K3413-05

UV TO IR DETECTOR Two-color detector K3413-05/-08/-09 Wide spectral response range from UV to IR K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.25 µm to nearly 1.7 µm. The built-in thermoelectric cooler maintains a constant temperature during operation, allowing precision measurement with an improved S/N ratio. Features Applications l Wide spectral response range l Allows same optical path design l One-stage thermoelectrically cooled type l Spectrophotometers l Laser monitors l Flame monitors l Radiation thermometers s General ratings / Absolute maximum ratings Absolute maximum ratings Storage Thermistor TE-cooler Reverse Operating Detector te m p erature te m p erature allowable allowable voltage element Topr Tstg dissipation current VR (mm) (mW) (A) (V) (°C) (°C) Si 2.4 × 2.4 5 InGaAs 20 φ0.5 Si 2.4 × 2.4 5 0.2 1.5 -40 to +70 -55 to +85 InGaAs 2 φ1 Si 2.4 × 2.4 5 InGaAs 10 φ1 Active area Type No. Package Cooling K3413-05 K3413-08 K3413-09 TO-8 One-stage TE-cooled s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Measurement Peak Photo condition Spectral sensitivity sensitivity Element response wavelength D etector S temperature range ele m e nt λp λ=λp T (°C) 25 -10 25 -10 25 -10 (µm) 0.32 to 1.67 0.32 to 2.57 0.32 to 1.67 (µm) 0.94 1.55 0.94 2.30 0.94 1.55 Dark current ID VR=10 mV Max. (nA) 100 (pA) 0.25 *1 100 (pA) 7.5 (µA) *2 100 (pA) 0.35 *2 Shunt Resistance Rsh (MΩ) 200 3000 200 0.03 200 1500 D* λ=λp Rise time Terminal tr capacitance V R =0 V Ct R L =1 kΩ VR=5 V 10 to 90 % f=1 MHz (pF) 60 *5 12 60 *5 200 *2 60 *5 90 Type No. K3413-05 K3413-08 K3413-09 Si InGaAs Si InGaAs Si InGaAs Typ. (A/W) (nA) 0.45 50 (pA) 0.55 0.05 *1 0.45 50 (pA) 0.60 1.5 (µA) *2 0.45 50 (pA) 0.55 0.07 *2 (cm · Hz1/2/W) (ns) 1.4 × 1013 200 *3 13 1.2 × 10 1.5 *4 13 1.4 × 10 200 *3 10 7.4 × 10 23 *4 13 1.4 × 10 200 *3 13 1.2 × 10 7 *4 *1: VR=5 V *2: VR=1 V *3: λ=655 nm *4: VR=5 V, RL=50 Ω *5: VR=0 V, f=10 kHz 1 Two-color detector s Spectral response Si photodiode 0.7 0.6 (Typ. Ta=25 ˚C) K3413-05/-08/-09 InGaAs PIN photodiode (Typ. T= -10 ˚C) 0.7 0.6 PHOTO SENSITIVITY (A/W) 0.5 PHOTO SENSITIVITY (A/W) 0.5 0.4 0.3 K3413-05/-09 0.2 0.4 0.3 0.2 0.1 K3413-08 0.1 0 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 WAVELENGTH (µm) KIRDB0199EA WAVELENGTH (µm) KIRDB0212EA s Dark current vs. reverse voltage Si photodiode 1 nA (Typ. Ta=25 ˚C) InGaAs PIN photodiode 100 µA (Typ. Ta=25 ˚C) 10 µA K3413-08 DARK CURRENT DARK CURRENT 1 µA 100 pA 100 nA 10 nA K3413-09 1 nA K3413-05 10 pA 0.01 0.1 1 10 100 pA 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) KIRDB0200EA REVERSE VOLTAGE (V) KIRDB0213EA 2 Two-color detector s Terminal capacitance vs. reverse voltage Si photodiode (Typ. Ta=25 ˚C, f=10 kHz) 10 nF K3413-05/-08/-09 InGaAs PIN photodiode (Typ. Ta=25 ˚C, f=1 MHz) 100 pF TERMINAL CAPACITANCE TERMINAL CAPACITANCE 1 nF K3413-08 100 pF K3413-09 10 pF 10 pF K3413-05 1 pF 1 pF 0.01 0.1 1 10 100 fF 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) KIRDB0202EA REVERSE VOLTAGE (V) KIRDB0214EA s Shunt resistance vs. element temperature Si photodiode 10 TΩ 1 TΩ (Typ. VR=10 mV) InGaAs PIN photodiode (Typ. VR=10 mV) 100 GΩ 10 GΩ 1 GΩ SHUNT RESISTANCE 10 GΩ 1 GΩ SHUNT RESISTANCE 100 GΩ K3413-05 100 MΩ 10 MΩ 1 MΩ 100 kΩ 10 kΩ 1 kΩ 100 Ω -40 -20 0 20 40 60 80 100 K3413-08 K3413-09 100 MΩ 10 MΩ 1 MΩ 100 kΩ -40 -20 0 20 40 60 80 100 ELEMENT TEMPERATURE (˚C) KIRDB0204EA ELEMENT TEMPERATURE (˚C) KIRDB0215EA 3 Twe-color detector s Dimensional outline (unit: mm) 15.3 ± 0.2 14 ± 0.2 Si WINDOW 10 ± 0.2 K3413-05/-08/-09 InGaAs 4.4 ± 0.2 6.0 ± 0.2 0.45 LEAD 10.2 ± 0.2 12 MIN. InGaAs (ANODE) InGaAs (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR Si (CATHODE) Si (ANODE) 5.1 ± 0.2 10.0 ± 0.2 KIRDA0156ED Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2006 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 4 Cat. No. KIRD1041E03 May 2006 DN