BCX7K

BCX7 0J,K TRANSISTOR (NPN) SOT-23 FEATURES Low current Low voltage 1. BASE 2. EMITTER 3. COLLECTOR MARKING : BCX70J：AJ, BCX70K:AK MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Parameter Value 45 45 5 200 250 150 -55-150 Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE1 DC current gain BCX70J hFE2 hFE3 hFE1 DC current gain BCX70K hFE2 hFE3 Collector-emitter saturation voltage VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VBE Cob NF fT Test IC=10μA,IE=0 IC=2mA,IB=0 IE=1μA,IC=0 VCE=45V,VBE=0 VCE=5V,IC=10μA VCE=5V,IC=2mA VCE=1V,IC=50mA VCE=5V,IC=10μA VCE=5V,IC=2mA VCE=1V,IC=50mA IC= 10mA IB= 0.25 mA IC= 50mA IB=1.25 mA IC= 10mA IB=-0.25 mA IC= 50mA IB= 1.25 mA VCE=5V,IC=2mA VCB=10V,IE=0,f=1MHz VCE=5V,IC=200μA, f=1KHz,BW=200Hz,RS=2KΩ VCE= 5 V, IC=10mA,f =100 MHz 100 250 30 250 90 100 380 100 0.05 0.1 0.6 0.7 0.55 1.7 6 0.35 0.55 0.85 1.05 0.75 V V V V V pF dB MHz 630 460 conditions MIN 45 45 5 20 TYP MAX UNIT V V V nA Base -emitter saturation voltage Base-emitter voltage Collector output capacitance Noise Figure Gain-Bandwidth Product １　 JinYu semiconductor www.htsemi.com BCX7 0J,K Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BCX7 0J,K ３　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５