IDT7130SA

HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM Integrated Device Technology, Inc. IDT7130SA/LA IDT7140SA/LA FEATURES • High-speed access —Military: 25/35/55/100ns (max.) —Commercial: 25/35/55/100ns (max.) —Commercial: 20ns 7130 in PLCC and TQFP • Low-power operation —IDT7130/IDT7140SA —Active: 550mW (typ.) —Standby: 5mW (typ.) —IDT7130/IDT7140LA —Active: 550mW (typ.) —Standby: 1mW (typ.) • MASTER IDT7130 easily expands data bus width to 16-or-more-bits using SLAVE IDT7140 • On-chip port arbitration logic (IDT7130 Only) • BUSY output flag on IDT7130; BUSY input on IDT7140 • Interrupt flags for port-to-port communication • Fully asynchronous operation from either port • Battery backup operation–2V data retention (LA only) • TTL-compatible, single 5V ±10% power supply • Military product compliant to MIL-STD-883, Class B • Standard Military Drawing #5962-86875 • Industrial temperature range (–40°C to +85°C) is available, tested to military electrical specifications DESCRIPTION The IDT7130/IDT7140 are high-speed 1K x 8 Dual-Port Static RAMs. The IDT7130 is designed to be used as a stand-alone 8-bit Dual-Port RAM or as a "MASTER" DualPort RAM together with the IDT7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 16-or-more-bit memory system applications results in full-speed, error-free operation without the need for additional discrete logic. Both devices provide two independent ports with separate control, address, and I/O pins that permit independent asynchronous access for reads or writes to any location in memory. An automatic power down feature, controlled by CE, permits the on chip circuitry of each port to enter a very low standby power mode. Fabricated using IDT's CMOS high-performance technology, these devices typically operate on only 550mW of power. Low-power (LA) versions offer battery backup data retention capability, with each Dual-Port typically consuming 200µW from a 2V battery. The IDT7130/IDT7140 devices are packaged in 48-pin sidebraze or plastic DIPs, LCCs, or flatpacks, 52-pin PLCC, and 64-pin TQFP and STQFP. Military grade product is manufactured in compliance with the latest revision of MILSTD-883, Class B, making it ideally suited to military temperature applications demanding the highest level of performance and reliability. FUNCTIONAL BLOCK DIAGRAM OEL CEL R/WL OER R/WR CER I/O0L- I/O7L I/O Control I/O Control I/O0R-I/O7R BUSYL (1,2) BUSYR Address Decoder 10 (1,2) A9L A0L MEMORY ARRAY Address Decoder A9R A0R 10 NOTES: 1. IDT7130 (MASTER): BUSY is open drain output and requires pullup resistor of 270Ω. IDT7140 (SLAVE): BUSY is input. 2. Open drain output: requires pullup resistor of 270Ω. CEL OEL R/WL ARBITRATION and INTERRUPT LOGIC CER OER R/WR INTL (2) The IDT logo is a registered trademark of Integrated Device Technology, Inc. INTR 2689 drw 01 (2) MILITARY AND COMMERCIAL TEMPERATURE RANGES ©1996 Integrated Device Technology, Inc. For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391. OCTOBER 1996 DSC-2689/7 6.01 1 IDT7130SA/LA AND IDT7140SA/LA HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS MILITARY AND COMMERCIAL TEMPERATURE RANGES PIN CONFIGURATIONS (1,2) R/ BUSYL R/ INTL A0L A1L A2L A3L A4L A5L A6L A7L A8L A9L I/O0L I/O1L I/O2L I/O3L I/O4L I/O5L I/O6L I/O7L GND OEL BUSYR INTR 76 A1L A2L A3L A4L A5L A6L A7L A8L A9L I/O0L I/O1L I/O2L I/O3L 8 9 10 11 12 13 14 15 16 17 18 19 20 54 32 A0R A1R A2R A3R A4R A5R A6R A7R A8R A9R I/O7R I/O6R I/O5R I/O4R I/O3R I/O2R I/O1R I/O0R 2689 drw 02 OER 1 52 51 50 49 48 47 46 45 44 43 R/ R/ WL 1 48 2 47 3 46 4 45 5 44 6 43 7 42 8 IDT7130/ 41 9 IDT7140 40 10 P48-1 39 & 11 C48-2 38 12 37 13 DIP 36 TOP 14 VIEW (3) 35 15 34 16 33 17 32 18 31 19 30 20 29 21 28 22 27 23 26 24 25 CER WR WL INTL CER OEL CEL INTR VCC WR INDEX N/C N/C A0L VCC BUSYL BUSYR CEL OER A0R A1R A2R A3R A4R A5R A6R A7R A8R A9R N/C I/O7R 2689 drw 04 IDT7130/40 J52-1 52-PIN PLCC TOP VIEW (3) 42 41 40 39 38 37 36 35 34 21 22 23 24 25 26 27 28 29 30 31 32 33 I/O4L I/O5L I/O6L I/O7L N/C GND I/O0R I/O1R I/O2R I/O3R I/O4R I/O5R INTR BUSYR BUSYL BUSYL INTL INTR VCC VCC CER BUSYR WR CE L WL WR WL INTL VCC CEL CER OER OEL A0L N/C N/C N/C R/ R/ R/ INDEX INDEX A1L A2L A3L A4L A5L A6L A7L A8L A9L I/O0L I/O1L I/O2L 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 65432 48 47 46 45 44 43 1 7 42 8 41 9 40 10 39 IDT7130/40 L48-1 11 38 & 12 37 F48-1 13 36 48-PIN LCC/ FLATPACK 14 35 TOP VIEW (3) 15 34 16 33 17 32 18 31 19 20 21 22 23 24 25 26 27 28 29 30 A0R A1R A2R A3R A4R A5R A6R A7R A8R A9R I/O7R I/O6R OEL A0L A1L A2L A3L A4L A5L A6L N/C A7L A8L A9L N/C I/O0L I/O1L I/O2L 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 R/ N/C N/C N/C I/O6R 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 IDT7130/40 PP64-1 & PN64-1 64-PIN STQFP 64-PIN TQFP TOP VIEW (3) 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 OER A0R A1R A2R A3R A4R A5R A6R N/C A7R A8R A9R N/C N/C I/O7R I/O6R I/O3L I/O4L I/O5L I/O6L I/O7L GND I/O0R I/O1R I/O2R I/O3R I/O4R I/O5R NOTES: 1. All Vcc pins must be connected to the power supply. 2. All GND pins must be connected to the ground supply. 3. This text does not indicate orientation of the actual part-marking. 6.01 I/O3L N/C I/O4L I/O5L I/O6L I/O7L N/C GND GND I/O0R I/O1R I/O2R I/O3R N/C I/O4R I/O5R 2689 drw 03 2689 drw 05 2 IDT7130SA/LA AND IDT7140SA/LA HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS MILITARY AND COMMERCIAL TEMPERATURE RANGES ABSOLUTE MAXIMUM RATINGS(1) Symbol Rating Commercial –0.5 to +7.0 Military –0.5 to +7.0 Unit V VTERM(2) Terminal Voltage with Respect to GND Operating TA Temperature Temperature TBIAS Under Bias Storage TSTG Temperature IOUT DC Output Current RECOMMENDED DC OPERATING CONDITIONS Symbol VCC GND VIH VIL Parameter Supply Voltage Supply Voltage Input High Voltage Input Low Voltage Min. 4.5 0 2.2 –0.5 (1) Typ. 5.0 0 — — Max. 5.5 0 6.0(2) 0.8 Unit V V V V 2689 tbl 02 0 to +70 –55 to +125 –55 to +125 50 –55 to +125 –65 to +135 –65 to +150 50 °C °C °C mA 2689 tbl 01 NOTES: 1. VIL (min.) > -1.5V for pulse width less than 10ns. 2. VTERM must not exceed Vcc + 0.5V. NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed Vcc + 0.5 for more than 25% of the cycle time or 10ns maximum, and is limited to < 20mA for the period of VTERM > Vcc + 0.5V. RECOMMENDED OPERATING TEMPERATURE AND SUPPLY VOLTAGE Grade Military Commercial Ambient Temperature –55°C to +125°C 0°C to +70°C GND 0V 0V VCC 5.0V ± 10% 5.0V ± 10% 2689 tbl 03 DC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE (VCC = 5.0V ± 10%) 7130SA Symbol |lLl| |lLO| VOL VOL VOH Parameter Input Leakage Current(1) Output Leakage Current(1) Output Low Voltage (l/O0-l/O7) Open Drain Output Low Voltage (BUSY, INT) Output High Voltage Test Conditions VCC = 5.5V, VIN = 0V to VCCIN = GND to VCC VCC = 5.5V, CE = VIH, VOUT = 0V to VCCC lOL = 4mA lOL= 16mA lOL = 16mA lOH = -4mA 7140SA Min. Max. — — — — 2.4 10 10 0.4 0.5 — 7130LA 7140LA Max. Max. — — — — 2.4 5 5 0.4 0.5 — Unit µA µA V V V 2689 tbl 04 NOTE: 1. At Vcc < 2.0V leakages are undefined. CAPACITANCE(1) Symbol (TA = +25°C, f = 1.0MHz) TQFP ONLY(3) CIN COUT Parameter Input Capacitance Output Capacitance Conditions(2) VIN = 3dV VIN = 3dV Max. Unit 9 pF 10 pF 2689 tbl 05 NOTES: 1. This parameter is determined by device characterization but is not production tested. 2. 3dv references the interpolated capacitance when the input and output signals switch from 0V to 3V or from 3V to 0V. 3. 11pF max. for other packages. 6.01 3 IDT7130SA/LA AND IDT7140SA/LA HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS MILITARY AND COMMERCIAL TEMPERATURE RANGES DC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(1,6) (VCC = 5.0V ± 10%) 7130X20(2) 7130X25(3) 7130X35 7130X55 7130X100 7140X25(3) 7140X35 7140X55 7140X100 Typ. Max. Typ. Max. Typ. Max. Typ. Max. Typ. Max. Unit — — 110 280 — — 110 220 110 250 110 220 110 200 110 170 — — 30 30 — — 65 65 — — 1.0 0.2 — — 60 60 — — 65 45 — — 165 125 — — 15 5 — — 155 115 30 30 30 30 65 65 65 65 1.0 0.2 1.0 0.2 60 60 60 60 80 60 65 45 160 125 150 115 30 10 15 5 155 115 145 105 110 230 110 170 110 165 110 120 25 25 25 25 50 50 50 50 1.0 0.2 1.0 0.2 45 45 45 45 80 60 65 45 150 115 125 90 30 10 15 4 145 105 110 85 110 110 110 110 20 20 20 20 190 140 155 110 65 45 65 35 110 110 110 110 20 20 20 20 40 40 40 40 1.0 0.2 1.0 0.2 40 40 40 40 190 140 155 110 65 45 55 35 125 90 110 75 30 10 15 4 110 80 95 70 mA Symbol ICC Parameter Dynamic Operating Current (Both Ports Active) Standby Current (Both Ports - TTL Level Inputs) Standby Current (One Port - TTL Level Inputs) Full Standby Current (Both Ports - All CMOS Level Inputs Full Standby Current (One Port - All CMOS Level Inputs) Test Conditions Version CEL and CER = VIL, MIL. SA Outputs open, LA COM'L. SA f = fMAX(4) LA CEL and CER = VIH, MIL. SA f = fMAX(4) LA COM'L. SA LA SA LA Active Port Outputs COM'L. SA LA Open, f = fMAX(4) ISB1 mA ISB2 CE"A" = VIL and CE"B" = VIH (7) MIL. 40 125 40 90 40 110 40 75 1.0 0.2 1.0 0.2 30 10 15 4 mA ISB3 CEL and CER > VCC -0.2V, VIN > VCC -0.2V or VIN < 0.2V,f = 0(5) SA LA COM'L. SA LA SA LA COM'L. SA LA MIL. MIL. mA ISB4 CE"A" < 0.2V and CE"B" > VCC -0.2V(7) VIN > VCC -0.2V or VIN < 0.2V, Active Port Outputs Open, f = fMAX(4) 40 110 40 85 40 100 40 70 mA NOTES: 2689 tbl 06 1. 'X' in part numbers indicates power rating (SA or LA). 2. Com'l Only, 0°C to +70°C temperature range. PLCC and TQFP packages. 3. Not available in DIP packages. 4. At f = fMax, address and control lines (except Output Enable) are cycling at the maximum frequency read cycle of 1/tRC, and using “AC TEST CONDITIONS” of input levels of GND to 3V. 5. f = 0 means no address or control lines change. Applies only to inputs at CMOS level standby. 6. Vcc = 5V, TA=+25°C for Typ and is not production tested. Vcc DC = 100 mA (Typ.) 7. Port "A" may be either left or right port. Port "B" is opposite from port "A". DATA RETENTION CHARACTERISTICS (LA Version Only) Symbol VDR ICCDR tCDR(3) tR(3) Parameter VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time NOTES: 1. VCC = 2V, TA = +25°C, and is not production tested. 2. tRC = Read Cycle Time 3. This parameter is guaranteed but not production tested. 2689 tbl 07 Test Conditions Mil. Com’l. lDT7130LA/IDT7140LA Min. Typ.(1) Max. 2.0 — 100 100 — — — 4000 1500 — — — — 0 tRC(2) Unit V µA µA ns ns VCC = 2.0V, CE > VCC -0.2V VIN > VCC -0.2V or VIN < 0.2V 6.01 4 IDT7130SA/LA AND IDT7140SA/LA HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS MILITARY AND COMMERCIAL TEMPERATURE RANGES DATA RETENTION WAVEFORM DATA RETENTION MODE VCC 4.5V tCDR VDR ≥ 2.0V 4.5V tR CE VDR VIH VIH 2692 drw 06 AC TEST CONDITIONS Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load GND to 3.0V 5ns 1.5V 1.5V Figures 1, 2, and 3 2689 tbl 08 5V 1250Ω DATA OUT 775Ω 30pF* (*100pF for 55 and 100ns versions) DATA OUT 775Ω 5V 1250Ω 5pF* Figure 1. Output Test Load Figure 2. Output Test Load (for tHZ, tLZ, tWZ, and tOW) * including scope and jig 5V 270Ω BUSY or INT 30pF* *100pF for 55 and 100ns versions 2689 drw 07 Figure 3. BUSY and INT BUSY INT AC Output Test Load 6.01 5 IDT7130SA/LA AND IDT7140SA/LA HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS MILITARY AND COMMERCIAL TEMPERATURE RANGES AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(3) Symbol Read Cycle tRC tAA tACE tAOE tOH tLZ tHZ tPU tPD Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Output Hold From Address Change Output Low-Z Time(1,4) Output High-Z Time(1,4) Chip Enable to Power Up Time(4) Chip Disable to Power Down Time(4) 20 — — 3 0 — 0 — — 20 20 11 — — 10 — 20 25 — — — 3 0 — 0 — — 25 25 12 — — 10 — 25 35 — — — 3 0 — 0 — — 35 35 20 — — 15 — 35 55 — — — 3 5 — 0 — — 55 55 25 — — 25 — 50 100 — — — 10 5 — 0 — — 100 100 40 — — 40 — 50 ns ns ns ns ns ns ns ns ns Parameter 7130X20(2) 7130X25(5) 7130X35 7130X55 7130X100 7140X25(5) 7140X35 7140X55 7140X100 Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit NOTES: 1. Transition is measured ±500mV from Low or High-impedance voltage Output Test Load (Figure 2). 2. Com'l Only, 0°C to +70°C temperature range. PLCC and TQFP package. 3. “X” in part numbers indicates power rating (SA or LA). 4. This parameter is guaranteed by device characterization, but is not production tested. 5. Not available in DIP packages. 2689 tbl 09 TIMING WAVEFORM OF READ CYCLE NO. 1, EITHER SIDE(1) tRC ADDRESS tAA tOH DATAOUT PREVIOUS DATA VALID DATA VALID tOH BUSYOUT tBDD (2,3) NOTES: 1. R/W = VIH, CE = VIL, and is OE = VIL. Address is valid prior to the coincidental with CE transition Low. 2. tBDD delay is required only in the case where the opposite port is completing a write operation to the same the address location. For simultaneous read operations, BUSY has no relationship to valid output data. 3. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD. 2689 drw 08 6.01 6 IDT7130SA/LA AND IDT7140SA/LA HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS MILITARY AND COMMERCIAL TEMPERATURE RANGES TIMING WAVEFORM OF READ CYCLE NO. 2, EITHER SIDE(3) tACE tAOE (4) tHZ (2) tLZ DATAOUT tLZ ICC CURRENT ISS tPU 50% (1) (1) tHZ VALID DATA tPD (4) (2) 50% 2689 drw 09 NOTES: 1. Timing depends on which signal is asserted last, OE or CE. 2. Timing depends on which signal is deaserted first, OE or CE. 3. R/W = VIH and the address is valid prior to or coincidental with CE transition Low. 4. Start of valid data depends on which timing becomes effective last tAOE, tACE, tAA, and tBDD. AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(5) 7130X20(2) 7130X25(6) Symbol Parameter Write Cycle Write Cycle Time(3) tWC tEW Chip Enable to End-of-Write Address Valid to End-of-Write tAW tAS Address Set-up Time Write Pulse Width(4) tWP tWR Write Recovery Time Data Valid to End-of-Write tDW tHZ Output High-Z Time(1) Data Hold Time tDH tWZ Write Enabled to Output in High-Z(1) Output Active From End-of-Write(1) tOW Min. 20 15 15 0 15 0 10 — 0 — 0 Max. — — — — — — — 10 — 10 — 7140X25 Min. Max. 25 20 20 0 15 0 12 — 0 — 0 — — — — — — — 10 — 10 — (6) 7130X35 7130X55 7130X100 7140X100 Min. Max. 100 90 90 0 55 0 40 — 0 — 0 — — — — — — — 40 — 40 — Unit ns ns ns ns ns ns ns ns ns ns ns 7140X35 7140X55 Min. Max. Min. Max. 35 30 30 0 25 0 15 — 0 — 0 — — — — — — — 15 — 15 — 55 40 40 0 30 0 20 — 0 — 0 — — — — — — — 25 — 25 — NOTES: 2689 tbl 10 1. Transition is measured ±500mV from Low or High-impedance voltage with Output Test Load (Figure 2). This parameter is guaranteed by device characterization but is not production tested. 2. 0°C to +70°C temperature range only, PLCC and TQFP packages. 3. For MASTER/SLAVE combination, tWC = tBAA + tWP, since R/W = VIL must occur after tBAA. 4. If OE is low during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off data to be placed on the bus for the required tDW. If OE is High during a R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP. 5. “X” in part numbers indicates power rating (SA or LA). 6. Not available in DIP packages. 6.01 7 IDT7130SA/LA AND IDT7140SA/LA HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS MILITARY AND COMMERCIAL TEMPERATURE RANGES TIMING WAVEFORM OF WRITE CYCLE NO. 1, (R/W CONTROLLED TIMING)(1,5,8) tWC ADDRESS tHZ (7) OE tAW CE tAS(6) R/ tWP(2) tWR (3) (7) tHZ W tWZ (7) tOW (4) (4) DATA OUT tDW DATA IN tDH 2689 drw 10 TIMING WAVEFORM OF WRITE CYCLE NO. 2, (CE CONTROLLED TIMING)(1,5) tWC ADDRESS tAW CE tAS(6) R/ tEW (2) W tDW tWR (3) tDH DATA IN 2689 drw 11 NOTES: 1. R/W or CE must be High during all address transitions. 2. A write occurs during the overlap (tEW or tWP) of CE = VIL and R/W = VIL. 3. tWR is measured from the earlier of CE or R/W going High to the end of the write cycle. 4. During this period, the l/O pins are in the output state and input signals must not be applied. 5. If the CE Low transition occurs simultaneously with or after the R/W Low transition, the outputs remain in the High-impedance state. 6. Timing depends on which enable signal (CE or R/W) is asserted last. 7. This parameter is determined be device characterization, but is not production tested. Transition is measured +/- 500mV from steady state with the Output Test Load (Figure 2). 8. If OE is low during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW. If OE is High during a R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP. 6.01 8 IDT7130SA/LA AND IDT7140SA/LA HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS MILITARY AND COMMERCIAL TEMPERATURE RANGES AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(7)8M824S258M824S30 7130X20(1) Symbol Parameter Min. Max. — — — — 12 — — 5 — 5 0 12 — — 20 20 20 20 — 40 30 — 25 — — — 40 30 7130X25(9) 7130X35 7130X55 7140X25(9) 7140X35 Min. Max. Min. Max. — — — — 15 — — 5 — 5 0 15 — — 20 20 20 20 — 50 35 — 35 — — — 50 35 — — — — 20 — — 5 — 5 0 20 — — 20 20 20 20 — 60 35 — 35 — — — 60 35 7132158M824S4 7130X100 Unit ns ns ns ns ns ns ns ns ns ns ns ns ns 7140X55 7140X100 Min. Max. Min. Max. — — — — 20 — — 5 — 5 0 20 — — 30 30 30 30 — 80 55 — 50 — — — 80 55 — — — — 20 — — 5 — 5 0 20 — — 50 50 50 50 — 120 100 — 65 — — 120 100 Busy Timing (For Master lDT7130 Only) BUSY Access Time from Address tBAA tBDA tBAC tBDC tWH tWDD tDDD tAPS BUSY Disable Time from Address BUSY Access Time from Chip Enable BUSY Disable Time from Chip Enable Write Hold After BUSY(6) Write Pulse to Data Delay(2) Write Data Valid to Read Data Delay(2) Arbitration Priority Set-up Time(3) tBDD BUSY Disable to Valid Data(4) Busy Timing (For Slave IDT7140 Only)e tWB tWH tWDD tDDD Write to BUSY Input(5) Write Hold After BUSY(6) Write Pulse to Data Delay(2) Write Data Valid to Read Data Delay(2) NOTES: 2689 tbl 11 1. Com'l Only, 0°C to +70°C temperature range. PLCC and TQFP packages only. 2. Port-to-port delay through RAM cells from the writing port to the reading port, refer to “Timing Waveform of Write with Port-to-Port Read and BUSY." 3. To ensure that the earlier of the two ports wins. 4. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual), or tDDD – tDW (actual). 5. To ensure that a write cycle is inhibited on port 'B' during contention on port 'A'. 6. To ensure that a write cycle is completed on port 'B' after contention on port 'A'. 7. “X” in part numbers indicates power rating (SA or LA). 8. Not available in DIP packages. TIMING WAVEFORM OF WRITE WITH PORT-TO-PORT READ AND BUSY (2,3,4) BUSY tWC ADDR’A’ MATCH tWP R/ W’A’ tDW tDH VALID tAPS (1) DATAIN’A’ ADDR’B’ MATCH t BDA tBDD BUSY’B’ tWDD DATAOUT’B’ NOTES: 1. To ensure that the earlier of the two ports wins. tBDD is ignored for slave (IDT7140). 2. CEL = CER = VIL. 3. OE = VIL for the reading port. 4. All timing is the same for the left and right ports. Port 'A' may be either the left or right port. Port "B" is opposite from port "A". VALID tDDD 2689 drw 12 6.01 9 IDT7130SA/LA AND IDT7140SA/LA HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS MILITARY AND COMMERCIAL TEMPERATURE RANGES TIMING WAVEFORM OF WRITE WITH BUSY(3) BUSY tWP R/ W 'A' tWB BUSY'B' R/ W tWH(1) (2) 'B' 2689 drw 13 NOTES: 1. tWH must be met for both BUSY Input (IDT7140, slave) or Output (IDT7130 master). 2. BUSY is asserted on port 'B' blocking R/W'B', until BUSY'B' goes High. 3. All timing is the same for the left and right ports. Port 'A' may be either the left or right port. Port "B" is opposite from port "A". TIMING WAVEFORM OF BUSY ARBITRATION CONTROLLED BY CE TIMING (1) CE ADDR 'A' AND 'B' ADDRESSES MATCH CE'B' CE'A' BUSY'A' 2689 drw 14 tAPS (2) tBAC tBDC TIMING WAVEFORM OF BUSY ARBITRATION CONTROLLED BY ADDRESS MATCH TIMING (1) tRC OR tWC ADDR'A' (2) ADDRESSES MATCH tAPS ADDRESSES DO NOT MATCH ADDR'B' tBAA tBDA BUSY'B' 2689 drw 15 NOTES: 1. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”. 2. If tAPS is not satisified, the BUSY will be asserted on one side or the other, but there is no guarantee on which side BUSY will be asserted (7130 only). 6.01 10 IDT7130SA/LA AND IDT7140SA/LA HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS MILITARY AND COMMERCIAL TEMPERATURE RANGES AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(2) 7130X20(1) Symbol Parameter Interrupt Timing Address Set-up Time tAS tWR Write Recovery Time Interrupt Set Time tINS tINR Interrupt Reset Time Min. 0 0 — — Max. — — 20 20 7130X25(3) 7140X25(3) Min. Max. 0 0 — — — — 25 25 7130X35 7140X35 Min. Max. 0 0 — — — — 25 25 8M824S25 7130X55 7140X55 Min. Max. 0 0 — — — — 45 45 8M824S308M824S35 7130X100 7140X100 Min. Max. Unit 0 0 — — — — 60 60 ns ns ns ns 2689 tbl 12 NOTES: 1. 0°C to +70°C temperature range only, PLCC and TQFP packages. 2. “X” in part numbers indicates power rating (SA or LA). 3. Not available in DIP packages . TIMING WAVEFORM OF INTERRUPT MODE INT SET: tWC ADDR'A' INTERRUPT ADDRESS tAS (3) R/ (2) (4) tWR W'A' tINS (3) INT'B' INT CLEAR: INT tRC ADDR'B' tAS INTERRUPT CLEAR ADDRESS (3) 2689 drw 16 OE'B' tINR INT'B' (3) 2689 drw 17 NOTES:. 1. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”. 2. See Interrupt Truth Table. 3. Timing depends on which enable signal (CE or R/W) is asserted last. 4. Timing depends on which enable signal (CE or R/W) is de-asserted first. 6.01 11 IDT7130SA/LA AND IDT7140SA/LA HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS MILITARY AND COMMERCIAL TEMPERATURE RANGES TRUTH TABLES TABLE I — NON-CONTENTION READ/WRITE CONTROL(4) Left or Right Port(1) R/ D0–7 CE OE X H X Z W X L H H H L L L X X L H Z DATAIN DATAOUT Z Function Port Disabled and in PowerDown Mode, ISB2 or ISB4 CER = CEL = VIH, Power-Down Mode, ISB1 or ISB3 Data on Port Written Into Memory(2) Data in Memory Output on Port(3) High Impedance Outputs NOTES: 2689 tbl 13 1. A0L – A10L ≠ A0R – A10R. 2. If BUSY = L, data is not written. 3. If BUSY = L, data may not be valid, see tWDD and tDDD timing. 4. 'H' = VIH, 'L' = VIL, 'X' = DON’T CARE, 'Z' = HIGH IMPEDANCE TABLE II — INTERRUPT FLAG(1,4) R/WL L X X X CEL L X X L Left Port OEL X X X L A9L – A0L 3FF X X 3FE INTL X X L(3) H(2) R/WR X X L X CER X L L X Right Port OER X L X X A9L – A0R X 3FF 3FE X INTR L(2) H(3) X X Function Set Right INTR Flag Reset Right INTR Flag Set Left INTL Flag Reset Left INTL Flag 2689 tbl 14 NOTES: 1. Assumes BUSYL = BUSYR = VIH 2. If BUSYL = VIL, then No Change. 3. If BUSYR = VIL, then No Change. 4. 'H' = HIGH,' L' = LOW,' X' = DON’T CARE TABLE III — ADDRESS BUSY ARBITRATION Inputs Outputs CEL X H X L CER X X H L A0L-A9L A0R-A9R NO MATCH MATCH MATCH MATCH BUSYL(1) BUSYR(1) H H H (2) H H H (2) Function Normal Normal Normal Write Inhibit(3) NOTES: 2689 tbl 15 1. Pins BUSYL and BUSYR are both outputs for IDT7130 (master). Both are inputs for IDT7140 (slave). BUSYX outputs on the IDT7130 are open drain, not push-pull outputs. On slaves the BUSYX input internally inhibits writes. 2. 'L' if the inputs to the opposite port were stable prior to the address and enable inputs of this port. 'H' if the inputs to the opposite port became stable after the address and enable inputs of this port. If tAPS is not met, either BUSYL or BUSYR = Low will result. BUSYL and BUSYR outputs can not be low simultaneously. 3. Writes to the left port are internally ignored when BUSYL outputs are driving Low regardless of actual logic level on the pin. Writes to the right port are internally ignored when BUSYR outputs are driving Low regardless of actual logic level on the pin. 6.01 12 IDT7130SA/LA AND IDT7140SA/LA HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS MILITARY AND COMMERCIAL TEMPERATURE RANGES FUNCTIONAL DESCRIPTION The IDT7130/IDT7140 provides two ports with separate control, address and I/O pins that permit independent access for reads or writes to any location in memory. The IDT7130/ IDT7140 has an automatic power down feature controlled by CE. The CE controls on-chip power down circuitry that permits the respective port to go into a standby mode when not selected (CE = VIH). When a port is enabled, access to the entire memory array is permitted. The Busy outputs on the IDT7130 RAM (Master) are open drain type outputs and require open drain resistors to operate. If these RAMs are being expanded in depth, then the Busy indication for the resulting array does not require the use of an external AND gate. WIDTH EXPANSION WITH BUSY LOGIC MASTER/SLAVE ARRAYS When expanding an RAM array in width while using busy logic, one master part is used to decide which side of the RAM array will receive a busy indication, and to output that indication. Any number of slaves to be addressed in the same address range as the master, use the busy signal as a write inhibit signal. Thus on the IDT7130/IDT7140 RAMs the Busy pin is an output if the part is Master (IDT7130), and the Busy pin is an input if the part is a Slave (IDT7140) as shown in Figure 4. 5V INTERRUPTS If the user chooses to use the interrupt function, a memory location (mail box or message center) is assigned to each port. The left port interrupt flag (INTL) is asserted when the right port writes to memory location 3FE (HEX), where a write is defined as the CE = R/W = VIL per the Truth Table. The left port clears the interrupt by access address location 3FE access when CER = OER = VIL, R/W is a "don't care". Likewise, the right port interrupt flag (INTR) is asserted when the left port writes to memory location 3FF (HEX) and to clear the interrupt flag (INTR), the right port must access the memory location 3FF. The message (8 bits) at 3FE or 3FF is user-defined, since it is an addressable SRAM location. If the interrupt function is not used, address locations 3FE and 3FF are not used as mail boxes, but as part of the random access memory. Refer to Table II for the interrupt operation. 270Ω MASTER Dual Port RAM BUSY (L) CE BUSY (R) SLAVE Dual Port RAM BUSY (L) CE BUSY (R) DECODER 5V 270Ω MASTER Dual Port RAM BUSY (L) CE BUSY (R) SLAVE Dual Port RAM BUSY (L) CE BUSY (R) BUSYR 2689 drw 18 BUSY LOGIC Busy Logic provides a hardware indication that both ports of the RAM have accessed the same location at the same time. It also allows one of the two accesses to proceed and signals the other side that the RAM is “Busy”. The Busy pin can then be used to stall the access until the operation on the other side is completed. If a write operation has been attempted from the side that receives a busy indication, the write signal is gated internally to prevent the write from proceeding. The use of busy logic is not required or desirable for all applications. In some cases it may be useful to logically OR the busy outputs together and use any busy indication as an interrupt source to flag the event of an illegal or illogical operation. In slave mode the BUSY pin operates solely as a write inhibit input pin. Normal operation can be programmed by tying the BUSY pins High. If desired, unintended write operations can be prevented to a port by tying the Busy pin for that port Low. BUSYL Figure 4. Busy and chip enable routing for both width and depth expansion with IDT7130 (Master) and IDT7140 (Slave) RAMs. If two or more master parts were used when expanding in width, a split decision could result with one master indicating busy on one side of the array and another master indicating busy on one other side of the array. This would inhibit the write operations from one port for part of a word and inhibit the write operations from the other port for the other part of the word. The Busy arbitration, on a Master, is based on the chip enable and address signals only. It ignores whether an access is a read or write. In a master/slave array, both address and chip enable must be valid long enough for a busy flag to be output from the master before the actual write pulse can be initiated with either the R/W signal or the byte enables. Failure to observe this timing can result in a glitched internal write inhibit signal and corrupted data in the slave. 6.01 13 IDT7130SA/LA AND IDT7140SA/LA HIGH-SPEED 1K x 8 DUAL-PORT STATIC RAM WITH INTERRUPTS MILITARY AND COMMERCIAL TEMPERATURE RANGES ORDERING INFORMATION IDT XXXX A Device Type Power 999 Speed A Package A Process/ Temperature Range Blank B Commercial (0°C to +70°C) Military (–55°C to +125°C) Compliant to MIL-STD-883, Class B 48-pin Plastic DIP (P48-1) 48-pin Sidebraze DIP (C48-2) 52-pin PLCC (J52-1) 48-pin LCC (L48-1) 48-pin Ceramic Flatpack (F48-1) 64-pin TQFP (PN64-1) 64-pin STQFP (PP64-1) Commercial PLCC and TQFP Only LCC, PLCC, and TQFP Only P C J L48 F PF TF 20 25 35 55 100 Speed in nanoseconds LA SA 7130 7140 Low Power Standard Power 8K (1K x 8-Bit) MASTER Dual-Port RAM 8K (1K x 8-Bit) SLAVE Dual-Port RAM 2689 drw 19 6.01 14