MMBTA28

MMBTA28 TRANSISTOR(NPN) FEATURES  High Current Gain MARKING: 3SS MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 80 80 12 500 200 625 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR SOT–23 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter sustain voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO VCEO(sus) V(BR)EBO ICBO ICES IEBO hFE(1) * hFE(2) * VCE(sat)1* VCE(sat)2* VBE* Cob fT Test conditions Min 80 80 12 0.1 0.5 0.1 10 10 1.2 1.5 2 8 125 Typ Max Unit V V V µA µA µA K K V V V pF MHz IC=100µA, IE=0 IC=100µA, VBE=0 IE=10µA, IC=0 VCB=60V, IE=0 VCE=60V, VBE=0 VEB=10V, IC=0 VCE=5V, IC=10mA VCE=5V, IC=100mA IC=10mA, IB=0.01mA IC=100mA, IB=0.1mA VCE=5V, IC=100mA VCB=1V, IE=0, f=1MHz VCE=5V,IC=10mA, f=100MHz Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency *Pulse test: pulse width ≤300μs,duty cycle≤ 2.0%. １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５