HN58X2464

HN58X2402/HN58X2404/HN58X2408 HN58X2416/HN58X2432/HN58X2464 Two-wire serial interface 2k EEPROM (256-word × 8-bit) 4k EEPROM (512-word × 8-bit) 8k EEPROM (1-kword × 8-bit)/16k EEPROM (2-kword × 8-bit) 32k EEPROM (4-kword × 8-bit)/64k EEPROM(8-kword × 8-bit) ADE-203-882B (Z) Rev. 1.0 Jan. 25, 1999 Description HN58X24xx series are two-wire serial interface EEPROM (Electrically Erasable and Programmable ROM). They realize high speed, low power consumption and a high level of reliability by employing advanced MNOS memory technology and CMOS process and low voltage circuitry technology. They also have a 32-byte page programming function to make their write operation faster. Features Single supply: 1.8 V to 5.5 V Two-wire serial interface (I2CTM serial bus* 1) Clock frequency: 400 kHz Power dissipation:  Standby: 3 µA(max)  Active (Read): 1 mA(max)  Active (Write): 3 mA(max) • Automatic page write: 32-byte/page • Write cycle time: 10 ms (2.7 V to 5.5 V )/15ms (1.8 V to 2.7 V ) • • • • HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 Features (cont.) • Endurance: 10 5 Cycles (Page write mode) • Data retention: 10 Years • Small size packages: TSSOP-8pin and SOP-8pin (Die shipment is also available) Note: 1. I2C is a trademark of Philips Corporation. Ordering Information Type No. Internal organization Operating voltage Frequency Package 1.8 V to 5.5 V 400 kHz 150 mil 8-pin plastic SOP (FP-8DB) HN58X2402FP 2k bit (256 × 8-bit) HN58X2404FP 4k bit (512 × 8-bit) HN58X2408FP 8k bit (1024 × 8-bit) HN58X2416FP 16k bit (2048 × 8-bit) HN58X2432FP 32k bit (4096 × 8-bit) HN58X2464FP 64k bit (8192 × 8-bit) HN58X2402T HN58X2404T HN58X2408T HN58X2416T HN58X2432T HN58X2464T 2k bit (256 × 8-bit) 4k bit (512 × 8-bit) 8k bit (1024 × 8-bit) 16k bit (2048 × 8-bit) 32k bit (4096 × 8-bit) 64k bit (8192 × 8-bit) 1.8 V to 5.5 V 400 kHz 8-pin plastic TSSOP (TTP-8D) Note: Industrial versions (Temperature range: –20 to +85˚C, –40 to +85˚C) are also available. Specifications of the industrial versions are identical with the specifications of the 0 to +70˚C version. 2 HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 Pin Arrangement 8-pin TSSOP 8-pin SOP A0 A1 A2 VSS 1 2 3 4 8 7 6 5 (Top view) VCC WP SCL SDA Pin Description Pin name A0 to A2 SCL SDA WP VCC VSS Function Device address Serial clock input Serial data input/output Write protect Power supply Ground 3 HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 Block Diagram VCC VSS Address generator WP A0, A1, A2 SCL SDA Control logic High voltage generator X decoder Memory array Y decoder Y-serect & Sense amp. Serial-parallel converter Absolute Maximum Ratings Parameter Supply voltage relative to VSS Input voltage relative to V SS Operating temperature range* Storage temperature range 1 Symbol VCC Vin Topr Tstg Value –0.6 to +7.0 –0.5* to +7.0* 0 to +70 –65 to +125 2 3 Unit V V ˚C ˚C Notes: 1. Including electrical characteristics and data retention. 2. Vin (min): –3.0 V for pulse width ≤ 50 ns. 3. Should not exceed VCC + 1.0 V. 4 HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 DC Operating Conditions Parameter Supply voltage Symbol VCC VSS Input high voltage Input low voltage Operating temperature VIH VIL Topr Min 1.8 0 VCC × 0.7 –0.3* 0 1 Typ — 0 — — — Max 5.5 0 VCC + 1.0 VCC × 0.3 70 Unit V V V V ˚C Notes: 1. VIL (min): –1.0 V for pulse width ≤ 50 ns. DC Characteristics (Ta = 0 to +70˚C, VCC = 1.8 V to 5.5 V) Parameter Input leakage current Output leakage current Standby V CC current Read VCC current Write VCC current Output low voltage Symbol I LI I LO I SB I CC1 I CC2 VOL2 Min — — — — — — Typ — — 1.0 — — — Max 2.0 2.0 3.0 1.0 3.0 0.4 Unit µA µA µA mA mA V Test conditions VCC = 5.5 V, Vin = 0 to 5.5 V VCC = 5.5 V, Vout = 0 to 5.5 V Vin = VSS or VCC VCC = 5.5 V, Read at 400 kHz VCC = 5.5 V, Write at 400 kHz VCC = 4.5 to 5.5 V, IOL = 1.6 mA VCC = 2.7 to 4.5 V, IOL = 0.8 mA VCC = 1.8 to 2.7 V, IOL = 0.4 mA VCC = 1.8 to 2.7 V, IOL = 0.2 mA VOL1 — — 0.2 V Capacitance (Ta = 25˚C, f = 1 MHz) Parameter Symbol Min — — Typ — — Max 6.0 6.0 Unit pF pF Test conditions Vin = 0 V Vout = 0 V Input capacitance (A0 to A2, SCL, WP) Cin*1 Output capacitance (SDA) Note: CI/O* 1 1. This parameter is sampled and not 100% tested. 5 HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 AC Characteristics (Ta = 0 to +70˚C, VCC = 1.8 to 5.5 V) Test Conditions • Input pules levels:  VIL = 0.2 × VCC  VIH = 0.8 × VCC • Input rise and fall time: ≤ 20 ns • Input and output timing reference levels: 0.5 × VCC • Output load: TTL Gate + 100 pF Parameter Clock frequency Clock pulse width low Clock pulse width high Noise suppression time Access time Bus free time for next mode Start hold time Start setup time Data in hold time Data in setup time Input rise time Input fall time Stop setup time Data out hold time Write cycle time VCC = 2.7 V to 5.5 V VCC = 1.8 V to 2.7 V Symbol f SCL t LOW t HIGH tI t AA t BUF t HD.STA t SU.STA t HD.DAT t SU.DAT tR tF t SU.STO t DH t WC t WC Min — 1200 600 — 100 1200 600 600 0 100 — — 600 50 — — Typ — — — — — — — — — — — — — — — — Max 400 — — 50 900 — — — — — 300 300 — — 10 15 Unit kHz ns ns ns ns ns ns ns ns ns ns ns ns ns ms ms 2 2 1 1 1 Notes Notes: 1. This parameter is sampled and not 100% tested. 2. t WC is the time from a stop condition to the end of internally controlled write cycle. 6 HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 Timing Waveforms Bus Timing 1/fSCL tLOW tF SCL tSU.STA tHD.STA SDA (in) tAA SDA (out) tHIGH tR tHD.DAT tSU.DAT tSU.STO tBUF tDH Write Cycle Timing Stop condition Start condition SCL SDA D0 in Write data (Address (n)) ACK tWC (Internally controlled) 7 HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 Pin Function Serial Clock (SCL) The SCL pin is used to control serial input/output data timing. The SCL input is used to positive edge clock data into EEPROM device and negative edge clock data out of each device. Maximum clock rate is 400 kHz. Serial Input/Output data (SDA) The SDA pin is bidirectional for serial data transfer. The SDA pin needs to be pulled up by resistor as that pin is open-drain driven structure. Use proper resistor value for your system by considering V OL, IOL and the SDA pin capacitance. Except for a start condition and a stop condition which will be discussed later, the SDA transition needs to be completed during SCL low period. Data Validity (SDA data change timing waveform) SCL SDA Data change Note: Data change High-to-low and low-to-high change of SDA should be done during SCL low periods. Device address (A0, A1, A2) Eight devices can be wired for one common data bus line as maximum. Device address pins are used to distinguish each device and device address pins should be connected to V CC or V SS . When device address code provided from SDA pin matches corresponding hard-wired device address pins A0 to A2, that one device can be activated. As for 4k to 16k EEPROM, whole or some device address pins don't need to be fixed since device address code provided from the SDA pin is used as memory address signal. 8 HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 Pin Connections for A0 to A2 Pin connection Max connect Memory size number 2k bit 4k bit 8k bit 16k bit 32k bit 64k bit 8 4 2 1 8 8 A2 1 A1 A0 VCC/V SS ×* 2 × × VCC/V SS VCC/V SS Notes VCC/V SS* VCC/V SS VCC/V SS VCC/V SS × VCC/V SS VCC/V SS VCC/V SS × × VCC/V SS VCC/V SS Use A0 for memory address a8 Use A0, A1 for memory address a8 and a9 Use A0, A1, A2 for memory address a8, a9 and a10 Notes: 1. “VCC/V SS ” means that device address pin should be connected to V CC or VSS. 2. × = Don’t care (Open is also approval.) Write Protect (WP) When the Write Protect pin (WP) is high, the write protection feature is enabled and operates as shown in the following table. When the WP is low, write operation for all memory arrays are allowed. The read operation is always activated irrespective of the WP pin status. WP should be fixed high or low during operations since WP does not provide a latch function. Write Protect Area Write protect area WP pin status 2k bit VIH VIL Upper 1/2 (1k bit) 4k bit Upper 1/2 (2k bit) 8k bit Upper 1/2 (4k bit) 16k bit Upper 1/2 (8k bit) 32k bit Upper 1/4 (8k bit) 64k bit Upper 1/4 (16k bit) Normal read/write operation 9 HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 Functional Description Start Condition A high-to-low transition of the SDA with the SCL high is needed in order to start read, write operation. (See start condition and stop condition) Stop Condition A low-to-high transition of the SDA with the SCL high is a stop condition. The stand-by operation starts after a read sequence by a stop condition. In the case of write operation, a stop condition terminates the write data inputs and place the device in a internally-timed write cycle to the memories. After the internally-timed write cycle which is specified as tWC, the device enters a standby mode. (See write cycle timing) Start Condition and Stop Condition SCL SDA (in) Start condition Stop condition Acknowledge All addresses and data words are serially transmitted to and from in 8-bit words. The receiver sends a zero to acknowledge that it has received each word. This happens during ninth clock cycle. The transmitter keeps bus open to receive acknowledgment from the receiver at the ninth clock. In the write operation, EEPROM sends a zero to acknowledge after receiving every 8-bit words. In the read operation, EEPROM sends a zero to acknowledge after receiving the device address word. After sending read data, the EEPROM waits acknowledgment by keeping bus open. If the EEPROM receives zero as an acknowledge, it sends read data of next address. If the EEPROM receives acknowledgment "1" (no acknowledgment) and a following stop condition, it stops the read operation and enters a stand-by mode. If the EEPROM receives neither acknowledgment "0" nor a stop condition, the EEPROM keeps bus open without sending read data. 10 HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 Acknowledge Timing Waveform SCL SDA IN 1 2 8 9 Acknowledge out SDA OUT Device Addressing The EEPROM device requires an 8-bit device address word following a start condition to enable the chip for a read or a write operation. The device address word consists of 4-bit device code, 3-bit device address code and 1-bit read/write(R/W) code. The most significant 4-bit of the device address word are used to distinguish device type and this EEPROM uses “1010” fixed code. The device address word is followed by the 3-bit device address code in the order of A2, A1, A0. The device address code selects one device out of all devices which are connected to the bus. This means that the device is selected if the inputted 3-bit device address code is equal to the corresponding hard-wired A2-A0 pin status. As for the 4kbit, 8kbit and 16kbit EEPROMs, whole or some bits of their device address code may be used as the memory address bits. For example, A0 is used as a8 of memory address for the 4kbit, A0 and A1 are used as a8 and a9 for the 8kbit. The 16kbit doesn't use the device address code instead all 3 bits are used as the memory address bits a8, a9 and a10. The eighth bit of the device address word is the read/write(R/W) bit. A write operation is initiated if this bit is low and a read operation is initiated if this bit is high. Upon a compare of the device address word, the EEPROM enters the read or write operation after outputting the zero as an acknowledge. The EEPROM turns to a stand-by state if the device code is not “1010” or device address code doesn’t coincide with status of the correspond hard-wired device address pins A0 to A2. Device Address Word Device address word (8-bit) Device code (fixed) 2k, 32k, 64k 1 4k 8k 16k 1 1 1 0 0 0 0 1 1 1 1 0 0 0 0 Device address code*1 A2 A2 A2 a10 A1 A1 a9 a9 A0 a8 a8 a8 R/W code*2 R/W R/W R/W R/W Notes: 1. A2 to A0 are device address and a10 to a8 are memory address. 2. R/W=“1” is read and R/W = “0” is write. 11 HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 Write Operations Byte Write: A write operation requires an 8-bit device address word with R/W = “0”. Then the EEPROM sends acknowledgment "0" at the ninth clock cycle. After these, the 2kbit to 16kbit EEPROMs receive 8-bit memory address word, on the other hand the 32kbit and 64kbit EEPROMs receive 2 sequence 8-bit memory address words. Upon receipt of this memory address, the EEPROM outputs acknowledgment "0" and receives a following 8-bit write data. After receipt of write data, the EEPROM outputs acknowledgment "0". If the EEPROM receives a stop condition, the EEPROM enters an internally-timed write cycle and terminates receipt of SCL, SDA inputs until completion of the write cycle. The EEPROM returns to a standby mode after completion of the write cycle. Byte Write Operation Device address 2k to 16k Start Device address 32k to 64k Start 1010 W Memory address (n) W a7 a6 a5 a4 a3 a2 a1 a0 Write data (n) D7 D6 D5 D4 D3 D2 D1 D0 1010 ACK R/W 1st Memory address (n) *1 *1 *1 a12 *2 a11 a10 a9 a8 ACK ACK Stop 2nd Memory address (n) a7 a6 a5 a4 a3 a2 a1 a0 Write data (n) D7 D6 D5 D4 D3 D2 D1 D0 ACK R/W ACK ACK Stop Notes: 1. Don‘t care bits for 32k and 64k. 2. Don‘t care bit for 32k. 12 HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 Page Write: The EEPROM is capable of the page write operation which allows any number of bytes up to 32 bytes to be written in a single write cycle. The page write is the same sequence as the byte write except for inputting the more write data. The page write is initiated by a start condition, device address word, memory address(n) and write data(Dn) with every ninth bit acknowledgment. The EEPROM enters the page write operation if the EEPROM receives more write data(Dn+1) instead of receiving a stop condition. The a0 to a4 address bits are automatically incremented upon receiving write data(Dn+1). The EEPROM can continue to receive write data up to 32 bytes. If the a0 to a4 address bits reaches the last address of the page, the a0 to a4 address bits will roll over to the first address of the same page and previous write data will be overwritten. Upon receiving a stop condition, the EEPROM stops receiving write data and enters internally-timed write cycle. Page Write Operation Device address 2k to 16k Start Device address 32k to 64k Start 1010 W Memory address (n) W a7 a6 a5 a4 a3 a2 a1 a0 Write data (n) D7 D6 D5 D4 D3 D2 D1 D0 Write data (n+m) D5 D4 D3 D2 D1 D0 1010 ACK R/W 1st Memory address (n) *1 *1 *1 a12 *2 a11 a10 a9 a8 ACK ACK Stop ACK Write data (n) D7 D6 D5 D4 D3 D2 D1 D0 2nd Memory address (n) a7 a6 a5 a4 a3 a2 a1 a0 Write data (n+m) D5 D4 D3 D2 D1 D0 ACK R/W ACK ACK ACK ACK Stop Notes: 1. Don‘t care bits for 32k and 64k. 2. Don‘t care bit for 32k. 13 HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 Acknowledge Polling: Acknowledge polling feature is used to show if the EEPROM is in a internally-timed write cycle or not. This features is initiated by the stop condition after inputting write data. This requires the 8-bit device address word following the start condition during a internally-timed write cycle. Acknowledge polling will operate R/W code = “0”. Acknowledgment “1” (no acknowledgment) shows the EEPROM is in a internally-timed write cycle and acknowledgment “0” shows that the internally-timed write cycle has completed. See Write Cycle Polling using ACK. Write Cycle Polling using ACK Send write command Send stop condition to initiate write cycle Send start condition Send device address word with R/W = 0 ACK returned Yes Next operation is addressing the memory Yes Send memory address No No Send start condition Send stop condition Proceed write operation Proceed random address read operation Send stop condition 14 HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 Read Operation There are three read operations: current address read, random read, and sequential read. Read operations are initiated the same way as write operations with the exception of R/W = “1”. Current Address Read: The internal address counter maintains the last address accessed during the last read or write operation, with incremented by one. Current address read accesses the address kept by the internal address counter. After receiving a start condition and the device address word(R/W is “1”), the EEPROM outputs the 8-bit current address data from the most significant bit following acknowledgment “0” If the EEPROM receives acknowledgment “1” (no acknowledgment) and a following stop condition, the EEPROM stops the read operation and is turned to a standby state. In case the EEPROM have accessed the last address of the last page at previous read operation, the current address will roll over and returns to zero address. In case the EEPROM have accessed the last address of the page at previous write operation, the current address will roll over within page addressing and returns to the first address in the same page. The current address is valid while power is on. The current address after power on will be indefinite. The random read operation described below is necessary to define the memory address. Current Address Read Operation Device address 2k to 64k Start *1 *2 *3 Read data (n+1) R D7 D6 D5 D4 D3 D2 D1 D0 1010 ACK R/W No ACK Stop Notes: 1. Don‘t care bit for 16k. 2. Don‘t care bits for 8k and 16k. 3. Don‘t care bits for 4k, 8k and 16k. Random Read: This is a read operation with defined read address. A random read requires a dummy write to set read address. The EEPROM receives a start condition, device address word(R/W=0) and memory address (8-bit for 2kbit to 16kbit EEPROMs, 2 × 8-bit for 32kbit and 64kbit EEPROMs) sequentially. The EEPROM outputs acknowledgment “0” after receiving memory address then enters a current address read with receiving a start condition. The EEPROM outputs the read data of the address which was defined in the dummy write operation. After receiving acknowledgment “1”(no acknowledgment) and a following stop condition, the EEPROM stops the random read operation and returns to a standby state. 15 HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 Random Read Operation Device address 2k to 16k Start 1010 @@@ W Memory address (n) a7 a6 a5 a4 a3 a2 a1 a0 Device address 1010 Start ACK ### R Read data (n) D7 D6 D5 D4 D3 D2 D1 D0 ACK R/W Dummy write ACK No ACK Stop R/W Currect address read Device address 32k to 64k Start 1010 @@@ W 1st Memory address (n) *1 *1 *1 a12 *2 a11 a10 a9 a8 2nd Memory address (n) a7 a6 a5 a4 a3 a2 a1 a0 Device address 1010 Start ACK ### R Read data (n) D7 D6 D5 D4 D3 D2 D1 D0 ACK R/W Dummy write ACK R/W ACK No ACK Stop Currect address read Notes: 1. Don‘t care bits for 32k and 64k. 2. Don‘t care bit for 32k. 3. 2nd device address code (#) should be same as 1st (@). Sequential Read: Sequential reads are initiated by either a current address read or a random read. If the EEPROM receives acknowledgment “0” after 8-bit read data, the read address is incremented and the next 8-bit read data are coming out. This operation can be continued as long as the EEPROM receives acknowledgment “0”. The address will roll over and returns address zero if it reaches the last address of the last page. The sequential read can be continued after roll over. The sequential read is terminated if the EEPROM receives acknowledgment “1” (no acknowledgment) and a following stop condition. Sequential Read Operation Device address 2k to 64k Start 1010 R Read data (n) D7 D6 D5 D4 D3 D2 D1 D0 Read data (n+1) Read data (n+2) Read data (n+m) D7 D6 D5 D4 D3 D2 D1 D0 D7 D6 D5 D4 D3 D2 D1 D0 D5 D4 D3 D2 D1 D0 ACK R/W ACK ACK ACK No ACK Stop 16 HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 Notes Data protection at VCC On/Off When VCC is turned on or off, noise on the SCL and SDA inputs generated by external circuits (CPU, etc) may act as a trigger and turn the EEPROM to unintentional program mode. To prevent this unintentional programming, this EEPROM have a power on reset function. Be careful of the notices described below in order for the power on reset function to operate correctly. • SCL and SDA should be fixed to VCC or VSS during VCC on/off. Low to high or high to low transition during VCC on/off may cause the trigger for the unintentional programming. • VCC should be turned off after the EEPROM is placed in a standby state. • VCC should be turned on from the ground level(VSS ) in order for the EEPROM not to enter the unintentional programming mode. • VCC turn on speed should be longer than 10 us. Write/Erase Endurance and Data retention Time The endurance is 10 5 cycles in case of page programming and 104 cycles in case of byte programming (1% cumulative failure rate). The data retention time is more than 10 years when a device is page-programmed less than 104 cycles. Noise Suppression Time This EEPROM have a noise suppression function at SCL and SDA inputs, that cut noise of width less than 50 ns. Be careful not to allow noise of width more than 50 ns. 17 HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 Package Dimensions HN58X2402FP/HN58X2404FP/HN58X2408FP/HN58X2416FP/HN58X2432FP/HN58X2464FP (FP-8DB) Preliminary Unit: mm 4.89 5.15 Max 5 8 3.90 1 4 1.73 Max 0.034 *0.22 + 0.017 – 0.20 ± 0.03 6.02 ± 0.18 1.06 0° – 8° 0.69 Max 0.114 0.14 + 0.038 – 1.27 *0.42 +0.063 –0.064 0.40 ± 0.06 0.289 0.60 + 0.194 – 0.10 0.25 M Hitachi Code JEDEC EIAJ Weight (reference value) FP-8DB — — 0.08 g *Dimension including the plating thickness Base material dimension 18 HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 Package Dimensions (cont.) HN58X2402T/HN58X2404T/HN58X2408T/HN58X2416T/HN58X2432T/HN58X2464T (TTP-8D) Preliminary Unit: mm 3.00 3.20 Max 8 5 4.40 1 *0.22 +0.08 –0.07 4 0.65 1.00 0.13 M 6.40+0.10 –0.20 0.675 Max *0.17 ± 0.05 0.15 ± 0.04 1.10 Max 0.07 +0.03 –0.04 0° – 8° 0.50 ± 0.10 0.20 ± 0.06 0.10 *Dimension including the plating thickness Base material dimension Hitachi Code JEDEC EIAJ Weight (reference value) TTP-8D — — 0.034 g 19 HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 2000 Sierra Point Parkway Brisbane, CA 94005-1897 Tel: (800) 285-1601 Fax: (303) 297-0447 Hitachi Europe GmbH Electronic components Group Dornacher Straße 3 D-85622 Feldkirchen, Munich Germany Tel: (89) 9 9180-0 Fax: (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: (1628) 585000 Fax: (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: (2) 2718-3666 Fax: (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: (2) 735 9218 Fax: (2) 730 0281 Telex: 40815 HITEC HX Copyright © Hitachi, Ltd., 1998. All rights reserved. Printed in Japan. 20 HN58X2402/58X2404/58X2408/58X2416/58X2432/58X2464 Revision Record Rev. 0.0 0.1 Date Feb. 5, 1998 May. 22, 1998 Contents of Modification Initial issue Change of description for Acknowledge Polling Addition of flow for Write Cycle Polling using ACK Absolute Maximum Ratings Tstg: –55 to +125˚C to –65 to +125˚C AC Characteristics Addition of t HD.DAT (VCC = 1.8 V to 3.0 V): 20/—/— ns Addition of t HD.DAT (VCC = 3.0 V to 5.5 V): 10/—/— ns Package Dimensions Change of FP-8DB and TTP-8D Deletion of Preliminary Change test conditions of t HD.DAT VCC = 3.0 V to 5.5 V/1.8 V to 3.0 V to VCC = 1.8 V to 5.5 V t HD.DAT min (3.0 V to 5.5 V/1.8 V to 3.0 V): 10/20 ns to 0 ns Package Dimensions Change of FP-8DB and TTP-8D Drawn by Approved by M. Terasawa T. Muto T. Okada T. Muto 1.0 Jan. 25, 1999 21