BC847S

BC847S Multi-chip transistor (NPN) SOT-363 APPLICATION This device is designed for general purpose amplifier applications Marking :1C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PD RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Power Dissipation Thermal Resistance. Junction to Ambient Junction Temperature Storage Temperature Range Value 50 45 6 200 200 625 150 -55~+150 mA mW ℃/W ℃ V Units E1 B1 C2 C1 B2 E2 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain* Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat)(1) Collector-emitter saturation voltage VCE(sat)(2) VBE(1) Base-emitter voltage VBE(2) Transition frequency Collector output capacitance VCE=5V,IC=10mA VCE=5V,IC=20mA ,f=100MHz VCB=10V,IE=0,f=1MHz 200 2 0.77 V MHz pF IC=100mA,IB=5mA VCE=5V,IC=2mA 0.58 0.65 0.7 V V Test conditions Min 50 45 6 15 nA VEB =4V , IC=0 VCE=5V,IC=2mA IC=10mA,IB=0.5mA 110 15 630 0.25 V Typ Max Unit V V V IC=10µA,IE=0 IC=1mA,IB=0 IE=10µA,IC=0 VCB=30V,IE=0 fT Cob *pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. 1 JinYu semiconductor www.htsemi.com Date:2011/ 05 BC847S Typical Characteristics 50 IC —— VCE COMMON EMITTER o Ta=25 C 1000 hFE o —— IC COMMON EMITTER VCE=5V Ta=100 C (mA) 40 100uA 80uA 30 IC COLLECTOR CURRENT 70uA 60uA DC CURRENT GAIN hFE 90uA 300 Ta=25 C o 100 20 50uA 40uA 30uA 30 10 20uA IB=10uA 0 0 10 20 30 40 50 10 1 3 10 30 100 200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) 1000 VCEsat —— IC COMMON EMITTER IC/IB=20 1000 900 800 700 o VBEsat Ta=25 C —— IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 600 500 400 300 Ta=100 C o 100 Ta=100 C Ta=25 C 30 o o 300 200 10 1 3 10 30 100 200 100 1 3 10 30 COMMON EMITTER IC/IB=20 100 200 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) 100 IC —— VBE VCE=5V Ta=25 C o 10 9 8 7 Cob —— VCB f=1MHz IE=0 Ta=25 C o (mA) (pF) Cob OUTPUT CAPACITANCE 30 6 5 4 COLLCETOR CURRENT IC 10 3 3 1 2 0.3 0.1 0.0 1 0.2 0.4 0.6 0.8 1.0 1 3 10 30 100 BASE-EMMITER VOLTAGE VBE (V) COLLECTOR-BASE VOLTAGE VCB (V) 1000 fT —— IC 300 PC —— Ta (MHz) 300 COLLECTOR POWER DISSIPATION PC (mW) 250 fT 200 TRANSITION FREQUENCY 100 150 100 30 COMMON EMITTER VCE=5V Ta=25 C 10 1 3 10 30 100 o 50 0 0 25 50 75 100 125 150 COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE Ta ( C) o 2 JinYu semiconductor www.htsemi.com Date:2011/ 05