IRHNB4260

PD - 91798A RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) Product Summary Part Number Radiation Level IRHNB7260 100K Rads (Si) IRHNB3260 300K Rads (Si) IRHNB4260 600K Rads (Si) IRHNB8260 1000K Rads (Si) R DS(on) 0.070Ω 0.070Ω 0.070Ω 0.070Ω ID 43A 43A 43A 43A IRHNB7260 200V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® SMD-3 International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight For footnotes refer to the last page 43 27 172 300 2.4 ±20 500 43 30 5.7 -55 to 150 300 (for 5 Sec.) 3.5 (Typical ) Pre-Irradiation Units A W W/°C V mJ A mJ V/ns o C g www.irf.com 1 12/7/01 IRHNB7260 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min 200 — — — 2.0 9.0 — — — — — — — — — — — — Typ Max Units — 0.26 — — — — — — — — — — — — — — — 4.0 — — 0.070 0.077 4.0 — 25 250 100 -100 290 42 120 50 200 200 130 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID =27A ➃ VGS = 12V, ID = 43A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 27A ➃ VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID =43A VDS = 100V VDD = 100V, ID =43A VGS =12V, RG = 2.35Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance nA nC ns nH Measured from the center of drain pad to center of source pad C iss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 5300 1200 360 — — — pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min Typ Max Units — — — — — — — — — — 43 172 1.8 820 8.5 Test Conditions A V nS µC Tj = 25°C, IS = 43A, VGS = 0V ➃ Tj = 25°C, IF = 43A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter R thJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units — — — 1.6 0.42 — °C/W Test Conditions Soldered to a 1” sq. copper-clad board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNB7260 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (SMD-3) Diode Forward Voltage ➃ 100K Rads (Si)1 300 - 1000K Rads (Si)2 Units V nA µA Ω Ω V Test Conditions VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=160V, VGS =0V VGS = 12V, ID =27A VGS = 12V, ID =27A VGS = 0V, IS = 43A Min 200 2.0 — — — — — — Max — 4.0 100 -100 25 0.070 0.070 1.8 Min 200 1.25 — — — — — — Max — 4.5 100 -100 50 0.110 0.110 1.8 1. Part number IRHNB7260 2. Part numbers IRHNB3260, IRHNB4260 and IRHNB8260 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LE T MeV/(mg/cm²)) 28 36.8 Energy (MeV) 285 305 Range (µm) @VGS=0V Cu Br 43 39 190 100 180 100 VD S(V) @VGS=-5V @VGS=-10V 170 100 @VGS=-15V 125 50 @VGS=-20V — — 200 150 VDS 100 50 0 0 -5 -10 VGS -15 -20 Cu Br Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNB7260 Pre-Irradiation 1000 I D , Drain-to-Source Current (A) 100 5.0V 10 1 10 20µs PULSE WIDTH  T = 25 C J ° 100 I D , Drain-to-Source Current (A)  VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 1000  VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP 100 5.0V 10 1 10 20µs PULSE WIDTH  T = 150 C J ° 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 3.0 R DS(on) , Drain-to-Source On Resistance (Normalized) ID  = 43A I D , Drain-to-Source Current (A) 2.5 2.0 TJ = 25 ° C  TJ = 150 ° C  100 1.5 1.0 0.5 10 5 6 7 8  V DS = 50V 20µs PULSE WIDTH 10 11 9 12 0.0 -60 -40 -20 VGS = 12V  0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 4 www.irf.com Pre-Irradiation IRHNB7260 10000 8000 VGS , Gate-to-Source Voltage (V)  VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 43 A  16  VDS = 160V VDS = 100V VDS = 40V C, Capacitance (pF) C iss  6000 12 4000 C oss C rss 8 2000 4 0 1 10 100 0 0 40 80 FOR TEST CIRCUIT  SEE FIGURE 13 120 160 200 240 VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R  DS(on) I D , Drain Current (A) 100 100  10us TJ = 150 ° C  10  100us TJ = 25 ° C  1 10 1ms  0.1 0.0 V GS = 0 V  0.5 1.0 1.5 2.0 2.5 3.0 3.5 1  TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100  10ms 1000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com 5 IRHNB7260 Pre-Irradiation 50 VDS VGS RD 40 D.U.T. + I D , Drain Current (A) RG -VDD 30 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01  SINGLE PULSE (THERMAL RESPONSE) 0.001 0.00001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.1 0.0001 0.001 0.01 1  P DM t1 t2 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNB7260 1200 EAS , Single Pulse Avalanche Energy (mJ) 1 5V 1000  ID 19A 27A BOTTOM 43A TOP VD S L D R IV E R 800 RG D .U .T IA S 600 + - VD D A VGS 20V tp 0 .0 1 Ω 400 Fig 12a. Unclamped Inductive Test Circuit 200 0 25 50 75 100 125 150 V (B R )D S S tp Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 12 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit www.irf.com 7 IRHNB7260 Pre-Irradiation Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 50V, starting TJ = 25°C, L=0.54mH Peak IL = 43A, VGS =12V ➂ ISD ≤ 43A, di/dt ≤ 410A/µs, VDD ≤ 200V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-3 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/01 8 www.irf.com