CA3054

CA3054 Data Sheet September 1998 Dual Independent Differential Amp for Low Power Applications from DC to 120MHz File Number 388.4 Features • Two Differential Amplifiers on a Common Substrate • Independently Accessible Inputs and Outputs The CA3054 consists of two independent differential amplifiers with associated constant current transistors on a common monolithic substrate. The six NPN transistors which comprise the amplifiers are general purpose devices which exhibit low 1/f noise and a value of fT in excess of 300MHz. These feature make the CA3054 useful from DC to 120MHz. Bias and load resistors have been omitted to provide maximum application flexibility. The monolithic construction of the CA3054 provides close electrical and thermal matching of the amplifiers. This feature makes these devices particularly useful in dual channel applications where matched performance of the two channels is required. • Temperature Range . . . . . . . . . . . . . . . . . . . 0oC to 85oC Applications • Dual Sense Amplifiers • Dual Schmitt Triggers • Multifunction Combinations - RF/Mixer/Oscillator; Converter/IF • IF Amplifiers (Differential and/or Cascode) • Product Detectors • Doubly Balanced Modulators and Demodulators Ordering Information PART NUMBER (BRAND) • Maximum Input Offset Voltage . . . . . . . . . . . . . . . . . ±5mV • Balanced Quadrature Detectors TEMP. RANGE (oC) PACKAGE PKG. NO. • Cascade Limiters CA3054 0 to 85 14 Ld PDIP E14.3 • Synchronous Detectors CA3054M96 (3054) 0 to 85 14 Ld SOIC Tape and Reel M14.15 • Pairs of Balanced Mixers • Synthesizer Mixers • Balanced (Push-Pull) Cascode Amplifiers Pinout CA3054 (PDIP, SOIC) TOP VIEW 1 2 14 Q2 Q1 3 4 12 Q3 11 Q4 SUBSTRATE 5 6 13 Q5 Q6 10 NC 9 8 7 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 CA3054 Absolute Maximum Ratings TA = 25oC Thermal Information Thermal Resistance (Typical, Note 2) θJA (oC/W) PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140 Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . . .175oC Maximum Junction Temperature (Plastic Package) . . . . . . . .150oC Maximum Storage Temperature Range . . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) Maximum Power Dissipation (Any One Transistor) . . . . . . . 300mW Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . 15V Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . 20V Collector-to-Substrate Voltage, VCIO (Note 1) . . . . . . . . . . . . . . 20V Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . 0oC to 85oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. The collector of each transistor of the CA3054 is isolated from the substrate by an integral diode. The substrate must be connected to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide for normal transistor action. The substrate should be maintained at signal (AC) ground by means of a suitable grounding capacitor, to avoid undesired coupling between transistors. 2. θJA is measured with the component mounted on an evaluation PC board in free air. Maximum Voltage Ratings Maximum Current Ratings The following chart gives the range of voltages which can be applied to the terminals listed vertically with respect to the terminals listed horizontally. For example, the voltage range of the vertical Terminal 2 with respect to Terminal 4 is +15V to -5V. (NOTE 4) TERM NO. 13 13 14 0, -20 1 2 Note 3 +5, -5 3 4 6 7 8 9 11 12 5 (NOTE 4) TERM IIN NO. mA IOUT mA Note 3 +15, -5 Note 3 Note 3 Note 3 Note 3 Note 3 Note 3 Note 3 13 5 0.1 14 Note 3 Note 3 Note 3 +20, 0 Note 3 Note 3 Note 3 Note 3 Note 3 Note 3 +20, 0 14 50 0.1 1 +20, 0 Note 3 +20, 0 Note 3 Note 3 Note 3 Note 3 Note 3 Note 3 +20, 0 1 50 0.1 2 Note 3 +15, -5 Note 3 Note 3 Note 3 Note 3 Note 3 3 +1, -5 4 Note 3 Note 3 2 5 0.1 Note 3 Note 3 Note 3 Note 3 Note 3 Note 3 Note 3 3 5 0.1 Note 3 Note 3 Note 3 Note 3 Note 3 Note 3 Note 3 4 0.1 50 Note 3 +15, -5 Note 3 6 5 0.1 6 0, -20 Note 3 +5, -5 7 Note 3 Note 3 Note 3 Note 3 +20, 0 7 50 0.1 8 +20, 0 Note 3 Note 3 +20, 0 8 50 0.1 9 Note 3 +15, -5 Note 3 9 5 0.1 11 -1, -5 Note 3 11 5 0.1 12 Note 3 12 0.1 50 5 Ref. Substrate NOTES: 3. Voltages are not normally applied between these terminals. Voltages appearing between these terminals will be safe if the specified limits between all other terminals are not exceeded. 4. Terminal No. 10 of CA3054 is not used. Electrical Specifications TA = 25oC PARAMETER DC CHARACTERISTICS SYMBOL TEST CONDITIONS MIN TYP MAX UNIT 5 mV For Each Differential Amplifier Input Offset Voltage (Figure 8) VIO VCB = 3V, IE(Q3) = IE(Q4) = 2mA - 0.45 Input Offset Current (Figure 9) IIO VCB = 3V, IE(Q3) = IE(Q4) = 2mA - 0.3 2 µA II VCB = 3V, IE(Q3) = IE(Q4) = 2mA - 10 24 µA I C(Q1) I C(Q5) ------------------ or -----------------I C(Q2) I C(Q6) VCB = 3V, IE(Q3) = IE(Q4) = 2mA - 0.98 to 1.02 - - ∆V IO ----------------∆T VCB = 3V, IE(Q3) = IE(Q4) = 2mA - 1.1 - µV/oC Input Bias Current (Figure 5) Quiescent Operating Current Ratio (Figure 5) Temperature Coefficient Magnitude of Input Offset Voltage (Figure 7) 2 CA3054 Electrical Specifications TA = 25oC (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT FOR EACH TRANSISTOR DC Forward Base-to-Emitter Voltage (Figure 8) Temperature Coefficient of Base-to-Emitter Voltage (Figure 6) Collector Cutoff Current (Figure 4) VBE ∆V BE ---------------∆T ICBO VCB = 3V IC = 50µA - 0.630 0.700 V IC = 1mA - 0.715 0.800 V IC = 3mA - 0.750 0.850 V IC = 10mA - 0.800 0.900 V VCB = 3V, IC = 1mA - -1.9 - µV/oC VCB = 10V, IE = 0 - 0.002 100 nA Collector-to-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 15 24 - V Collector-to-Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 20 60 - V Collector-to-Substrate Breakdown Voltage V(BR)CIO IC = 10µA, ICI = 0 20 60 - V Emitter-to-Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 7 - V DYNAMIC CHARACTERISTICS Common Mode Rejection Ratio for each Amplifier (Figures 1, 10) CMRR VCC = 12V, VEE = -6V, VX = -3.3V, f = 1kHz - 100 - dB AGC Range, One Stage (Figures 2, 11) AGC VCC = 12V, VEE = -6V, VX = -3.3V, f = 1kHz - 75 - dB A VCC = 12V, VEE = -6V, VX = -3.3V, f = 1kHz - 32 - dB AGC VCC = 12V, VEE = -6V, VX = -3.3V, f = 1kHz - 105 - dB A VCC = 12V, VEE = -6V, VX = -3.3V, f = 1kHz - 60 - dB Voltage Gain, Single Stage Double-Ended Output (Figures 2, 11) AGC Range, Two Stage (Figures 3, 12) Voltage Gain, Two Stage Double-Ended Output (Figures 3, 12) Low Frequency, Small Signal Equivalent Circuit Characteristics (For Single Transistor) Forward Current Transfer Ratio (Figure 13) hFE f = 1kHz, VCE = 3V, IC = 1mA - 110 - - Short Circuit Input Impedance (Figure 13) hIE f = 1kHz, VCE = 3V, IC = 1mA - 3.5 - kΩ Open Circuit Output Impedance (Figure 13) hOE f = 1kHz, VCE = 3V, IC = 1mA - 15.6 - µS Open Circuit Reverse Voltage Transfer Ratio (Figure 13) hRE f = 1kHz, VCE = 3V, IC = 1mA - 1.8 x 10-4 - - 1/f Noise Figure for Single Transistor NF f = 1kHz, VCE = 3V - 3.25 - dB Gain Bandwidth Product for Single Transistor (Figure 14) fT VCE = 3V, IC = 3mA - 550 - MHz Admittance Characteristics; Differential Circuit Configuration (For Each Amplifier) Forward Transfer Admittance (Figure 15) Y21 VCB = 3V, f = 1MHz Each Collector IC ≈ 1.25mA - -20 + j0 - mS Input Admittance (Figure 16) Y11 VCB = 3V, f = 1MHz Each Collector IC ≈ 1.25mA - 0.22 + j0.1 - mS Output Admittance (Figure 17) Y22 VCB = 3V, f = 1MHz Each Collector IC ≈ 1.25mA - 0.01 + j0 - mS Reverse Transfer Admittance (Figure 18) Y12 VCB = 3V, f = 1MHz Each Collector IC ≈ 1.25mA - -0.003 + j0 - mS 3 CA3054 Electrical Specifications TA = 25oC (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Admittance Characteristics; Cascode Circuit Configuration (For Each Amplifier) Forward Transfer Admittance (Figure 19) Y21 VCB = 3V, f = 1MHz Total Stage IC ≈ 2.5 mA - 68 - j0 - mS Input Admittance (Figure 20) Y11 VCB = 3V, f = 1MHz Total Stage IC ≈ 2.5 mA - 0.55 + j0 - mS Output Admittance (Figure 21) Y22 VCB = 3V, f = 1MHz Total Stage IC ≈ 2.5 mA - 0+ j0.02 - mS Reverse Transfer Admittance (Figure 22) Y12 VCB = 3V, f = 1MHz Total Stage IC ≈ 2.5 mA - 0.004 j0.005 - µS NF f = 100MHz - 8 - dB Noise Figure Test Circuits VX 0.1µF 1kΩ VIN = 0.3VRMS VX VCC = +12V VIN = 10mVRMS 7 11 7 10µF 9 9 VOUT ICUT 6 SIGNAL SOURCE 8 0.5kΩ 8 1kΩ 12 0.5kΩ 1kΩ 1kΩ VCC = +12V 0.1µF VEE = -6V VEE = -6V FIGURE 1. COMMON MODE REJECTION RATIO TEST SETUP FIGURE 2. SINGLE STAGE VOLTAGE GAIN TEST SETUP VCC = +12V 1µF 1kΩ 1kΩ 0.1µF 1kΩ VIN = 1mVRMS 2 10µF 0.5kΩ 7 1 9 4 0.1µF 6 1kΩ SIGNAL SOURCE VOUT ICUT 3 1kΩ VEE = -6V 12 11 8 14 13 VX 1kΩ 1kΩ 0.5kΩ 1kΩ 1µF VCC = +12V FIGURE 3. TWO STAGE VOLTAGE GAIN TEST SETUP 4 12 0.5kΩ VCC = +12V 0.1µF VOUT ICUT 1kΩ 6 SIGNAL SOURCE 0.1µF 1kΩ 11 10µF VCC = +12V CA3054 102 100 VCB = 3V TA = 25oC IE = 0 10 INPUT BIAS CURRENT (µA) COLLECTOR CUTOFF CURRENT (nA) Typical Performance Curves VCB = 15V VCB = 10V VCB = 5V 1 10-1 10-2 10-3 10.0 10-4 0 25 50 75 100 TEMPERATURE (oC) (NOTE) 1.0 0.1 125 1.0 COLLECTOR CURRENT (mA) 10 NOTE: For CA3054 use data from 0oC to 85oC only. FIGURE 5. INPUT BIAS CURRENT vs COLLECTOR CURRENT FOR EACH TRANSISTOR 5 VCB = 3V VCB = 3V 1.0 4 OFFSET VOLTAGE (mV) BASE-TO-EMITTER VOLTAGE (V) FIGURE 4. COLLECTOR-TO-BASE CUTOFF CURRENT vs TEMPERATURE FOR EACH TRANSISTOR 0.9 0.8 0.7 0.5 IE = 3mA IE = 1mA IE = 0.5mA 0.4 -75 -50 0.6 -25 0 25 IE = 10mA 3 2 0.75 IE = 1mA 0.50 IE = 0.1mA 0.25 50 75 100 0 -75 125 -50 TEMPERATURE (oC) (NOTE) 3 VBE 0.6 2 0.5 1 VIO = |VBE1 - VBE2| 0 10 FIGURE 8. STATIC BASE-TO-EMITTER VOLTAGE AND INPUT OFFSET VOLTAGE FOR DIFFERENTIAL PAIRS vs EMITTER CURRENT INPUT OFFSET CURRENT (µA) 0.7 INPUT OFFSET VOLTAGE Q1 AND Q2 (mV) BASE-TO-EMITTER VOLTAGE (V) 10 4 5 50 75 100 125 FIGURE 7. OFFSET VOLTAGE vs TEMPERATURE FOR DIFFERENTIAL PAIRS VCB = 3V TA = 25oC 0.1 1.0 EMITTER CURRENT (mA) 25 NOTE: For CA3054 use data from 0oC to 85oC only. FIGURE 6. BASE-TO-EMITTER VOLTAGE FOR EACH TRANSISTOR vs TEMPERATURE 0.4 0.01 0 TEMPERATURE (oC) (NOTE) NOTE: For CA3054 use data from 0oC to 85oC only. 0.8 -25 VCB = 3V TA = 25oC 1.0 0.1 0.01 0.01 0.1 1.0 10 COLLECTOR CURRENT (mA) FIGURE 9. INPUT OFFSET CURRENT FOR MATCHED DIFFERENTIAL PAIRS vs COLLECTOR CURRENT CA3054 Typical Performance Curves (Continued) SINGLE STAGE VOLTAGE GAIN (dB) COMMON MODE REJECTION RATIO (dB) 100 VCC = 12V VEE = -6V 110 f = 1kHz 100 90 80 -1 -2 -3 BIAS VOLTAGE ON TERMINAL 11 (V) 50 25 0 -25 0 -4 100 NORMALIZED h PARAMETERS 25 0 -25 -50 -1 -2 -3 -4 -5 -6 BIAS VOLTAGE ON TERMINALS 3 AND 11 (V) -7 FIGURE 12. TWO STAGE VOLTAGE GAIN CHARACTERISTIC 800 700 600 500 400 300 200 100 1 2 3 hIE 10 4 5 6 7 8 9 10 11 COLLECTOR CURRENT (mA) 12 13 14 FIGURE 14. GAIN BANDWIDTH PRODUCT (fT) vs COLLECTOR CURRENT 6 -4 -5 hFE = 110 hIE = 3.5kΩ hRE = 1.88 x 10-4 hOE = 15.6µS AT 1mA -6 -7 hOE hRE hFE 1.0 hRE hIE 0.1 0.01 0.1 1.0 COLLECTOR CURRENT (mA) 10 FIGURE 13. FORWARD CURRENT TRANSFER RATIO (hFE), SHORT CIRCUIT INPUT IMPEDANCE (hIE), OPEN CIRCUIT OUTPUT IMPEDANCE (hOE), AND OPEN CIRCUIT REVERSE VOLTAGE TRANSFER RATIO (hRE) vs COLLECTOR CURRENT FOR EACH TRANSISTOR FORWARD TRANSFER SUSCEPTANCE OR CONDUCTANCE (mS) 900 0 VCB = 3V f = 1kHz TA = 25oC 30 VCB = 3V TA = 25oC 1000 -3 100 50 0 -2 FIGURE 11. SINGLE STAGE VOLTAGE GAIN CHARACTERISTIC VCC = 12V VEE = -6V f = 1kHz SIGNAL INPUT = 1mVRMS 75 -1 BIAS VOLTAGE ON TERMINAL 11 (V) FIGURE 10. COMMON MODE REJECTION RATIO CHARACTERISTIC TWO STAGE VOLTAGE GAIN (dB) 75 -50 0 GAIN BANDWIDTH PRODUCT (MHz) VCC = 12V VEE = -6V f = 1kHz SIGNAL INPUT = 10mVRMS 20 DIFFERENTIAL CONFIGURATION IC (EACH TRANSISTOR) ≅ 1.25mA VCB = 3V TA = 25oC 10 b21 0 -10 g21 -20 0.1 1.0 10 FREQUENCY (MHz) 100 FIGURE 15. FORWARD TRANSFER ADMITTANCE (Y21) vs FREQUENCY CA3054 Typical Performance Curves 0.5 OUTPUT CONDUCTANCE (mS) VCB = 3V TA = 25oC 4 3 b11 2 g11 1 2 0.3 0.2 1 b22 0.1 g22 0 100 0 10 FREQUENCY (MHz) 1000 DIFFERENTIAL CONFIGURATION VCB = 3V IC (EACH TRANSISTOR) ≅ 1.25mA TA = 25oC 1 100 b12 10 0.1 g12 0.01 1 -g12 0.1 0.001 0.0001 0.1 1 10 FREQUENCY (MHz) 100 0.01 1000 FIGURE 18. REVERSE TRANSFER ADMITTANCE (Y12) vs FREQUENCY 5 CASCODE CONFIGURATION IC (STAGE) ≅ 2.5mA VCB = 3V TA = 25oC 3 2 0 0.1 g11 b11 1 10 FREQUENCY (MHz) 100 200 FIGURE 20. INPUT ADMITTANCE (Y11) vs FREQUENCY 7 g21 60 40 CASCODE CONFIGURATION IC (STAGE) ≅ 2.5mA 20 VCB = 3V TA = 25oC 0 -20 b21 -40 1 10 FREQUENCY (MHz) 100 200 FIGURE 19. FORWARD TRANSFER ADMITTANCE (Y21) vs FREQUENCY g22 4 1 10 FREQUENCY (MHz) 80 0.1 OUTPUT CONDUCTANCE (mS x 10-4) 6 1 FIGURE 17. OUTPUT ADMITTANCE (Y22) vs FREQUENCY REVERSE TRANSFER SUSCEPTANCE (µS) FIGURE 16. INPUT ADMITTANCE (Y11) 10 0.1 100 0 2 -2 -4 -6 CASCODE CONFIGURATION IC (STAGE) ≅ 2.5mA VCB = 3V TA = 25oC 1 -8 b22 -10 0 -12 0.1 1 10 FREQUENCY (MHz) 100 FIGURE 21. OUTPUT ADMITTANCE (Y22) vs FREQUENCY OUTPUT SUSCEPTANCE (mS) 1 FORWARD TRANSFER CONDUCTANCE OR SUSCEPTANCE (mS) 0.1 REVERSE TRANSFER CONDUCTANCE (mS) VCB = 3V TA = 25oC 0.4 0 INPUT CONDUCTANCE OR SUSCEPTANCE (mS) DIFFERENTIAL CONFIGURATION IC (EACH TRANSISTOR) ≅ 1.25mA OUTPUT SUSCEPTANCE (mS) 3 DIFFERENTIAL CONFIGURATION IC (EACH TRANSISTOR) ≅ 1.25mA 5 INPUT SUSCEPTANCE OR CONDUCTANCE (mS) (Continued) CA3054 REVERSE TRANSFER CONDUCTANCE OR SUSCEPTANCE (µS) Typical Performance Curves (Continued) 100 CASCODE CONFIGURATION IC (STAGE) ≅ 2.5mA VCB = 3V TA = 25oC 10 g12 1 -b12 0.1 0.01 0.001 0.1 1 10 FREQUENCY (MHz) 100 200 FIGURE 22. REVERSE TRANSFER ADMITTANCE (Y12) vs FREQUENCY All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. 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