BC857S

BC857S PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with good matching in one package 4 5 6



2 1 C1 6 B2 5 E2 4 3 VPS05604 TR2 TR1 1 E1 2 B1 3 C2 EHA07175 Type BC857S Maximum Ratings Parameter Marking 3Cs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg Value 45 50 50 5 100 200 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, TS = 115 °C Junction temperature Storage temperature mA mW °C Thermal Resistance Junction - soldering point1) RthJS
140 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BC857S Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics per Transistor Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C DC current gain 1) IC = 10 µA, VCE = 5 V IC = 2 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage 1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage 1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(ON) VBEsat VCEsat hFE ICBO ICBO V(BR)EBO V(BR)CES V(BR)CBO V(BR)CEO Symbol min. Values typ. max. Unit 45 50 50 5 - - 15 5 V nA µA - 200 600 - 250 290 75 250 700 850 650 - 630 mV 300 650 V 750 820 1) Pulse test: t < 300 s; D < 2%
2 Nov-29-2001 BC857S Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf.ratio IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 200 µA, VCE = 5 V, RS = 2 k , F f = 200 Hz 10 Open-circuit output admittance h21e h22e 330 30 S h12e 2 Short-circuit input impedance Ceb h11e 10 4.5 k Ccb 3 pF fT 250 MHz Symbol min. Values typ. max. Unit 10-4 dB  f = 1 kHz, 3 Nov-29-2001

BC857S Total power dissipation Ptot = f (TS ) 300 mW Ptot 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax / PtotDC = f (tp) 10 3 K/W 10 3 Ptotmax / PtotDC - 10 2 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Nov-29-2001 BC857S Transition frequency fT = f (IC) VCE = 5V 10 3 MHz EHP00378 Collector-base capacitance CCB = f (VCBO) Emitter-base capacitance CEB = f (VEBO) BC 846...850 EHP00361 fT 5 C CB0 ( C EB0 ) 12 pF 10 8 C EB 10 2 6 5 4 C CB 2 10 1 10 -1 5 10 0 5 10 1 mA ΙC 10 2 0 10 -1 5 10 0 V VCB0 10 1 (VEB0 ) Collector cutoff current ICBO = f (TA) VCB = 30V 10 4 nA EHP00381 Collector-emitter saturation voltage IC = f (VCEsat), h FE = 20 10 2 EHP00380 Ι CB0 10 3 5 10 2 5 10 1 5 10 5 10 -1 0 ΙC mA 100 C 25 C -50 C max 10 1 5 typ 10 5 0 0 50 100 C TA 150 10 -1 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat 5 Nov-29-2001 BC857S DC current gain hFE = f (IC ) VCE = 5V 10 3 EHP00382 Base-emitter saturation voltage IC = f (VBEsat), hFE = 20 10 2 mA EHP00379 h FE 5 100 C 25 C ΙC 100 C 25 C -50 C 10 2 5 -50 C 10 1 5 10 1 5 10 0 5 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 2 10 -1 0 0.2 0.4 0.6 0.8 ΙC V 1.2 V BEsat 6 Nov-29-2001