2SC4944

2SC4944 DUAL TRANSISTOR (NPN+ NPN) SOT-353 Features Small package (dual type) High voltage and high current High hFE, excellent hFE linearity Complementary to 2SA1873 Marking: LY LGR 1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Parameter Value 60 50 5 150 200 150 -55 to150 Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions Min 60 50 5 0.1 0.1 120 400 0.25 80 3.5 V MHz pF Typ Max Unit V V V μA μA IC=100μA,IE=0 IC=1mA,IB=0 IE=100μA,IC=0 VCB=60V,IE=0 VEB=5V,IC=0 VCE=6V,IC=2mA IC=100mA,IB=10mA VCE=10V,IC=1mA VCB=10V,IE=0,f=1MHz CLASSIFICATION OF Rank Range Marking hFE Y 120-240 LY GR 200-400 LGR 1 JinYu semiconductor www.htsemi.com Date:2011/ 05