SIGC54T60R3

SIGC54T60R3 IGBT Chip FEATURES: • 600V Trench & Field Stop technology • low VCE(sat) • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC54T60R3 VCE 600V ICn 100A Die Size 5.97 x 8.97 mm2 Package sawn on foil Ordering Code Q67050A4341-A101 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max. possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject ink dot size Recommended storage environment 5.97 x 8.97 ( 2.489 x 1.767 ) x 4 ( 2.789 x 1.995 ) x 4 1.615 x 0.817 53.6 / 40 70 150 90 245 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al,