CD4086BMS

CD4086BMS December 1992 CMOS Expandable 4-Wide 2-Input AND-OR-INVERT Gate Pinout CD4086BMS TOP VIEW Features • Medium Speed Operation - tPHL = 90ns; tPLH = 140ns (Typ.) at 10V • High Voltage Type (20V Rating) • INHIBIT and ENABLE Inputs • Buffered Outputs • 100% Tested for Quiescent Current at 20V • Maximum Input Current of 1µA at 18V Over Full Package Temperature Range; 100nA at 18V and +25oC • Noise Margin (Over Full Package/Temperature Range) - 1V at VDD = 5V - 2V at VDD = 10V - 2.5V at VDD = 15V • Standardized Symmetrical Output Characteristics • 5V, 10V and 15V Parametric Ratings • Meets All Requirements of JEDEC Tentative Standard No. 13B, “Standard Specifications for Description of ‘B’ Series CMOS Devices” A1 B2 J = INH + ENABLE + AB + CD + EF + GH 3 NC 4 E5 F6 VSS 7 14 VDD 13 D 12 C 11 ENABLE/EXP 10 INHIBIT/EXP 9H 8G NC = NO CONNECTION Functional Diagram 10 INHIBIT/EXP Description CD4086BMS contains one 4-wide 2-input AND-OR-INVERT gate with an INHIBIT/EXP input and an ENABLE/EXP input. For a 4-wide A-O-I function INHIBIT/EXP is tied to VSS and ENABLE/EXP to VDD. See Figure 2 and its associated explanation for applications where a capability greater than 4-wide is required. The CD4076B is supplied in these 14 lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack H4H H1B H4F G H A B 1 2 C D E F 12 13 3 J 5 6 LOGIC 1 ≡ HIGH LOGIC 0 ≡ LOW VDD = 14 VSS = 7 NC = 4 8 9 11 ENABLE/EXP J = INH + ENABLE + AB + CD + EF + GH CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 File Number 3328 7-1055 Specifications CD4086BMS Absolute Maximum Ratings DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . . ±10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for 10s Maximum Reliability Information Thermal Resistance . . . . . . . . . . . . . . . . θja θjc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W o Maximum Package Power Dissipation (PD) at +125 C For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage IIL VIN = VDD or GND VDD = 20 VDD = 18V Input Leakage IIH VIN = VDD or GND VDD = 20 VDD = 18V Output Voltage Output Voltage Output Current (Sink) Output Current (Sink) Output Current (Sink) Output Current (Source) Output Current (Source) Output Current (Source) Output Current (Source) N Threshold Voltage P Threshold Voltage Functional VOL15 VOH15 IOL5 IOL10 IOL15 IOH5A IOH5B IOH10 IOH15 VNTH VPTH F VDD = 15V, No Load VDD = 15V, No Load (Note 3) VDD = 5V, VOUT = 0.4V VDD = 10V, VOUT = 0.5V VDD = 15V, VOUT = 1.5V VDD = 5V, VOUT = 4.6V VDD = 5V, VOUT = 2.5V VDD = 10V, VOUT = 9.5V VDD = 15V, VOUT = 13.5V VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Input Voltage Low (Note 2) Input Voltage High (Note 2) Input Voltage Low (Note 2) Input Voltage High (Note 2) VIL VIH VIL VIH VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 5V, VOH > 4.5V, VOL < 0.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V VDD = 15V, VOH > 13.5V, VOL < 1.5V 3 1 2 3 1 2 3 1, 2, 3 1, 2, 3 1 1 1 1 1 1 1 1 1 7 7 8A 8B 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 +25oC, LIMITS TEMPERATURE +25oC +125 C -55oC +25oC +125oC -55oC +25oC +125oC -55oC +125oC, +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC 3.5 11 1.5 4 V V V V -55oC o PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND MIN -100 -1000 -100 0.53 1.4 3.5 -2.8 0.7 MAX 2 200 2 100 1000 100 50 -0.53 -1.8 -1.4 -3.5 -0.7 2.8 UNITS µA µA µA nA nA nA nA nA nA mV V mA mA mA mA mA mA mA V V V +25oC, +125oC, -55oC 14.95 VOH > VOL < VDD/2 VDD/2 NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs. 3. For accuracy, voltage is measured differentially to VDD. Limit is 0.050V max. 7-1056 Specifications CD4086BMS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS TEMPERATURE 9 10, 11 TPLH1 VDD = 5V, VIN = VDD or GND 9 10, 11 TPHL2 VDD = 5V, VIN = VDD or GND 9 10, 11 TPLH2 VDD = 5V, VIN = VDD or GND 9 10, 11 TTHL TTLH VDD = 5V, VIN = VDD or GND 9 10, 11 +25oC +125oC, -55oC LIMITS MIN MAX 450 608 620 837 300 405 500 675 200 270 UNITS ns ns ns ns ns ns ns ns ns ns PARAMETER Propagation Delay DATA Propagation Delay DATA Propagation Delay INHIBIT Propagation Delay INHIBIT Transition Time SYMBOL TPHL1 CONDITIONS (NOTES 1, 2) VDD = 5V, VIN = VDD or GND +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC NOTES: 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55oC, +25oC +125oC VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC Output Voltage Output Voltage Output Voltage Output Voltage Output Current (Sink) VOL VOL VOH VOH IOL5 VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, No Load VDD = 10V, No Load VDD = 5V, VOUT = 0.4V 1, 2 1, 2 1, 2 1, 2 1, 2 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +125oC -55oC Output Current (Sink) IOL10 VDD = 10V, VOUT = 0.5V 1, 2 +125oC -55oC Output Current (Sink) IOL15 VDD = 15V, VOUT = 1.5V 1, 2 +125oC -55oC Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V 1, 2 +125oC -55oC Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V 1, 2 +125oC -55oC Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V 1, 2 +125oC -55oC 4.95 9.95 0.36 0.64 0.9 1.6 2.4 4.2 50 -0.36 -0.64 -1.15 -2.0 -0.9 -2.6 mV V V mA mA mA mA mA mA mA mA mA mA mA mA MIN MAX 1 30 2 60 2 120 50 UNITS µA µA µA µA µA µA mV 7-1057 Specifications CD4086BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Output Current (Source) SYMBOL IOH15 CONDITIONS VDD =15V, VOUT = 13.5V NOTES 1, 2 TEMPERATURE +125oC -55 C Input Voltage Low Input Voltage High Propagation Delay DATA Propagation Delay DATA Propagation Delay INHIBIT Propagation Delay INHIBIT Transition Time VIL VIH TPHL1 VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V, VOH > 9V, VOL < 1V VDD = 10V VDD = 15V TPLH1 VDD = 10V VDD = 15V TPHL2 VDD = 10V VDD = 15V TPLH2 VDD = 10V VDD = 15V TTHL1 TTLH1 CIN VDD = 10V VDD = 15V Any Input 1, 2 1, 2 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2 +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +25oC +25 C +25 C +25oC +25oC +25oC +25oC +25 C +25oC +25oC o o o o MIN 7 - MAX -2.4 -4.2 3 180 120 250 180 120 80 200 140 100 80 7.5 UNITS mA mA V V ns ns ns ns ns ns ns ns ns ns pF Input Capacitance NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K, Input TR, TF < 20ns. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH ∆VTN VTP ∆VTP F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10µA VDD = 10V, ISS = -10µA VSS = 0V, IDD = 10µA VSS = 0V, IDD = 10µA VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25 oC MIN -2.8 0.2 VOH > VDD/2 - MAX 7.5 -0.2 ±1 2.8 ±1 VOL < VDD/2 1.35 x +25oC Limit UNITS µA V V V V V +25oC +25oC +25oC +25oC +25oC ns NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER Supply Current - MSI-1 Output Current (Sink) Output Current (Source) SYMBOL IDD IOL5 IOH5A ± 0.2µA ± 20% x Pre-Test Reading ± 20% x Pre-Test Reading DELTA LIMIT 7-1058 Specifications CD4086BMS TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test 1 (Post Burn-In) Interim Test 2 (Post Burn-In) PDA (Note 1) Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A Group B Subgroup B-5 Subgroup B-6 Group D MIL-STD-883 METHOD 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3 Subgroups 1, 2, 3, 9, 10, 11 IDD, IOL5, IOH5A READ AND RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION MIL-STD-883 METHOD 5005 TEST PRE-IRRAD 1, 7, 9 POST-IRRAD Table 4 READ AND RECORD PRE-IRRAD 1, 9 POST-IRRAD Table 4 CONFORMANCE GROUPS Group E Subgroup 2 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In 1 Note 1 Static Burn-In 2 Note 1 Dynamic BurnIn Note 1 Irradiation Note 2 NOTES: 1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V ± 0.5V OPEN 3, 4 3, 4 4 3, 4 GROUND 1, 2, 5 - 13 7 7 7 VDD 14 1, 2, 5, 6, 8 - 14 14 1, 2, 5, 6, 8 - 14 3 1, 2, 5, 6, 8, 9, 12, 13 10, 11 9V ± -0.5V 50kHz 25kHz 7-1059 CD4086BMS VDD p p p n p p p p * A 1 n * B 2 p p n * C 12 n n * D 13 p p n p VDD n n n p p p * E 5 n n n n n n 3 J * F 6 p p VSS TERM 14 = VDD TERM 7 = VSS VDD VSS n * G H 8 * 9 n * ENABLE/EXP INHIBIT/EXP 11 10 * * ALL INPUTS PROTECTED BY CMOS PROTECTION NETWORK VSS FIGURE 1. SCHEMATIC DIAGRAM INHIBIT/EXP1 A1 B1 C1 D1 E1 F1 G1 H1 VDD ENABLE/EXP1 J2 = A1 B1 + C1 D1 + E1 FE + G1 H1 + A2 B2 + C2 D2 + E2 F2 + G2 H2 J1 VSS INHIBIT/EXP2 VSS A2 B2 C2 D2 J2 E2 F2 G2 H2 ENABLE/EXP2 FIGURE 2. TWO CD4086BMS’S CONNECTED AS AN 8-WIDE 2-INPUT A-O-I GATE Figure 2 above shows two CD4086’s utilized to obtain 8-wide 2-input A-O-I function. The output (J1) of one CD4086 is fed directly to the ENABLE/EXP2 line of the second CD4086. In a similar fashion, any NAND gate output can be fed directly into the ENABLE/EXP input to obtain a 5-wide A-O-I function. In addition, and AND gate output can be fed directly into the INHIBIT/EXP input with the same result. 7-1060 CD4086BMS Typical Performance Characteristics AMBIENT TEMPERATURE (TA) = +25oC 15 OUTPUT VOLTAGE (VO) - V SUPPLY VOLTAGE (VDD) = 15V VDD CURRENT PEAK 10V VI 10 14 VO CURRENT PEAK 5V 3 11 VDD 1 VDD 0 0 5 10 15 0 5 INPUT VOLTAGE (VI) - V 10 15 INPUT VOLTAGE (VI) - V 7 VSS ID 2 4 VDD 5 DRAINCURRENT (ID) - mA 6 OUTPUT VOLTAGE (VO) - V 15 MIN MAX VDD 10 VI 10 5 11 7 VSS 14 VO ID VDD AMBIENT TEMPERATURE (TA) = +25oC 10 5 FIGURE 3. TYPICAL VOLTAGE AND CURRENT TRANSFER CHARACTERISTICS AMBIENT TEMPERATURE (TA) = +25oC FIGURE 4. MINIMUM AND MAXIMUM VOLTAGE TRANSFER CHARACTERISTICS AMBIENT TEMPERATURE (TA) = +25oC OUTPUT LOW (SINK) CURRENT (IOL) (mA) OUTPUT LOW (SINK) CURRENT (IOL) (mA) 30 25 20 15 10 5 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 15.0 GATE-TO-SOURCE VOLTAGE (VGS) = 15V 12.5 10.0 7.5 5.0 2.5 10V 10V 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) 5V 0 5 10 15 DRAIN-TO-SOURCE VOLTAGE (VDS) (V) FIGURE 5. TYPICAL OUTPUT LOW (SINK) CURRENT CHARACTERISTICS DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 AMBIENT TEMPERATURE (TA ) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V FIGURE 6. MINIMUM OUTPUT LOW (SINK) CURRENT CHARACTERISTICS AMBIENT TEMPERATURE (TA) = +25oC OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) TRANSITION TIME (tTHL, tTLH) (ns) 0 0 -5 -10 -15 200 SUPPLY VOLTAGE (VDD) = 5V 150 -10V -20 -25 100 10V 50 15V -15V -30 0 0 20 40 60 80 100 LOAD CAPACITANCE (CL) (pF) FIGURE 7. TYPICAL OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS FIGURE 8. TYPICAL TRANSITION TIME vs LOAD CAPACITANCE 7-1061 CD4086BMS Typical Performance Characteristics (Continued) 105 POWER DISSIPATION (PD) (µW) AMBIENT TEMPERATURE (TA) = +25oC DRAIN-TO-SOURCE VOLTAGE (VDS) (V) -15 -10 -5 AMBIENT TEMPERATURE (TA) = +25oC GATE-TO-SOURCE VOLTAGE (VGS) = -5V SUPPLY VOLTAGE (VDD) = 15V 103 10V 102 5V CL = 50pF CL = 15pF -10V -10 -5 10V 0 0 OUTPUT HIGH (SOURCE) CURRENT (IOH) (mA) 10 4 101 -15V -15 100 10-1 100 101 102 103 104 FREQUENCY (f) (kHz) FIGURE 9. TYPICAL POWER DISSIPATION vs FREQUENCY 300 HIGH-TO-LOW LEVEL PROPAGATION DELAY TIME (tPHL) - ns 250 AMBIENT TEMPERATURE (TA) = +25oC SUPPLY VOLTAGE (VDD) = 5V FIGURE 10. MINIMUM OUTPUT HIGH (SOURCE) CURRENT CHARACTERISTICS AMBIENT TEMPERATURE (TA) = +25oC LOW-TO-HIGH LEVEL PROPAGATION DELAY TIME (tPLH) (ns) 500 200 400 SUPPLY VOLTAGE (VDD) = 5V 150 10V 300 100 200 10V 100 15V 0 20 40 60 80 100 LOAD CAPACITANCE (CL) (pF) 50 15V 0 20 40 60 80 100 LOAD CAPACITANCE (CL) - pF FIGURE 11. TYPICAL DATA OR ENABLE HIGH-TO-LOW LEVEL PROPAGATION DELAY TIME vs LOAD CAPACITANCE PROPAGATION DELAY TIME (tPHL, tPLH) (ns) FIGURE 12. TYPICAL DATA OR ENABLE LOW-TO-HIGH LEVEL PROPAGATION DELAY TIME vs LOAD CAPACITANCE AMBIENT TEMPERATURE (TA) = +25oC LOAD CAPACITANCE (CL) = 50pF 1250 1000 tPLH 750 500 tPHL 250 0 2.5 5 7.5 10 12.5 15 17.5 20 SUPPLY VOLTAGE (VDD) (V) FIGURE 13. TYPICAL DATA OR ENABLE PROPAGATION DELAY TIME vs SUPPLY VOLTAGE 7-1062 CD4086BMS Chip Dimensions and Pad Layout Dimensions in parenthesis are in millimeters and are derived from the basic inch dimensions as indicated. Grid graduations are in mils (10-3 inch). METALLIZATION: PASSIVATION: Thickness: 11kÅ − 14kÅ, AL. 10.4kÅ - 15.6kÅ, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 inches All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. 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