GBG1040

1/3 GBG1040 The GBG1040 is designed for low voltage, high frequency inverter, free wheeling, and polarity protection application. Description Package Dimensions REF. A B C D E F S Millimeter Min. 6.40 5.20 6.80 2.20 0.70 0.60 Max. 6.80 5.50 7.20 2.80 0.90 0.90 REF. G H J K L M R Millimeter Min. 0.50 2.20 0.45 0 0.90 5.40 0.80 Max. 0.70 2.40 0.55 0.15 1.50 5.80 1.20 2.30 REF. Absolute Maximum Ratings Parameter Junction Temperature Storage Temperature Typical Thermal Resistance Junction to Case Typical Junction Capacitance R everse Leakage Current @ Tj = 25 : R everse Leakage Current @ Tj = 125 : VR=40V VR=40V Symbol Tj Tstg R JC Ratings -40~+125 -40~+125 3.0 405 0.3 40 0.65 0.6 340 Unit /W pF mA mA V V A Cj IRM VFM Forward Voltage Drop @ IF = 10A , Tj = 25 : Forward Voltage Drop @ IF = 10A , Tj = 125 : N on-Repetitive Peak Forward Surge Current 5Us Single half Sine-wave superimposed on rated load N on-Repetitive Peak Forward Surge Current 10ms Single half Sine-wave superimposed on rated load R ectangular waveform RMS Reverse Voltage P eak Repetitive Reverse Voltage IFSM 70 10 40 IF VR(RMS) VRRM A V V 2/3 Characteristics Curve 3/3 Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-58957671 FAX : 86-21-38950165