6116LA15TPG

IDT6116SA IDT6116LA CMOS Static RAM 16K (2K x 8-Bit) Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Description High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.) Low-power consumption Battery backup operation – 2V data retention voltage (LA version only) Produced with advanced CMOS high-performance technology CMOS process virtually eliminates alpha particle soft-error rates Input and output directly TTL-compatible Static operation: no clocks or refresh required Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip, 24-pin SOIC and 24-pin SOJ Military product compliant to MIL-STD-833, Class B The IDT6116SA/LA is a 16,384-bit high-speed static RAM organized as 2K x 8. It is fabricated using IDT's high-performance, high-reliability CMOS technology. Access times as fast as 15ns are available. The circuit also offers a reduced power standby mode. When CS goes HIGH, the circuit will automatically go to, and remain in, a standby power mode, as long as CS remains HIGH. This capability provides significant system level power and cooling savings. The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1µW to 4µW operating off a 2V battery. All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil plastic or ceramic DIP, 24-lead gull-wing SOIC, and 24-lead J-bend SOJ providing high board-level packing densities. Military grade product is manufactured in compliance to the latest version of MIL-STD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability. Functional Block Diagram A0 V CC 128 X 128 MEMORY ARRAY ADDRESS DECODER GND A 10 I/O 0 I/O CONTROL INPUT DATA CIRCUIT I/O 7 , CS OE WE CONTROL CIRCUIT 3089 drw 01 NOVEMBER 2006 1 ©2006 Integrated Device Technology, Inc. DSC-3089/06 IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges Pin Configurations Capacitance (TA = +25°C, f = 1.0 MHZ) Symbol A7 A6 A5 A4 A3 A2 A1 A0 I/O 0 I/O 1 I/O 2 GND 1 2 3 4 5 6 7 8 9 10 11 12 P24-2 P24-1 D24-2 D24-1 SO24-2 SO24-4 24 23 22 21 20 19 18 17 16 15 14 13 VCC A8 A9 WE OE A10 CS I/O 7 I/O 6 I/O 5 I/O 4 I/O3 Parameter(1) Conditions Max. Unit CIN Input Capacitance V IN = 0V 8 pF CI/O I/O Capacitance VOUT = 0V 8 pF 3089 tbl 03 NOTE: 1. This parameter is determined by device characterization, but is not production tested. , Absolute Maximum Ratings(1) 3089 drw 02 Symbol DIP/SOIC/SOJ Top View (2) Pin Description Rating Com'l. Mil. Unit -0.5 to +7.0 -0.5 to +7.0 V VTERM Terminal Voltage with Respect to GND TA Operating Temperature 0 to +70 -55 to +125 o C TBIAS Temperature Under Bias -55 to +125 -65 to +135 o C TSTG Storage Temperature -55 to +125 -65 to +150 o C Name Description A0 - A10 Address Inputs I/O0 - I/O7 Data Input/Output PT Power Dissipation 1.0 1.0 W CS Chip Select IOUT DC Output Current 50 50 mA WE Write Enable OE Output Enable VCC Power GND Ground 3089 tbl 04 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VCC +0.5V. 3089 tbl 01 Truth Table(1) CS OE WE I/O Standby H X X High-Z Read L L H DATAOUT Read L H H High-Z Write L X L DATA IN Mode NOTE: 1. H = VIH, L = VIL, X = Don't Care. 3089 tbl 02 2 IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges Recommended Operating Temperature and Supply Voltage Symbol Ambient Temperature GND Vcc Military -55OC to +125OC 0V 5.0V ± 10% Industrial -40OC to +85OC 0V 5.0V ± 10% 0OC to +70OC 0V 5.0V ± 10% Grade Commercial Recommended DC Operating Conditions Parameter VCC Supply Voltage GND Ground VIH Input High Voltage VIL Min. Typ. 4.5 5.0 0 2.2 (1) Input Low Voltage -0.5 Max. Unit (2) 5.5 V 0 0 V 3.5 VCC +0.5 V ____ 0.8 V 3089 tbl 05 NOTES: 1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle. 2. VIN must not exceed VCC +0.5V. 3089 tbl 06 DC Electrical Characteristics (VCC = 5.0V ± 10%) IDT6116SA Symbol |ILI| |ILO| VOL VOH Parameter Input Leakage Current Output Leakage Current Output Low Voltage Output High Voltage Test Conditions Min. Max. Min. Max. Unit 10 5 ____ 5 2 µA 10 5 ____ ____ 5 2 µA ____ ____ 0.4 ____ 0.4 V 2.4 ____ 2.4 ____ V VCC = Max., VIN = GND to VCC MIL. COM'L. ____ VCC = Max., CS = VIH, VOUT = GND to V CC MIL. COM'L. ____ ____ IOL = 8mA, VCC = Min. IOH = -4mA, VCC = Min. IDT6116LA ____ 3089 tbl 07 DC Electrical Characteristics(1) (VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V) 6116SA15 Symbol ICC1 ICC2 ISB ISB1 6116SA20 6116LA20 6116SA25 6116LA25 6116SA35 6116LA35 Power Com'l Only Com'l & Ind Mil Com'l & Ind Mil Com'l. & Ind. Mil Unit Operating Power Supply Current CS < VIL, Outputs Open V CC = Max., f = 0 SA 105 105 130 100 90 100 90 mA LA 95 95 120 95 85 95 85 Dynamic Operating Current CS < VIL, Outputs Open V CC = Max., f = fMAX(2) SA 150 130 150 120 135 100 115 LA 140 120 140 110 125 95 105 Standby Power Supply Current (TTL Level) CS > VIH, Outputs Open V CC = Max., f = fMAX(2) SA 40 40 50 40 45 25 35 LA 35 35 45 35 40 25 30 Full Standby Power Supply Current (CMOS Level) CS > VHC, VCC = Max., V IN < V LC or VIN > VHC, f = 0 SA 2 2 10 2 10 2 10 LA 0.1 0.1 0.9 0.1 0.9 0.1 0.9 Parameter NOTES: 1. All values are maximum guaranteed values. 2. fMAX = 1/tRC, only address inputs are cycling at fMAX, f = 0 means address inputs are not changing. 6.42 3 mA mA mA 3089 tbl 08 IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges DC Electrical Characteristics(1) (continued) (VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V) 6116SA45 6116LA45 6116SA55 6116LA55 6116SA70 6116LA70 6116SA90 6116LA90 6116SA120 6116LA120 6116SA150 6116LA150 Symbol Parameter Power Com'l & Ind Mil Mil Only Mil Only Mil Only Mil Only Mil Only Unit ICC1 Operating Power Supply Current, CS < VIL, Outputs Open VCC = Max., f = 0 SA 100 90 90 90 90 90 90 mA LA 95 85 85 85 85 85 85 Dynamic Operating Current, CS < VIL, Outputs Open VCC = Max., f = fMAX(2) SA 100 100 100 100 100 100 90 LA 90 95 90 90 85 85 85 Standby Power Supply Current (TTL Level) CS > VIH, Outputs Open VCC = Max., f = fMAX(2) SA 25 25 25 25 25 25 25 LA 20 20 20 20 25 15 15 SA 2 10 10 10 10 10 10 LA 0.1 0.9 0.9 0.9 0.9 0.9 0.9 ICC2 ISB ISB1 Full Standby Power Supply Current (CMOS Level), CS > V HC, VCC = Max., V IN < V LC or VIN > VHC, f = 0 mA mA mA 3089 tbl 09 NOTES: 1. All values are maximum guaranteed values. 2. fMAX = 1/tRC, only address inputs are toggling at fMAX, f = 0 means address inputs are not changing. Data Retention Characteristics Over All Temperature Ranges (LA Version Only) (VLC = 0.2V, VHC = VCC – 0.2V) Typ. (1) VCC @ Symbol Parameter V DR VCC for Data Retention ICCDR Data Retention Current tCDR(3) Chip Deselect to Data Retention Time tR(3) Operation Recovery Time IILII Input Leakage Current Max. VCC @ Test Condition Min. 2.0V 3.0V 2.0V 3.0V Unit ____ 2.0 ____ ____ ____ ____ V ____ 0.5 0.5 1.5 1.5 200 20 300 30 µA ____ 0 ____ ____ ____ ns tRC(2) ____ ____ ____ ____ ns ____ ____ ____ 2 2 µA MIL. COM'L. CS > VHC VIN > VHC or < VLC NOTES: 1. TA = + 25°C 2. tRC = Read Cycle Time. 3. This parameter is guaranteed by device characterization, but is not production tested. 4 ____ 3089 tbl 10 IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges Low VCC Data Retention Waveform DATA RETENTION MODE VCC VDR ≥ 2V 4.5V 4.5V tCDR tR VDR CS , VIH VIH 3089 drw 03 AC Test Conditions Input Pulse Levels GND to 3.0V Input Rise/Fall Times 5ns Input Timing Reference Levels 1.5V Output Reference Levels 1.5V AC Test Load See Figures 1 and 2 3089 tbl 11 5V 5V 480Ω 480Ω DATAOUT DATAOUT 255Ω 255Ω 30pF* 5pF* , 3089 drw 05 3089 drw 04 Figure 1. AC Test Load Figure 2. AC Test Load (for tOLZ, tCLZ, tOHZ , tWHZ, tCHZ & tOW) *Including scope and jig. 6.42 5 , IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges) 6116SA15(1) Symbol Parameter 6116SA20 6116LA20 6116SA25 6116LA25 6116SA35 6116LA35 Min. Max. Min. Max. Min. Max. Min. Max. Unit Read Cycle tRC Read Cycle Time 15 ____ 20 ____ 25 ____ 35 ____ ns tAA Address Access Time ____ 15 ____ 19 ____ 25 ____ 35 ns tACS Chip Select Access Time ____ 15 ____ 20 ____ 25 ____ 35 ns tCLZ(3) Chip Select to Output in Low-Z 5 ____ 5 ____ 5 ____ 5 ____ ns ____ 10 ____ 10 ____ 13 ____ 20 ns tOE Output Enable to Output Valid tOLZ(3) Output Enable to Output in Low-Z 0 ____ 0 ____ 5 ____ 5 ____ ns tCHZ(3) Chip Dese lect to Output in High-Z ____ 10 ____ 11 ____ 12 ____ 15 ns tOHZ(3) Output Disable to Output in High-Z ____ 8 ____ 8 ____ 10 ____ 13 ns 5 ____ 5 ____ 5 ____ ns ns tOH Output Hold from Address Change 5 ____ tPU(3) Chip Select to Power Up Time 0 ____ 0 ____ 0 ____ 0 ____ tPD(3) Chip Desele ct to Power Down Time ____ 15 ____ 20 ____ 25 ____ 35 ns 3089 tbl 12 AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges) (continued) 6116SA45 6116LA45 Symbol Parameter 6116SA55(2) 6116LA55(2) 6116SA70(2) 6116LA70(2) 6116SA90(2) 6116LA90(2) 6116SA120(2) 6116LA120(2) 6116SA150(2) 6116LA150(2) Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit Read Cycle Time 45 ____ 55 ____ 70 ____ 90 ____ 120 ____ 150 ____ ns tAA Address Access Time ____ 45 ____ 55 ____ 70 ____ 90 ____ 120 ____ 150 ns tACS Chip Select Access Time ____ 45 ____ 50 ____ 65 ____ 90 ____ 120 ____ 150 ns tCLZ(3) Chip Select to Output in Low-Z 5 ____ 5 ____ 5 ____ 5 ____ 5 ____ 5 ____ ns ____ 25 ____ 40 ____ 50 ____ 60 ____ 80 ____ 100 ns Read Cycle tRC tOE Output Enable to Output Valid tOLZ(3) Output Enable to Output in Low-Z 5 ____ 5 ____ 5 ____ 5 ____ 5 ____ 5 ____ ns tCHZ(3) Chip Dese lect to Output in High-Z ____ 20 ____ 30 ____ 35 ____ 40 ____ 40 ____ 40 ns tOHZ(3) Output Disable to Output in High-Z ____ 15 ____ 30 ____ 35 ____ 40 ____ 40 ____ 40 ns tOH Output Hold from Address Change 5 ____ 5 ____ 5 ____ 5 ____ 5 ____ 5 ____ NOTES: 1. 0°C to +70°C temperature range only. 2. –55°C to +125°C temperature range only. 3. This parameter guaranteed with the AC Load (Figure 2) by device characterization, but is not production tested. 6 ns 3089 tbl 13 IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges Timing Waveform of Read Cycle No. 1(1,3) tRC ADDRESS tAA tOH OE tOE CS tOLZ (5) tACS tCLZ tCHZ ICC (5) (5) DATA VALID DATAOUT VCC Supply Currents tOHZ (5) tPU ISB , tPD 3089 drw 06 Timing Waveform of Read Cycle No. 2(1,2,4) tRC ADDRESS tAA tOH tOH DATAOUT , DATA VALID PREVIOUS DATA VALID 3089 drw 07 Timing Waveform of Read Cycle No. 3(1,3,4) CS tCLZ (5) tACS tCHZ DATAOUT (5) , DATA VALID 3089 drw 08 NOTES: 1. WE is HIGH for Read cycle. 2. Device is continously selected, CS is LOW. 3. Address valid prior to or coincident with CS transition LOW. 4. OE is LOW. 5. Transition is measured ±500mV from steady state. 6.42 7 IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges) 6116SA15(1) Symbol Parameter 6116SA20 6116LA20 6116SA25 6116LA25 6116SA35 6116LA35 Min. Max. Min. Max. Min. Max. Min. Max. Unit 15 ____ 20 ____ 25 ____ 35 ____ ns 15 ____ 17 ____ 25 ____ ns Write Cycle tWC Write Cycle Time tCW Chip Select to End-of-Write 13 ____ tAW Address Valid to End-of-Write 14 ____ 15 ____ 17 ____ 25 ____ ns tAS Address Set-up Time 0 ____ 0 ____ 0 ____ 0 ____ ns tWP Write Pulse Width 12 ____ 12 ____ 15 ____ 20 ____ ns tWR Write Recovery Time 0 ____ 0 ____ 0 ____ 0 ____ ns 7 ____ 8 ____ 16 ____ 20 ns (3) tWHZ Write to Output in High-Z ____ tDW Data to Write Time Overlap 12 ____ 12 ____ 13 ____ 15 ____ ns tDH(4) Data Hold from Write Time 0 ____ 0 ____ 0 ____ 0 ____ ns tOW(3,4) Output Active from End-of-Write 0 ____ 0 ____ 0 ____ 0 ____ ns 3089 tbl 14 AC Electrical Characteristics (VCC = 5V ± 10%, All Temperature Ranges) (continued) 6116SA45 6116LA45 Symbol Parameter 6116SA55(2) 6116LA55(2) 6116SA70(2) 6116LA70(2) 6116SA90(2) 6116LA90(2) 6116SA120(2) 6116LA120(2) 6116SA150(2) 6116LA150(2) Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit 45 ____ 55 ____ 70 ____ 90 ____ 120 ____ 150 ____ ns 30 ____ 40 ____ 40 ____ 55 ____ 70 ____ 90 ____ ns 30 ____ 45 ____ 65 ____ 80 ____ 105 ____ 120 ____ ns 5 ____ 15 ____ 15 ____ 20 ____ 20 ____ ns Write Cycle tWC tCW tAW Write Cycle Time Chip Select to End-of-Write Address Valid to End-of-Write tAS Address Set-up Time 0 ____ tWP Write Pulse Width 25 ____ 40 ____ 40 ____ 55 ____ 70 ____ 90 ____ ns tWR Write Recovery Time 0 ____ 5 ____ 5 ____ 5 ____ 5 ____ 10 ____ ns tWHZ(3) Write to Output in High-Z ____ 25 ____ 30 ____ 35 ____ 40 ____ 40 ____ 40 ns 25 ____ 30 ____ 30 ____ 35 ____ 40 ____ ns ns tDW Data to Write Time Overlap 20 ____ tDH(4) Data Hold from Write Time 0 ____ 5 ____ 5 ____ 5 ____ 5 ____ 10 ____ tOW(3,4) Output Active from End-of-Write 0 ____ 0 ____ 0 ____ 0 ____ 0 ____ 0 ____ ns 3089 tbl 15 NOTES: 1. 0°C to +70°C temperature range only. 2. –55°C to +125°C temperature range only. 3. This parameter guaranteed with AC Load (Figure 2) by device characterization, but is not production tested. 4. The specification for tDH must be met by the device supplying write data to the RAM under all operation conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW. 8 IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,2,5,7) tWC ADDRESS tAW CS tAS tWP (7) tWR (3) tCHZ (6) WE (6) tWHZ DATAOUT PREVIOUS DATA VALID tOW (4) tDW DATAIN (6) DATA (4) VALID tDH DATA VALID 3089 drw 09 , Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,2,3,5,7) tWC ADDRESS tAW CS tWR (3) tAS tCW WE tDW DATAIN tDH DATA VALID 3089 drw 10 NOTES: 1. WE or CS must be HIGH during all address transitions. 2. A write occurs during the overlap of a LOW CS and a LOW WE. 3. tWR is measured from the earlier of CS or WE going HIGH to the end of the write cycle. 4. During this period, the I/O pins are in the output state and the input signals must not be applied. 5. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high-impedance state. 6. Transition is measured ±500mV from steady state. 7. OE is continuously HIGH. If OE is LOW during a WE controlled write cycle, the write pulse width must be the larger of tWP or (tWHZ + tDW) to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW. If OE is HIGH during a WE controlled write cycle, this requirement does not apply and the write pulse is the specified tWP. For a CS controlled write cycle, OE may be LOW with no degradation to tCW. 6.42 9 , IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges Ordering Information — Military IDT 6116 XX XXX X X Device Type Power Speed Package Process/ Temperature Range B Military (-55°C to +125°C) Compliant to MIL-STD-883, Class B TD D 300 mil CERDIP (D24-1) 600 mil CERDIP (D24-2) 20* 25* 35* 45 55 70 90 120 150** SA LA , Speed in nanoseconds Standard Power Low Power *Available in 300 mil packaging only. **Available in 600 mil packaging only. 3089 drw 11 Ordering Information — Commercial & Industrial IDT 6116 XX XXX X Device Type Power Speed Package X X Process/ Temperature Range Blank Commercial (0°C to +70°C) Industrial (-40°C to +85°C) I G Restricted hazardous substance device TP P SO Y 300 mil Plastic DIP (P24-1) 600 mil Plastic DIP (P24-2) 300 mil Small Outline IC, Gull-Wing Bend (SO24-2) 300 mil SOJ, J-Bend (SO24-4) 15* 20 25 35 45 Speed in nanoseconds SA LA Standard Power Low Power *Available in commercial temperature range and standard power only. 3089 drw 12 10 , IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges Datasheet Document History 1/7/00 Pg. 1, 3, 4, 10 Pg. 9, 10 Pg. 11 08/09/00 02/01/01 12/30/03 03/31/05 11/15/06 Pg. 3,10 Pg. 10 Pg. 3 Pg.4 Updated to new format Added Industrial Temperature range offerings Separated ordering information into military, commercial, and industrial temperature range offerings Added Datasheet Document History Not recommended for new designs Removed "Not recommended for new designs" Corrected Industrial temp from -45C to -40C. Added "Restricted hazardous substance device" to ordering information. Changed power limits for commercial and industrial on speed grades 25ns and 35ns. Changed powe limits for commercial and industrial on speed grade 45ns. Refer to PCN SR-0602-02. CORPORATE HEADQUARTERS 6024 Silver Creek Valley Road San Jose, CA 95138 for SALES: 800-345-7015 or 408-284-8200 fax: 408-284-2775 www.idt.com The IDT logo is a registered trademark of Integrated Device Technology, Inc. 6.42 11 for Tech Support: ipchelp@idt.com 800-345-7015