IRHM4260

PD - 91332D RADIATION HARDENED POWER MOSFET THRU-HOLE ( T0-254AA) Product Summary Part Number IRHM7260 IRHM3260 IRHM4260 IRHM8260 Radiation Level R DS(on) 100K Rads (Si) 0.070Ω 300K Rads (Si) 0.070Ω 600K Rads (Si) 0.070Ω 1000K Rads (Si) 0.070Ω ID 35*A 35*A 35*A 35*A REF: MIL-PRF-19500/663 ® RAD Hard HEXFET TECHNOLOGY HEXFET TECHNOLOGY ™ IRHM7260 JANSR2N7433 200V, N-CHANNEL QPL Part Number QPL JANSR2N7433 JANSF2N7433 JANSG2N7433 JANSH2N7433 TO-254AA International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Absolute Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight *Current limited by pin diameter For footnotes refer to the last page 35* 25 161 250 2.0 ±20 500 35 25 5.7 -55 to 150 Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C 300 ( 0.063 in.(1.6mm) from case for 10s) 9.3 (Typical ) g www.irf.com 1 8/14/01 IRHM7260 Pre-Irradiation @ Tjj = 25°C (Unless Otherwise Specified) T Min 200 — — — 2.0 9.0 — — — — — — — — — — — — Electrical Characteristics Parameter Typ Max Units — 0.26 — — — — — — — — — — — — — — — 6.8 — — 0.070 0.077 4.0 — 25 250 100 -100 290 42 120 50 200 200 130 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID =25A ➃ VGS = 12V, ID = 35A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 25A ➃ VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID =35A VDS = 100V VDD = 100V, ID =35A VGS =12V, RG = 2.35Ω BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from Drain Lead (6mm/ 0.25in. from package) to source lead (6mm/0.25in from package) with Source wires bonded from Source Pin to Drain Pad C iss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 5300 1200 360 — — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 35* 140 1.8 820 8.5 Test Conditions A V nS µC Tj = 25°C, IS = 35A, VGS = 0V ➃ Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. *Current limited by pin diameter Thermal Resistance Parameter R thJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink Min Typ Max Units — — — — 0.50 — 48 0.21 — °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHM7260 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter Min Min 200 2.0 — — — — — — 100 K Rads(Si) Max 300 - 1000K Rads (Si) Min Max Units V nA µA Ω Ω V Test Conditions Test BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source" ➃ On-State Resistance (TO-3) Static Drain-to-Source" ➃ On-State Resistance (TO-254AA) Diode Forward Voltage" ➃ — 4.0 100 -100 25 0.070 0.070 1.8 200 1.25 — — — — — — — 4.5 100 -100 50 0.110 0.110 1.8 VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=160V, VGS =0V VGS = 12V, ID =25A VGS = 12V, ID =25A VGS = 0V, IS = 35A 1. Part numbers IRHM7260 (JANSR2N7433) 2. Part number IRHM3260,IRHM4260 and IRHM8260 (JANSF2N7433, JANSG2N7433 and JANSH2N7433) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br LET MeV/(mg/cm )) 28 36.8 Energy (MeV) 285 305 Range (µm) 43 39 VDS(V) @VGS=0V @VGS=-5V@VGS=-10V@VGS=-15V@VGS=-20V 190 180 170 125 — 100 100 100 50 — 200 150 VDS 100 50 0 0 -5 -10 VGS -15 -20 Cu Br Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHM7260 Pre-Irradiation 1000 100 I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 5.0V 10 1 10 20µs PULSE WIDTH TJ = 25 °C 100 5.0V 10 1 10 20µs PULSE WIDTH TJ = 150 °C 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 40A I D , Drain-to-Source Current (A) 2.0 TJ = 25 ° C TJ = 150 ° C 1.5 100 1.0 0.5 10 V DS = 50V 20µs PULSE WIDTH 5 6 7 8 9 10 11 12 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHM7260 10000 8000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 35A 16 VDS = 160V VDS = 100V VDS = 40V C, Capacitance (pF) Ciss 6000 12 4000 Coss 8 2000 Crss 4 0 1 10 100 0 FOR TEST CIRCUIT SEE FIGURE 13 0 40 80 120 160 200 240 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 100 10us 100 100us TJ = 150 ° C 10 1 TJ = 25 ° C 10 1ms 10ms 0.1 0.0 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 1 TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHM7260 Pre-Irradiation 50 LIMITED BY PACKAGE 40 VDS VGS RG RD D.U.T. + I D , Drain Current (A) -VDD 30 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 0.1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHM7260 1200 EAS , Single Pulse Avalanche Energy (mJ) 15V 1000 ID 9.7A 13.A BOTTOM 22A TOP VDS L DRIVER 800 600 RG D.U.T IAS tp + - VDD A V/5 20V 400 0.01Ω Fig 12a. Unclamped Inductive Test Circuit 200 0 25 50 75 100 125 150 V(BR)DSS tp Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHM7260 Pre-Irradiation Foot Notes: Foot ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L=0.82mH Peak IL = 35A, VGS =12V ➂ ISD ≤ 35A, di/dt ≤ 410A/µs, VDD ≤ 200V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. Total 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with V DS Bias. T otal 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-254AA .12 ( .005 ) 3.78 ( .149 ) 3.53 ( .139 ) -A13.84 ( .545 ) 13.59 ( .535 ) 6.60 ( .260 ) 6.32 ( .249 ) -B1.27 ( .050 ) 1.02 ( .040 ) 17.40 ( .685 ) 16.89 ( .665 ) 31.40 ( 1.235 ) 30.39 ( 1.199 ) 1 2 3 20.32 ( .800 ) 20.07 ( .790 ) 13.84 ( .545 ) 13.59 ( .535 ) LEGEND 1 - COLL 2 - EMIT 3 - GATE -C- 3.81 ( .150 ) 2X 3X 1.14 ( .045 ) 0.89 ( .035 ) .50 ( .020 ) .25 ( .010 ) M C AM B MC 3.81 ( .150 ) IRHM57163SED IRHM57163SEU LEGEND 1- DRAIN 2- SOURCE 3- GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 BERYLLIA Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. . Data and specifications subject to change without notice. 08/01 8 www.irf.com