CD4009

CD4009UBMS Data Sheet November 1994 File Number 3293 CMOS Hex Buffers/Converter CD4009UBMS Hex Buffer/Converter may be used as a CMOS to TTL or DTL logic-level converter or a CMOS highsink-current driver. The CD4049UB is the preferred hex buffer replacement for the CD4009UBMS in all applications except multiplexers. For applications not requiring high sink current or voltage conversion, the CD4069UB Hex Inverter is recommended. The CD4009UBMS is supplied in these 16 lead outline packages: Braze Seal DIP H4S Frit Seal DIP H1E Ceramic Flatpack H3X Features • Inverting Type • High-Voltage Type (20V Rating) • 100% Tested for Quiescent Current at 20V • Maximum Input Current of 1µA at 18V Over Full Package-Temperature Range; - 10nA at 18V and +25oC • 5V, 10V and 15V Parametric Ratings Applications • CMOS To DTL/TTL Hex Converter • CMOS Current “Sink” or “Source” Driver • CMOS High-to-Low Logic-Level Converter • Multiplexer - 1 to 6 or 6 to 1 Pinout CD4009UBMS TOP VIEW Functional Diagram 3 A VCC 1 G=A 2 A3 H=B 4 B5 I=C 6 C7 VSS 8 16 VDD 15 L = F 14 F 13 NC C 12 K = E 11 E 10 J = D 9D NC VCC 8 VSS 16 VDD F 14 15 L=F 13 1 D 9 10 J=D 7 6 I=C 5 B 4 H=B 2 G=A NC = NO CONNECTION 11 E 12 K=E NC = NO CONNECTION 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 CD4009UBMS Absolute Maximum Ratings DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . . -0.5V to VDD +0.5V DC Input Current, Any One Input. . . . . . . . . . . . . . . . . . . . . . . . .±10mA Operating Temperature Range . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG). . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Reliability Information Thermal Resistance. . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W Maximum Package Power Dissipation (PD) at +125oC For TA = -55oC to +100oC (Package Type D, F, K) . . . . . .500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor. . . . . . . . . . . . . . . .100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Input Leakage Current IIH VIN = VDD or GND VDD = 20 3 1 2 VDD = 18V Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 15V, No Load VDD = 15V, No Load (Note 3) VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Input Voltage Low (Note 2) Input Voltage High (Note 2) Input Voltage Low (Note 2) Input Voltage High (Note 2) VIL VIH VIL VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V 3 1, 2, 3 1, 2, 3 1 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 LIMITS TEMPERATURE +25oC +125oC -55oC +25oC +125oC -55oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC 4.0 12.5 1.0 2.5 V V V V MIN -100 -1000 -100 14.95 3.0 8.0 24.0 -2.8 0.7 MAX 2 200 2 100 1000 100 50 -0.2 -0.8 -0.45 -1.5 -0.7 2.8 UNITS µA µA µA nA nA nA nA nA nA mV V mA mA mA mA mA mA mA V V V PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND VOH > VOL < VDD/2 VDD/2 NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. 2 CD4009UBMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 9 10, 11 Propagation Delay TPLH VDD = 5V, VIN = VDD or GND 9 10, 11 Transition Time TTHL VDD = 5V, VIN = VDD or GND 9 10, 11 Transition Time TTLH VDD = 5V, VIN = VDD or GND 9 10, 11 NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND VDD = 10V, VIN = VDD or GND VDD = 15V, VIN = VDD or GND Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) VOL VOL VOH VOH IOL4 VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load VDD = 10V, No Load VDD = 4.5V, VOUT = 0.4V NOTES 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 TEMPERATURE -55oC, +25oC +125oC -55oC, +25oC +125oC -55oC, +25oC +125oC +25oC, +125oC, 55oC +25oC, +125oC, 55oC +25oC, +125oC, 55oC +25oC, +125oC, 55oC +25oC +125oC -55oC Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) Input Voltage Low IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VIL VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD =15V, VOUT = 13.5V VDD = 10V, VOH > 9V, VOL < 1V 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 1, 2 +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +125oC -55oC +25oC, +125oC, 55oC MIN 4.95 9.95 2.6 1.8 3.2 2.1 3.75 5.6 10.0 16.0 30.0 MAX 1 30 2 60 2 120 50 50 -0.15 -0.25 -0.58 -1.0 -0.33 -0.55 -1.1 -1.65 2 UNITS µA µA µA µA µA µA mV mV V V mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA mA V LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN MAX 60 81 140 189 70 95 350 473 UNITS ns ns ns ns ns ns ns ns PARAMETER Propagation Delay SYMBOL TPHL CONDITIONS (NOTE 1, 2) VDD = 5V, VIN = VDD or GND 3 CD4009UBMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Input Voltage High Propagation Delay Propagation Delay Propagation Delay Propagation Delay Transition Time Transition Time Input Capacitance NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH ∆VNTH VPTH ∆VPTH F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10µA VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V, VCC = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN -2.8 0.2 VOH > VDD/2 MAX 7.5 -0.2 ±1 2.8 ±1 VOL < VDD/2 1.35 x +25oC Limit UNITS µA V V V V V SYMBOL VIH TPHL TPLH TPHL TPLH TTHL TTLH CIN CONDITIONS VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V, VCC = 10V VDD = 15V, VCC = 15V VDD = 10V, VCC = 10V VDD = 15V, VCC = 15V VDD = 10V, VCC = 5V VDD = 15V, VCC = 5V VDD = 10V, VCC = 5V VDD = 15V, VCC = 5V VDD = 10V VDD = 15V VDD = 10V VDD = 15V Any Input NOTES 1, 2 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2 TEMPERATURE +25oC, +125oC, 55oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC MIN 8 MAX 40 30 80 60 30 20 70 60 40 30 150 110 22.5 UNITS V ns ns ns ns ns ns ns ns ns ns ns ns pF ns NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER Supply Current - MSI-1 Output Current (Sink) Output Current (Source) SYMBOL IDD IOL5 IOH5A ± 0.2µA ± 20% x Pre-Test Reading ± 20% x Pre-Test Reading DELTA LIMIT 4 CD4009UBMS TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test 1 (Post Burn-In) Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A Group B Subgroup B-5 Subgroup B-6 Group D MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3 Subgroups 1, 2, 3, 9, 10, 11 IDD, IOL5, IOH5A READ AND RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD 1, 7, 9 POST-IRRAD Table 4 READ AND RECORD PRE-IRRAD 1, 9 POST-IRRAD Table 4 CONFORMANCE GROUPS Group E Subgroup 2 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION OPEN GROUND VDD 1, 16 1, 3, 5, 7, 9, 11, 14, 16 1, 16 1, 3, 5, 7, 9, 11, 14, 16 2, 4, 6, 10, 12, 15 3, 5, 7, 9, 11, 14 9V ± -0.5V 50kHz 25kHz Static Burn-In 1 Note 1 2, 4, 6, 10, 12, 13, 15 3, 5, 7 - 9, 11, 14 Static Burn-In 2 Note 1 2, 4, 6, 10, 12, 13, 15 Dynamic Burn-In Note 1 Irradiation Note 2 NOTE: 13 2, 4, 6, 10, 12, 13, 15 8 8 8 1. Each pin except VDD and Pin 1 and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and Pin 1 and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V Schematic Diagram VDD VCC *ALL INPUTS ARE PROTECTED BY CMOS PROTECTION NETWORK VDD P N P * INPUT VDD GND N N OUTPUT VCC GND VSS CONFIGURATION: HEX COS/MOS TO DTL OR TTL CONVERTER (INVERTING) WIRING SCHEDULE: CONNECT VCC TO DTL OR TTL SUPPLY CONNECT VDD TO COS/MOS SUPPLY VSS 5 CD4009UBMS Typical Performance Characteristics AMBIENT TEMPERATURE (TA) = +25oC VI OUTPUT VOLTS (VO) 5 4 3 2 1 15V 5V 10V 5V SUPPLY VOLTS (VDD) = 15V TEST CONDITION: VCC = 5V OUTPUT VOLTS (VO) TA = +125oC TA = -55oC 5 4 3 2 1 10V SUPPLY VOLTS (VDD) = 15V MAX MIN VO 15V 15V 10V 5V 5V 0 2 4 6 8 10 12 INPUT VOLTS (VI) 14 0 2 4 8 6 INPUT VOLTS (VI) 10 12 FIGURE 1. MINIMUM AND MAXIMUM VOLTAGE TRANSFER CHARACTERISTICS AMBIENT TEMPERATURE (TA) = +25oC TYPICAL TEMPERATURE COEFFICIENT FOR ID = -0.3%/oC 100 80 60 10V 40 20 5V 0 2 4 6 8 10 12 DRAIN-TO-SOURCE VOLTS (VDS) 14 GATE-TO-SOURCE VOLTAGE (VGS) = 15V FIGURE 2. TYPICAL VOLTAGE TRANSFER CHARACTERISTICS AS FUNCTION OF TEMPERATURE OUTPUT LOW (SINK) CURRENT (IOL) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) AMBIENT TEMPERATURE (TA) = +25oC 60 50 40 30 10V 20 10 5V GATE-TO-SOURCE VOLTAGE (VGS) = 15V 0 5 10 15 20 DRAIN-TO-SOURCE VOLTS (VDS) FIGURE 3. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISITICS DRAIN-TO-SOURCE VOLTAGE (VDS) (V) OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) -7 -6 -5 -4 -3 -2 -1 0 -1 -2 -3 -4 -5 -10V -6 -7 -8 -15V -9 -10 -11 AMBIENT TEMPERATURE (TA) = +25oC -12 FIGURE 4. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS DRAIN-TO-SOURCE VOLTAGE (VDS) (V) OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) -7 -6 -5 -4 -3 -2 -1 0 GATE-TO-SOURCE VOLTAGE (VGS) = -5V GATE-TO-SOURCE VOLTAGE (VGS) = -5V -2 -4 -6 -8 -10 -12 -10V -15V AMBIENT TEMPERATURE (TA) = +25oC FIGURE 5. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS FIGURE 6. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS 6 CD4009UBMS LOW-TO-HIGH PROPAGATION DELAY TIME (tPLH) (ns) HIGH-TO-LOW PROPAGATION DELAY TIME tPHL (ns) 120 AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VDD) = 5V AMBIENT TEMPERATURE (TA) = +25oC 100 60 50 SUPPLY VOLTAGE (VDD) = 5V 40 30 20 10 15V 10V 80 60 10V 15V 40 20 0 0 20 40 60 80 100 120 LOAD CAPACITANCE (CL) (pF) 10 20 30 40 50 60 70 80 90 100 LOAD CAPACITANCE (CL) (pf) FIGURE 7. TYPICAL LOW-TO-HIGH PROPAGATION DELAY TIME vs LOAD CAPACITANCE FIGURE 8. TYPICAL HIGH-TO-LOW PROPAGATION DELAY TIME vs LOAD CAPACITANCE AMBIENT TEMPERATURE (TA) = +25oC LOW-TO-HIGH TRANSITION TIME (tTLH) (ns) HIGH-TO-LOW TRANSITION TIME tTHL (ns) AMBIENT TEMPERATURE (TA) = +25oC 250 SUPPLY VOLTAGE (VDD) = 5V 60 SUPPLY VOLTAGE (VDD) = 5V 50 40 30 20 10 15V 200 150 10V 15V 10V 100 50 0 0 20 40 60 80 100 120 LOAD CAPACITANCE (CL) (pF) 10 20 30 40 50 60 70 80 90 100 LOAD CAPACITANCE (CL) (pf) FIGURE 9. TYPICAL LOW-TO-HIGH TRANSITION TIME vs LOAD CAPACITANCE 104 POWER PER INVERTER/BUFFER (µW) 8 6 4 2 FIGURE 10. TYPICAL HIGH-TO-LOW TRANSISTION TIME vs LOAD CAPACITANCE AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VCC) = 15V 103 8 6 4 2 102 8 6 4 2 10V 10V 5V LOAD CAPACITANCE (CL) = 50pF CL = 15pF 10 2 4 10 102 103 INPUT FREQUENCY (fφ) kHz 68 2 4 68 2 4 68 104 FIGURE 11. TYPICAL DISSIPATION CHARACTERISTICS 7 CD4009UBMS Chip Dimensions and Pad Layout Dimensions in parentheses are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch) METALLIZATION: PASSIVATION: BOND PADS: Thickness: 11kÅ − 14kÅ, AL. 10.4kÅ - 15.6kÅ, Silane 0.004 inches X 0.004 inches MIN 0.0198 inches - 0.0218 inches DIE THICKNESS: All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 8