G1115

PHOTODIODE GaAsP photodiode Diffusion type Photodiode for visible light detection Features Applications l Low dark current l High stability l Analytical instrument l Color identification s General ratings / Absolute maximum ratings Type No. Dimensional outline/ Window material * ➀/K ➁/K ➂/K ➃/R ➄/R ➅/L ➆/R Package Active area size (mm) 1.3 × 1.3 2.7 × 2.7 5.6 × 5.6 1.3 × 1.3 5.6 × 5.6 1.3 × 1.3 1.3 × 1.3 Effective active area (mm2) 1.66 7.26 29.3 1.66 29.3 1.66 1.66 Absolute maximum ratings Operating Storage Reverse temperature temperature voltage Topr Tstg VR Max. (V) (°C) (°C) G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 TO-18 TO-5 TO-8 Ceramic Ceramic TO-18 Plastic 5 -30 to +80 -40 to +85 s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Spectral Peak response sensitivity range wavelength λ λp (nm) G1115 G1116 G1117 G1118 G1120 G3067 G2711-01 (nm) Photo sensitivity S (A/W) λp GaP LED 560 nm Terminal Temp. Dark Short circuit Rise time capacitance coefficient current current tr of Ct Isc ID VR=0 V ID VR=0 V Max. x RL=1 kΩ He-Ne 100 l TCID f=10 kHz laser Min. Typ. V4=10 mV V4=1 V 633 nm (µA) (µA) (pA) (pA) (times/°C) (µs) (pF) 1 300 0.12 0.15 1 10 4 1400 0.45 0.6 2.5 25 15 6000 2 2.5 5 50 1 300 0.29 0.12 0.15 1 10 1.07 15 6000 2 2.5 5 50 1 300 0.75 0.95 1 10 1 300 0.15 0.18 1 10 Shunt resistance Rsh VR=10 mV NEP Type No. 300 to 680 640 0.3 0.29 Min. Typ. (GΩ) (GΩ) (W/Hz1/2) 10 80 1.5 × 10-15 4 30 2.5 × 10-15 2 15 3.5 × 10-15 10 80 1.5 × 10-15 2 15 3.5 × 10-15 10 80 1.5 × 10-15 10 80 1.5 × 10-15 * Window material K: borosilicate glass, L: lens type borosilicate glass, R: resin coating GaAsP photodiode sSpectral response 0.5 (Typ. Ta=25 ˚C) +1.5 Diffusion type (Typ.) sPhoto sensitivity temperature characteristic TEMPERATURE COEFFICIENT (%/˚C) PHOTO SENSITIVITY (A/W) 0.4 +1.0 0.3 +0.5 0.2 0.1 0 0 200 400 600 800 -0.5 200 400 600 800 WAVELENGTH (nm) KGPDB0019EA WAVELENGTH (nm) KGPDB0020EA sRise time vs. load resistance 10 ms G1117, G1120 1 ms G1116 100 µs (Typ. Ta=25 ˚C, VR=0 V) sDark current vs. reverse voltage 1 nA (Typ. Ta=25 ˚C) 100 pA DARK CURRENT RISE TIME G1117, G1120 10 pA G1116 10 µs G1115, G1118 G3067, G2711-01 1 pA 1 µs G1115, G1118 G2711-01, G3067 100 ns 2 10 10 3 10 4 10 5 10 6 100 fA 0.001 0.01 0.1 1 10 LOAD RESISTANCE (Ω) KGPDB0021EA REVERSE VOLTAGE (V) KGPDB0022EA sShunt resistance vs. ambient temperature 10 TΩ (Typ. VR=10 mV) G1115, G1118 G3067, G2711-01 1 TΩ sShort circuit current linearity 100 10-2 (Typ. Ta=25 ˚C, A light source fully illuminated) RL=100 Ω OUTPUT CURRENT (A) SHUNT RESISTANCE G1116 100 GΩ 10 -4 10-6 10-8 10 -10 10 GΩ 1 GΩ G1117, G1120 10-12 10-14 Refer to NEP value in characteristic table. 10-16 -16 -14 -12 -10 -8 -6 -4 -2 0 10 10 10 10 10 10 10 10 10 100 MΩ 10 MΩ -20 0 20 40 60 80 AMBIENT TEMPERATURE (˚C) KGPDB0023EA INCIDENT LIGHT LEVEL (lx) KGPDB0008EA GaAsP photodiode sDimensional outlines (unit: mm) ➀ G1115 WINDOW 3.0 ± 0.2 5.4 ± 0.2 3.55 ± 0.2 Diffusion type ➁ G1116 9.1 ± 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD PHOTOSENSITIVE SURFACE 0.45 LEAD 2.4 2.9 5.08 ± 0.2 Borosilicate glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. 2.54 ± 0.2 CONNECTED TO CASE Borosilicate glass window may extend a maximum of 0.1 mm beyond the upper surface of the cap. 14 CONNECTED TO CASE KGPDA0012EA 20 4.1 ± 0.2 4.7 ± 0.1 WINDOW 5.9 ± 0.1 8.1 ± 0.1 KGPDA0013EA ➂ G1117 13.9 ± 0.2 5.0 ± 0.2 ➃ G1118 CATHODE TERMINAL MARK 6.0 ± 0.2 ACTIVE AREA 5.0 ± 0.2 WINDOW 10.5 ± 0.1 12.35 ± 0.1 PHOTOSENSITIVE SURFACE 7.5 ± 0.2 MARK ( 1.4) 0.6 0.45 LEAD 3.0 ± 0.2 CONNECTED TO CASE Borosilicate glass window may extend a maximum of 0.2 mm beyond the upper surface of the cap. KGPDA0014EA 14 1.5 ± 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD 1.9 15 KGPDA0002EA GaAsP photodiode Diffusion type ➄ G1120 10.1 ± 0.1 ➅ G3067 5.4 ± 0.2 4.65 ± 0.1 8.9 ± 0.1 ACTIVE AREA PHOTOSENSITIVE SURFACE 2.0 ± 0.1 0.3 0.65 0.45 LEAD 10.5 0.5 LEAD 9.2 ± 0.3 7.4 ± 0.2 ANODE TERMINAL MARK 2.54 ± 0.2 8.0 ± 0.3 CONNECTED TO CASE Coating resin may extend a maximum of 0.1 mm beyond the upper surface of the package. KGPDA0008EA 14 4.5 ± 0.2 2.4 2.15 ± 0.3 KGPDA0009EA ➆ G2711-01 4.6 ± 0.2 (INCLUDING BURR) 5.6 ± 0.2 (INCLUDING BURR) 5.4 0.7 0.5 2.54 2.0 ANODE CATHODE NC CATHODE 10˚ 4.5 5.75 ± 0.2 5˚ 0.6 1.0 PHOTOSENSITIVE SURFACE 4.5 ± 0.4 3˚ 0.25 7.5 ± 5˚ KGPDA0003EA Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 3˚ 5.5 Cat. No. KGPD1002E01 Apr. 2001 DN