GMBT1815

GM BT1815 Description Package Dimensions 1/2 NP N E PITAX I AL P L ANAR T RANS ISTO R The GMBT1815 is Designed for use Driver Stage of AF Amplifier and General Purpose Application. REF A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0C 10 C Absolute Maximum Ratings at Ta = 25 : Parameter Junction Temperature Storage Temperature C ollector to Base Voltage C ollector to Emitter Voltage Emitter to Base Voltage C ollector Current Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 60 50 5 150 250 Unit V V V mA mW Characteristics Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 hFE3 fT C ob at Ta = 25 : Min. 60 50 5 120 25 80 80 Typ. Max. 100 100 250 1.0 700 3.5 MHz pF Unit V V V nA nA mV V IC=100uA IC=1mA IE=10uA VCB=60V VEB=5V IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=2mA VCE=6V, IC=150mA VCE=1V, IC=10mA VCE=10V, IC=1mA, f=100MHz VCB=10V, f=1MHz Test Conditions Classification of Rank Range hFE1 C4Y 120 - 240 C4G 200 - 400 C4B 350 - 700 2/2 Characteristics Curve Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 FAX : 86-21-38950165