HA92

P N P S I L I C O N T RAN S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HA92 █ HIGH VOLTAGE TRANSISTOR █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） T stg —— St orage Te mp era t ure ……… …………… …… - 55~150 ℃ T j —— Junction Te mp erature ……………………… ………… 150 ℃ PC——Collector Dissipation…………………………………625mW VCBO——Collector-Base Voltage………………………………-300V VCEO——Collector-Emitter Voltage……………………………-300V V EBO —— E m itter - Bas e Vo l t a g e …… …………… …………… -5 V I C ——Co lle cto r C u rre n t…………………………………… -500 mA 1―Emitter，E 2―Base，B 3―Collector， C TO-92 █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter-Base Cut-off Current Collector Cut-off Current Min Typ Max Unit Test Conditions BVCBO BVCEO BVEBO ICBO IEBO ICES HFE（1） HFE（2） HFE（3） VCE(sat1) VCE(sat2) VBE(sat1) -300 -300 -5 -250 -100 -100 25 40 50 V V V nA nA nA IC=-100μA, IE=0 IC=-1mA, IB=0 IE=-100μA，IC=0 VCB=-200V, IE=0 VEB=-3V, IC=0 VCE=-300V, VBE=0 VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-30mA DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain-Bandwidth Product 50 -0.5 -1 -0.9 V V V MHz IC=-20mA, IB=-2mA IC=-60mA, IB=-6mA IC=-20mA, IB=-2mA VCE=-20V, IC=-10mA F=100MHz fT