S1336

PHOTODIODE Si photodiode S1336 series UV to near IR for precision photometry Features G High sensitivity G Low capacitance G High reliability Applications G Analytical instruments G Optical measurement equipment I General ratings / Absolute maximum ratings Type No. S1336-18BQ S1336-18BK S1336-5BQ S1336-5BK S1336-44BQ S1336-44BK S1336-8BQ S1336-8BK Dimensional outline/ Window material * Package (mm) TO-18 TO-5 TO-8 Active area size (mm) 1.1 × 1.1 2.4 × 2.4 3.6 × 3.6 5.8 × 5.8 Effective active area (mm2) 1.2 5.7 13 33 ➀/Q ➀/K ➁/Q ➁/K ➁/Q ➁/K ➂/Q ➂/K Peak sensitivity wavelength lp Absolute maximum rating Operating Storage Reverse voltage temperature temperature V4 Max. Topr Tstg (V) (°C) (°C) -20 to +60 -55 to +80 -40 to +100 -55 to +125 -20 to +60 -55 to +80 -40 to +100 -55 to +125 5 -20 to +60 -55 to +80 -40 to +100 -55 to +125 -20 to +60 -55 to +80 -40 to +100 -55 to +125 I Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted) Spectral response range Photo sensitivity S (A/W) Short circuit Terminal Temp. Dark Rise time capacicurrent current coeffitr Isc tance cient I, 100 lx VR=0 V Ct VR=10 mV of I, Type No. RL=1 k9 VR=0 V He-Ne Max. T+1, 200 nm Min. Typ. f=10 kHz l laser lp 633 Min. Typ. (nm) (nm) nm (µA) (µA) (pA) (times/°C) (µs) (pF) S1336-18BQ 190 to 1100 0.10 0.12 1 1.2 20 0.1 20 S1336-18BK 320 to 1100 S1336-5BQ 190 to 1100 0.10 0.12 4 5 30 0.2 65 S1336-5BK 320 to 1100 960 0.5 0.33 1.15 S1336-44BQ 190 to 1100 0.10 0.12 8 10 50 0.5 150 S1336-44BK 320 to 1100 S1336-8BQ 190 to 1100 0.10 0.12 22 28 100 1 380 S1336-8BK 320 to 1100 * Window material, K: borosilicate glass, Q: quartz glass Shunt resistance Rsh VR=10 mV NEP Min. Typ. (GW) (GW) (W/Hz1/2) 0.5 0.3 0.2 0.1 2 1 5.7 × 10-15 8.1 × 10-15 0.6 1.0 × 10-14 0.4 1.3 × 10-14 1 Si photodiode I Spectral response 0.7 (Typ. Ta =25 ˚C) S1336 series I Photo sensitivity temperature characteristic +1.5 (Typ. ) PHOTO SENSITIVITY (A/W) 0.6 0.5 0.4 0.3 S1336-BQ 0.2 0.1 S1336-BK 190 400 600 800 1000 TEMPERATURE COEFFICIENT (%/˚C) +1.0 +0.5 0 -0.5 190 400 600 800 1000 WAVELENGTH (nm) WAVELENGTH (nm) KSPDB0098EA KSPDB0053EB I Rise time vs. load resistance 1 ms (Typ. Ta=25 ˚C, VR=0 V) I Dark current vs. reverse voltage 10 nA (Typ. Ta=25 ˚C) S1336-8BQ/BK 100 µs S1336-8BQ/BK 1 nA 10 µs S1336-44BQ/BK DARK CURRENT RISE TIME 100 pA 1 µs S1336-18BQ/BK 100 ns S1336-5BQ/BK 10 ns 102 10 pA S1336-18BQ/BK S1336-44BQ/BK 1 pA S1336-5BQ/BK 103 104 105 100 fA 0.01 0.1 1 10 LOAD RESISTANCE (Ω) REVERSE VOLTAGE (V) KSPDB0099EA KSPDB0100EA 2 Si photodiode I Shunt resistance vs. ambient temperature 1 TΩ 100 GΩ 10 GΩ 1 GΩ 100 MΩ 10 MΩ S1336-8BQ/BK 1 MΩ 100 kΩ 10 kΩ -20 S1336-5BQ/BK S1336-44BQ/BK S1336-18BQ/BK (Typ. VR=10 mV) S1336 series SHUNT RESISTANCE 0 20 40 60 80 AMBIENT TEMPERATURE (˚C) KSPDB0101EA I Dimensional outlines (unit: mm) ➀ S1336-18BQ/-18BK WINDOW 3.0 ± 0.2 5.4 ± 0.2 3.6 ± 0.2 4.7 ± 0.1 ➁ S1336-5BQ/K, S1336-44BQ/K WINDOW 5.9 ± 0.1 9.1 ± 0.2 2.3 PHOTOSENSITIVE SURFACE 0.45 LEAD 2.8 5.08 ± 0.2 0.45 LEAD 2.54 ± 0.2 14 CONNECTED TO CASE CONNECTED TO CASE The K type borosilicate glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0102EB 20 4.1 ± 0.2 8.1 ± 0.1 KSPDA0103EA 3 Si photodiode ➂ S1336-8BQ/-8BK 13.9 ± 0.2 5.0 ± 0.2 S1336 series WINDOW 10.5 ± 0.1 12.35 ± 0.1 1.8 PHOTOSENSITIVE SURFACE 0.45 LEAD 7.5 ± 0.2 MARK ( 1.4) CONNECTED TO CASE The K type borosilicate glass window may extend a maximum of 0.2 mm above the upper surface of the cap. KSPDA0104EA HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, http://www.hamamatsu.com U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 15 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2002 Hamamatsu Photonics K.K. Cat. No. KSPD1022E03 Oct. 2002 DN 4