GBC548

ISSUED DATE :2005/10/21 REVISED DATE : GBC548 Description NPN SILICON TRANSISTOR The GBC548 is designed for drive and output-stages of audio amplifiers. Features & DC Current Gain: 110~800 @VCE=5V, IC=2mA High Package Dimensions D & Complementary to GBC558 E S1 TO-92 A S E A T IN G PLANE b1 L REF. A S1 b b1 C e1 e b C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings (TA=25 : ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (continuous) Total Device Dissipation @ TA =25 : Derate above 25 : Total Device Dissipation @ TC =25 : Derate above 25 : Operating and Storage Junction Temperature Symbol VCBO VCEO VEBO IC PD PD TJ, Tstg R JA R JC Ratings 30 30 6 100 625 5.0 1.5 12 -55 ~ +150 200 83.3 Unit V V V mA mW mW/ : W mW/ : : : /W : /W Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Electrical Characteristics (TA = 25 : unless otherwise noted) Symbol BVCBO BVCEO BVEBO ICES *VCE(sat)1 *VCE(sat)2 *VBE(sat) *VBE(on)1 *VBE(on)2 *hFE fT Cob Min. 30 30 6 0.55 110 150 Typ. 0.09 0.2 0.7 300 1.7 Max. 15 0.25 0.6 0.7 0.77 800 4.5 Unit V V V nA V V V V V MHz pF Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCE=35V, VBE=0 IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=10mA, IB=0.5mA VCE=5V, IC=2mA VCE=5V, IC=10mA VCE=5V, IC=2mA VCE=5V, IC=10mA, f=100MHz VCB=10V, IC=0, f=1MHz *Pulse Test: Pulse Width 380 s, Duty Cycle 2% Classification Of hFE Rank Range A 110 ~ 220 B 200 ~ 450 C 420 ~ 800 GBC548 Page: 1/2 ISSUED DATE :2005/10/21 REVISED DATE : Characteristics Curve Fig 1. DC Current Gain Fig 2. Collector Saturation Region Fig 3. “Saturation” & “On” Voltages Fig 4. Temperature Coefficients Fig 5. Capacitances Fig 6. Bandwidth Product Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GBC548 Page: 2/2