SDT08S60_08

SDT08S60 Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery thinQ! SiC Schottky Diode Product Summary VRRM Qc IF 600 24 8 PG-TO220-2-2. V nC A Type SDT08S60 Package PG-TO220-2-2. Ordering Code Q67040S4647 Marking D08S60 Pin 1 Pin 2 C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous forward current, TC=100°C RMS forward current, f=50Hz TC=25°C, tp=10ms Symbol IF IFRMS Value 8 11.3 26 32 80 3.4 600 600 65 -55... +175 Unit A Surge non repetitive forward current, sine halfwave IFSM Repetitive peak forward current Tj=150°C, TC=100°C, D=0.1 IFRM IFMAX ∫i2dt VRRM VRSM Ptot Tj , Tstg Non repetitive peak forward current tp=10µs, TC=25°C i 2t value, TC=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature A²s V W °C Rev. 2.2 Page 1 2008-06-02 SDT08S60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded RthJC RthJA 2.3 62 K/W Symbol min. Values typ. max. Unit Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage IF=8A, Tj=25°C IF=8A, Tj=150°C Symbol min. VF IR - Values typ. max. Unit V 1.5 1.7 28 70 1.7 2.1 µA 300 1500 Reverse current V R=600V, T j=25°C V R=600V, T j=150°C Rev. 2.2 Page 2 2008-06-02 SDT08S60 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Total capacitive charge V R=400V, IF=8A, diF/dt=200A/µs, T j=150°C Unit max. nC ns pF typ. 24 n.a Qc trr C - Switching time V R=400V, IF=8A, diF/dt=200A/µs, T j=150°C Total capacitance V R=0V, T C=25°C, f=1MHz V R=300V, T C=25°C, f=1MHz V R=600V, T C=25°C, f=1MHz - 280 26 18 - Rev. 2.2 Page 3 2008-06-02 SDT08S60 1 Power dissipation Ptot = f (TC) 70 SDT08S60 2 Diode forward current IF = f (TC) parameter: Tj≤175 °C W 9 A 7 6 60 55 50 Ptot 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 °C 190 IF 5 4 3 2 1 0 0 45 20 40 60 80 100 120 140 TC °C 180 TC 3 Typ. forward characteristic IF = f (VF) 4 Typ. forward power dissipation vs. average forward current PF(AV)=f(IF) TC=100°C, d = tp/T 36 parameter: Tj , tp = 350 µs 16 A 12 PF(AV) 150°C 125°C 100°C 25°C -40°C W 28 24 20 d=1 d=0,5 d=0,2 d=0,1 IF 10 8 16 6 12 4 8 4 0 0 2 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 V 2.5 VF 2 4 6 8 10 12 16 A IF(AV) Rev. 2.2 Page 4 2008-06-02 SDT08S60 5 Typ. reverse current vs. reverse voltage I R=f(VR) 10 2 6 Transient thermal impedance ZthJC = f (t p) parameter : D = t p/T µA 10 1 K/W 10 1 SDT08S60 10 0 IR 10 0 150°C 125°C 100°C 25°C ZthJC 10 -1 10 -2 10 -1 D = 0.50 0.20 0.10 0.05 single pulse 0.02 0.01 10 -3 10 -2 10 -4 10 -3 100 150 200 250 300 350 400 450 500 V 600 VR 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 7 Typ. capacitance vs. reverse voltage C= f(V R) 8 Typ. C stored energy EC=f(V R) 5 parameter: TC = 25 °C, f = 1 MHz pF 300 µJ 4 3.5 240 220 EC 1 2 3 10 V VR 200 180 160 140 120 100 80 60 40 20 00 10 10 10 3 2.5 2 1.5 1 0.5 0 0 C 100 200 300 400 V VR 600 Rev. 2.2 Page 5 2008-06-02 SDT08S60 9 Typ. capacitive charge vs. current slope Q c=f(diF /dt) parameter: Tj = 150 °C 35 nC IF*2 IF*0.5 25 IF Qc 20 15 10 5 0 0 100 200 300 400 500 600 700 800A/µs 1000 diF /dt Rev. 2.2 Page 6 2008-06-02 SDT08S60 PG-TO-220-2-2 Rev. 2.2 Page 7 2008-06-02 SDT08S60 Rev. 2.2 Page 8 2008-06-02