K3413-01

UV TO IR DETECTOR Two-color detector K1713/K3413-01, -02 Broad spectral response range from UV through IR K1713/K3413-01, -02 detectors have a sandwich structure in which an infrared transmitting silicon photodiode is mounted over an infrared detector element. This structure allows you to design instruments using the same optical path from UV through IR. Features Applications l Broad spectral response Suitable for spectrophotometers, flame monitors, etc. l Noncooled type: Room temperature operation for easy handling One-stage thermoelectrically cooled type: Keeps the detector temperature at a constant level to make high-precision measurements. l Spectrophotometers l Laser monitors l Flame monitors l Radiation thermometers Accessories (Optional) l Heatsink for thermoelectrically cooled type A3179-03 l Temperature controller for thermoelectrically cooled type C1103-04 l Photosensor amplifier C2719 l Amplifier for PbS and PbSe detectors C3757-02 s General ratings / Absolute maximum ratings Type No. Dimensional outline/ Window Package material *1 Cooling Detector Absolute maximum ratings Storage Active Thermistor TE-cooler Reverse O p erating area size allowable allowable voltage te m p erature te m p erature Topr Tstg VR dissipation current (mm) (mW) (A) (V) (°C) (°C) 2.4 × 2.4 5 1.8 × 1.8 100 *2 2.4 × 2.4 5 1.8 × 1.8 100 *2 -30 to +50 -55 to +50 2.4 × 2.4 5 1.8 × 1.8 100 *2 0.2 1.5 2.4 × 2.4 5 1.8 × 1.8 100 *2 K1713-01 ➀/S K1713-02 K3413-01 ➁/S K3413-02 TO-8 TO-5 Noncooled One-stage TE-cooled Si PbS Si PbSe Si PbS Si PbSe s Electrical and optical characteristics (Typ., unless otherwise noted) M e a sure m e nt condition Element temperature T (°C) Peak sensitivity wavelength λp (µm) 0.94 2.2 0.94 4.0 0.94 2.4 0.94 4.1 Photo sensitivity Shunt resistance S or dark resistance λ =λ p (A/W) 0.45 6 × 104 (V/W ) 0.45 5 × 102 (V/W ) 0.45 3 × 105 (V/W ) 0.45 1.5 × 103 (V/W ) (MΩ ) 300 0.2 to 2 300 0.5 to 1.8 300 0.5 to 10 300 1.5 to 5 D* λ =λ p (cm · Hz1/2/W) 1.4 × 1013 5 × 1010 *3 1.4 × 1013 5 × 108 *3 1.4 × 1013 1 × 1011 *3 1.4 × 1013 1 × 109 *3 Rise time tr VR=0 V RL=1 kΩ 10 to 90 % (µs) 0.2 *4 200 Max. *5 0.2 *4 3 Max. *5 0.2 *4 600 Max. *5 0.2 *4 5 Max. *5 Type No. Detector Si K1713-01 25 PbS Si K1713-02 25 PbSe Si 25 K3413-01 PbS -10 Si 25 K3413-02 PbSe -10 *1: Window material S: sapphire glass *2: Maximum supply voltage *3: Light source 500 K black body Chopping frequency: 600 Hz, Noise bandwidth: 60 Hz *4: λ=655 nm *5: 0 to 63 % Supply voltage: 15 V Load resistance: nearly equal to element dark resistance Input energy: 4.8 µW/cm2 (PbSe: 16.7 µW/cm 2) 1 Two-color detector s Spectral response Si photodiode 1014 (Typ. Ta=25 ˚C) K1713/K3413-01, -02 PbS photoconductive detector 100 (Typ. Ta=25 ˚C) 80 RELATIVE VALUE (%) T= -10 ˚C 60 D* (cm · Hz 2 /W) λ 1 1013 40 T=25 ˚C 20 10 12 0.2 0.4 0.6 0.8 1.0 1.2 0 1 1.5 2 2.5 3 3.5 WAVELENGTH (µm) WAVELENGTH (µm) KIRDB0058EE KIRDB0282EA PbSe photoconductive detector 100 (Typ. Ta=25 ˚C) 80 RELATIVE VALUE (%) 60 T= -10 ˚C 40 T=25 ˚C 20 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 WAVELENGTH (µm) KIRDB0283EA s Cooling characteristics of TE-cooler 30 20 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) s Current vs. voltage characteristics of TE-cooler 1.6 1.4 1.2 (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) ELEMENT TEMPERATURE (˚C) 10 CURRENT (A) 0 -10 -20 -30 -40 -50 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.2 0.4 0.6 0.8 1.0 1.2 CURRENT (A) VOLTAGE (V) KIRDB0276EA KIRDB0277EA 2 Two-color detector s Thermistor temperature characteristic 10 6 K1713/K3413-01, -02 (Typ.) RESISTANCE (Ω) 105 104 10 3 -40 -30 -20 -10 0 10 20 30 ELEMENT TEMPERATURE (˚C) KIRDB0278EA s Dimensional outline (unit: mm) ➀ K1713-01, -02 9.2 ± 0.3 8.1 ± 0.2 WINDOW 5.5 ± 0.2 Si 10.0 ± 0.2 5.1 ± 0.2 6.1 ± 0.2 10.2 ± 0.2 PbS, PbSe PbS, PbSe TE-COOLER (-) TE-COOLER (+) THERMISTOR Si (-) Si (+) 5.1 ± 0.2 KIRDA0043EE ➁ K3413-01, -02 15.3 ± 0.2 14 ± 0.2 Si WINDOW 10 ± 0.2 SAPPHIRE GLASS 6.1 ± 0.2 PbS PbSe 3.3 ± 0.2 4.3 ± 0.2 30 MIN. 0.4 LEAD 0.45 LEAD 5.1 ± 0.2 KIRDA0041EE Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Cat. No. KIRD1029E05 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 5.1 ± 0.2 Si (N) Si (P) PbS, PbSe PbS, PbSe 10.2 ± 0.2 12 MIN. PbS PbSe May 2004 DN 3