WBC-C0303AA-102-K

Wire Bondable Chip Capacitor WBC Capacitor Series • Silicon Dioxide/Silicon Nitride dielectric • Capacitance range from 10pF to 1000pF • Silicon substrate with gold or aluminum backing IRC’s wire-bondable chip capacitors are based on the successful TaNCAP® line of RC networks on silicon. The new chip capacitors have the advantage of excellent performance in extremely small sizes ranging from 20 to 60 mils square. Capacitors are 100% electrically tested with mil screening to MIL-STD-883 also available. For demanding hybrid circuit and/or chip and wire applications, specify IRC’s WBC capacitor series. Physical Data C0404 Top Bonding Pad Top Bonding Pad C0606 C0303 C0505 Back of chip C0202 Back of chip Manufacturing Capabilities Data Style C0202 C0303 C0404 C0505 C0606 Size 0.020″± 0.001 sq. (0.508mm ±0.025) 0.030″± 0.001 sq. (0.762mm ±0.025) 0.040″± 0.001 sq. (1.016mm ±0.025) 0.055″± 0.001 sq. (1.397mm ±0.025) 0.060″± 0.001 sq. (1.524mm ±0.025) Capacitance Range 10pF to 51pF 33pF to 100pF 56pF to 220pF 160pF to 360pF 160pF to 1000pF Voltage 40 55 50 20 20 General Note IRC reserves the right to make changes in product specification without notice or liability. All information is subject to IRC’s own data and is considered accurate at time of going to print. © IRC Advanced Film Division • 4222 South Staples Street • Corpus Christi Texas 78411 USA Telephone: 361 992 7900 • Facsimile: 361 992 3377 • Website: www.irctt.com A subsidiary of TT electronics plc WBC Capacitor Series Issue January 2009 Sheet 1 of 2 Wire Bondable Chip Capacitor Electrical Data Capacitance Range Dissipation Factor 1Khz, +25°C, 1VRMS Absolute Tolerance Operating Temperature Noise Substrate Material Substrate Thickness Bond Pad Metallization Backside Dielectric Passivation 10pF to 1000pF 0.5% min to ±5% -55°C to +125°C