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226E

226E

  • 厂商:

    HITTITE

  • 封装:

  • 描述:

    226E - GaAs MMIC 3V SOT26 TRANSMIT / RECEIVE SWITCH, DC - 2 GHz - Hittite Microwave Corporation

  • 数据手册
  • 价格&库存
226E 数据手册
HMC226 / 226E v03.0505 Typical Applications • 900 MHz ISM/Cellular • 1900 MHz PCS The HMC226 / HMC226E is ideal for: Functional Diagram ED U IN NT T O SC DUC DI RO P Features Low Insertion Loss: 0.6 dB Ultra Small Package: SOT26 High Input P1dB: +35 to +38 dBm High Input IP3: +55 to +61 dBm Positive Control: 0/+3V to 0/+8V Included in the HMC-DK005 Designer’s Kit GaAs MMIC +3V SOT26 TRANSMIT / RECEIVE SWITCH, DC - 2 GHz w r Ne o ed f d General Description men om The HMC226 & HMC226E are low-cost SPDT switRec ches in 6-lead SOT26 packages for use in transmitNot receive applications which require very low distortion at high signal power levels. The device can control signals from DC to 2.0 GHz and is especially suited for 450 MHz, 900 MHz, and 1.8 - 2 GHz applications with 0.5 to 0.8 dB loss. The design provides exceptional P1dB and intermodulation performance; a +35 dBm 1dB compression point and +55 dBm third order intercept at +3 volt bias. RF1 and RF2 are reflective opens when “Off”. On-chip circuitry allows single positive supply operation at very low DC current with control inputs compatible with CMOS and most TTL logic families. s sign De 11 SWITCHES - SPDT T/R - SMT Electrical Specifi cations, TA = +25° C, Vctl = 0/+3 Vdc, 50 Ohm System Parameter Frequency DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz DC - 0.5 GHz DC - 1.0 GHz DC - 2.0 GHz 0/5V Control 0/3V Control 0/5V Control 0/3V Control 0.3 - 2.0 GHz 0.3 - 2.0 GHz DC - 2.0 GHz tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 70 140 ns ns 23 17 12 23 21 14 34 31 Min. Typ. 0.5 0.6 0.8 26 20 15 27 25 18 38 35 61 55 Max. 0.8 0.9 1.2 Units dB dB dB dB dB dB dB dB dB dBm dBm dBm dBm Insertion Loss Isolation Return Loss Input Power for 1 dB Compression Input Third Order Intercept (Two-Tone Input Power = +26 dBm Each Tone) Switching Characteristics 11 - 2 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC226 / 226E v03.0505 Insertion Loss vs Temperature 0 -0.5 INSERTION LOSS (dB) -1 -1.5 -2 -2.5 -3 0 ED U IN NT T O SC DUC DI RO P Isolation 0 -10 ISOLATION (dB) -20 +25 C +85 C -40 C GaAs MMIC +3V SOT26 TRANSMIT / RECEIVE SWITCH, DC - 2 GHz 0.5 1 1.5 FREQUENCY (GHz) w r Ne o ed f d men om Rec Not -40 -50 2 2.5 0 0.5 1 40 INPUT COMPRESSION (dBm) -30 s sign De 1.5 2 2.5 FREQUENCY (GHz) Return Loss 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 0 0.5 1 1.5 2 2.5 FREQUENCY (GHz) RFC RF1,RF2 Input 0.1 and 1.0 dB Compression vs. Control Voltage @ 900 MHz 11 SWITCHES - SPDT T/R - SMT 11 - 3 35 30 25 0.1 dB Compression 1 dB Compression 20 2 3 4 5 6 7 8 Control Voltage (Vdc) Compression vs. Control Voltage @ 900 MHz Control Input (Vdc) +3 +5 +7 Input Power for 0.1 dB Compression (dBm) 30 33 35 Input Power for 1.0 dB Compression (dBm) 35 38 38.5 Truth Table *Control Input Voltage Tolerances are ± 0.2 Vdc. Control Input* A (Vdc) 0 +3 0 +5 0 +8 B (Vdc) +3 0 +5 0 +8 0 Control Current Ia (uA) -5 5 -10 10 -45 45 Ib (uA) 5 -5 10 -10 45 -45 Signal Path State RF to RF1 ON OFF ON OFF ON OFF RF to RF2 OFF ON OFF ON OFF ON Caution: Do not operate continuously at power levels >1 dB compression and do not “hot switch” power levels greater than +23dBm (VCTL = +3Vdc). Absolute Maximum Ratings Max. Input Power (VCTL = 0/+3V) Storage Temperature Operating Temperature ESD Sensitivity (HBM) 0.05 GHz 0.5 - 2 GHz +27 dBm +36 dBm -0.2 to +12 Vdc -65 to +150 °C -40 to +85 °C Class 1A Control Voltage Range (A & B) DC Blocks are required at ports RFC, RF1 and RF2. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC226 / 226E v03.0505 Outline Drawing ED U IN NT T O SC DUC DI RO P w r Ne o ed f d men om Rec Not NOTES: GaAs MMIC +3V SOT26 TRANSMIT / RECEIVE SWITCH, DC - 2 GHz s sign De 11 SWITCHES - SPDT T/R - SMT Package Information Part Number HMC226 HMC226E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 5. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1 [1] Package Marking [3] H226 XXXX 226E XXXX [2] [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX Typical Application Circuit Notes: 1. Set logic gate and switch Vdd = +3V to +5V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd of 3 to 8 Volts applied to the CMOS logic gates. 3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. 4. Highest RF signal power capability is achieved with V set to +10V. The switch will operate properly (but at lower RF power capability) at bias voltages down to +3V. 11 - 4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC226 / 226E v03.0505 Evaluation Circuit Board ED U IN NT T O SC DUC DI RO P w r Ne o ed f d men om Rec Not s sign De GaAs MMIC +3V SOT26 TRANSMIT / RECEIVE SWITCH, DC - 2 GHz 11 SWITCHES - SPDT T/R - SMT 11 - 5 List of Materials for Evaluation PBC 101675 [1] Item J1 - J3 J4 - J7 C1 - C3 U1 PCB [2] Description PCB Mount SMA RF Connector DC Pin 330 pF capacitor, 0402 Pkg. HMC226 / HMC226E T/R Switch 101659 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF port should have 50 ohm impedance and the package ground leads and package bottom should be connected directly to the ground plane similar to that shown above. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

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