting (*3) Screw torque Terminals (*4) PC-Board (*5) Items Collector-Emitter voltage Gate-Emitter voltage Conditions Continuous 1ms 1ms 1 device Tc=80°C Tc=80°C Maximum ratings 1200 ±20 600 1200 600 1200 3750 175 150 125 -40 to +125 2500 3.5 4.5 0.6 Units V V A W °C VAC Nm Inverter AC : 1min. Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : 2.5-3.5 Nm (M5) Note *4: Recommendable value : 3.5-4.5 Nm (M6) Note *5: Recommendable value : 0.4-0.6 Nm (M2.5) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Symbols ICES IGES VGE (th) VCE (sat) (terminal) Conditions VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 600mA VGE = 15V IC = 600A VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V IC = 600A VGE = ±15V RG = 0.62Ω Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Collector-Emitter saturation voltage VCE (sat) (chip) Inverter Input capacitance Turn-on time Turn-off time Cies ton tr tr (i) toff tf VF (terminal) Forward on voltage VF (chip) Reverse recovery time Thermistor Resistance B value trr R B VGE = 0V IF = 600A IF = 600A T=25°C T=100°C T=25/50°C Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Characteristics min. typ. max. 3.0 600 6.0 6.5 7.0 2.45 2.90 2.80 2.85 1.85 2.30 2.20 2.25 48 550 1200 180 600 120 1050 2000 110 350 2.30 2.75 2.45 2.40 1.70 2.15 1.85 1.80 200 600 5000 465 495 520 3305 3375 3450 Characteristics min. typ. max. 0.04 0.06 0.0167 - Units mA nA V V nF nsec V nsec Ω K Thermal resistance characteristics Items Thermal resistance (1device) Contact thermal resistance (1device) (*6) Symbols Rth(j-c) Rth(c-f) Conditions Inverter IGBT Inverter FWD with Thermal Compound Units °C/W Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 2MBI600VJ-120-50 Characteristics (Representative) [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 1400 1200 Collector current: Ic [A] 1000 800 600 400 200 0 0 1 2 3 4 5 Collector-Emitter voltage: VCE [V] 10V VGE=20V15V Collector current: Ic [A] 12V IGBT Modules http://www.fujisemi.com [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 1400 1200 1000 800 600 400 200 0 0 1 2 3 4 5 Collector-Emitter voltage: VCE [V] 8V 10V VGE= 20V 15V 12V 8V [INVERTER] Collector current vs. Collector-Emitter v oltage (typ.) VGE= 15V / chip 1400 1200 Collector Current: Ic [A] 1000 Tj=25°C 800 600 400 200 0 0 1 2 3 4 5 Collector-Emitter Voltage: VCE [V] Collector-Emitter Voltage: VCE [V] 125°C 150°C [INVERTER] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip 10 8 6 4 Ic=1200A Ic=600A Ic=300A 5 10 15 20 25 2 0 Gate-Emitter Voltage: VGE [V] [INVERTER] Gate Capacitance vs. Collector-Emitter Voltage (typ.) VGE= 0V, ƒ= 1MHz, Tj= 25°C Gate Capacitance: Cies, Coes, Cres [nF] *** Collector-Emitter voltage: VCE [200V/div] Gate-Emitter voltage: VGE [5V/div] 1000 [INVERTER] Dynamic Gate Charge (typ.) Vcc=600V, Ic=600A, Tj= 25°C 100 Cies VCE VGE 10 Cres Coes 1 0 10 20 30 0 1000 2000 3000 4000 5000 6000 Collector-Emitter voltage: VCE [V] Gate charge: Qg [nC] 2 2MBI600VJ-120-50 IGBT Modules http://www.fujisemi.com [INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=0.62Ω, Tj=25°C 10000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] [INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=0.62Ω, Tj=125°C, 150°C 10000 Tj=125oC Tj=150oC 1000 toff ton tr 100 tf 1000 toff ton tr 100 tf 10 0 500 1000 1500 10 0 500 1000 1500 Collector current: Ic [A] Collector current: Ic [A] [INVERTER] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=600A, VGE=±15V, Tj=125°C, 150°C 10000 Switching time: ton, tr, toff, tf [nsec] Tj=125 C Tj=150oC 1000 o [INVERTER] Switching loss vs. Collector c urrent (typ.) Vcc=600, VGE=±15V, Rg=0.62Ω, Tj=125°C, 150°C Switching loss: Eon, Eoff, Err [mJ/pulse] 250 200 150 100 Err 50 0 0 500 1000 1500 Eon Tj=125oC Tj=150oC toff ton tr Eoff tf 100 10 0.1 1 10 100 Gate resistance: Rg [Ω] Collector current: Ic [A] [INVERTER] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=600A, VGE=±15V, Tj=125°C, 150°C Switching loss: Eon, Eoff, Err [mJ/pulse] 400 Tj=125oC Tj=150oC 300 Eon Collector current: Ic [A] [INVERTER] Reverse bias safe operating area (max.) +VGE=15V, -VGE=15V, Rg=0.62Ω, Tj=150°C 1400 1200 1000 800 600 400 200 0 200 Eoff 100 Err 0 0 1 10 100 0 500 1000 1500 Gate resistance: Rg [Ω] Collector-Emitter voltage: VCE [V] 3 2MBI600VJ-120-50 IGBT Modules http://www.fujisemi.com [INVERTER] Forward Current vs. Forward Voltage (typ.) chip 1400 1200 Forward current: IF [A] 1000 800 600 400 200 0 0 1 2 3 Forward on voltage: VF [V] 150°C 125°C Tj=25°C Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] [INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=±15V, Rg=0.62Ω, Tj=25°C 10000 1000 Irr 100 trr 10 0 500 1000 1500 Forward current: IF [A] [INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, VGE=±15V, Rg=0.62Ω, Tj=125°C, 150°C Thermal resistanse: Rth(j-c) [°C/W] *** 10000 Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Tj=125oC Tj=150oC 1000 Irr trr 100 Transient Thermal Resistance (max.) 0.1 FWD IGBT 0.01 10 0 500 1000 1500 Forward current: IF [A] 0.001 0.001 0.01 0.1 1 Pulse Width : Pw [sec] [THERMISTOR] Temperature characteristic (typ.) 100 Resistance : R [kΩ] 10 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 Temperature [°C] 4 2MBI600VJ-120-50 IGBT Modules http://www.fujisemi.com Outline Drawings, mm Equivalent Circuit Schematic [ Inverter ] [ Thermistor ] + CX1 T1 T2 G1.1 EX1.1 GND G1.2 EX1.2 G1.3 EX1.3 G2.1 Cu-Base EX2.1 G2.2 EX2.2 G2.3 EX2.3 5 2MBI600VJ-120-50 IGBT Modules http://www.fujisemi.com WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of March 2010. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Systems Co., Ltd. is (or shall be deemed) granted. Fuji Electric Systems Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Systems Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Systems Co., Ltd. to obtain prior approval. 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