MMBT2907A

MMBT2907A TRANSISTPR(PNP) SOT-23 FEATURES Epitaxial planar die construction Complementary NPN Type available(MMBT2222A) 1. BASE 2. EMITTER Marking: 2F MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PD RθJA TJ Tstg Parameter Value -60 -60 -5 -600 250 500 150 -55 to +150 Units V V V mA mW ℃/W ℃ ℃ 3. COLLECTOR Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Base cut-off current Collector cut-off current Symbol V(BR)CBO V(BR)CEO* V(BR)EBO ICBO IEBO ICEX hFE(1) hFE(2) DC current gain hFE(3) hFE(4) hFE(5) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay time Rise time Storage time Fall time *Pulse test: tp≤300μS, δ≤0.02. VCE(sat)* VCE(sat)* VBE(sat)* VBE(sat)* fT td tr tS tf VCE=-30V,IC=-150mA,B1=-15mA VCE=-6V,IC=-150mA, IB1=- IB2=- 15mA Test conditions MIN -60 -60 -5 -20 -10 -50 100 75 100 100 50 -0.4 -1.6 -1.3 -2.6 200 10 25 225 60 V V V V MHz nS nS nS nS 300 TYP MAX UNIT V V V nA nA nA IC=-10μA,IE=0 IC=-10mA,IB=0 IE=-10μA,IC=0 VCB=-50V,IE=0 VCE=-3V, IC =0 VCE=-30 V, VBE(off) =-0.5V VCE=-10V,IC=-150mA VCE=-10V,IC=-0.1mA VCE=-10V,IC=-1mA VCE=-10V,IC=-10mA VCE=-10V,IC=-500mA IC=-150mA,IB=-15mA IC=-500mA,IB=-50mA IC=-150mA,IB=-15mA IC=-500mA,IB=-50mA VCE=-20V,IC=-50mA,f=100MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ MMBT2907A Typical Characteristics MMBT2907A ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５