SI4420DY

PD - 93835 Si4420DY HEXFET® Power MOSFET l l l l l N-Channel MOSFET Low On-Resistance Low Gate Charge Surface Mount Logic Level Drive S S S G 1 8 7 A A D D D D 2 VDSS = 30V RDS(on) = 0.009Ω 3 6 4 5 Description This N-channel HEXFET® power MOSFET is produced using International Rectifier's advanced HEXFET power MOSFET technology. The low on-resistance and low gate charge inherent to this technology make this device ideal for low voltage or battery driven power conversion applications The SO-8 package with copper leadframe offers enhanced thermal characteristics that allow power dissipation of greater that 800mW in typical board mount applications. T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Single Pulse Avalanche Energy„ Gate-to-Source Voltage Junction and Storage Temperature Range Max. 30 ±12.5 ±10 ±50 2.5 1.6 0.02 400 ± 20 -55 to + 150 Units V A W W/°C mJ V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 50 Units °C/W www.irf.com 1 1/3/2000 Si4420DY Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 30 ––– ––– ––– 1.0 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.028 ––– ––– ––– 29 ––– ––– ––– ––– 52 8.7 12 15 10 55 47 2240 1100 150 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.009 VGS = 10V, ID = 12.5A ‚ Ω 0.013 VGS = 4.5V, ID = 10.5A ‚ ––– V VDS = VGS, ID = 250µA ––– S VDS = 15V, ID = 12.5A 1.0 VDS = 30V, VGS = 0V µA 5.0 VDS = 30V, VGS = 0V, T J = 55°C -100 VGS = -20V nA 100 VGS = 20V 78 ID = 12.5A ––– nC VDS = 15V ––– VGS = 10V, See Fig. 6 ‚ ––– VDD = 15V ––– ID = 1.0A ns ––– RG = 6.0Ω ––– RD = 15Ω, ‚ ––– VGS = 0V ––– pF VDS = 15V ––– ƒ = 1.0MHz, See Fig. 5‚ Source-Drain Ratings and Characteristics IS ISM VSD trr Parameter Continuous Source Current (Diode Conduction) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– 52 2.3 A 50 1.1 78 V ns Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 2.3A, VGS = 0V ‚ TJ = 25°C, IF = 2.3A D S Notes:  Repetitive rating; pulse width limited by max. junction temperature. „ Starting TJ = 25°C, L = 13mH RG = 25Ω, IAS = 8.9A. (See Figure 15) ‚ Pulse width ≤ 300µs; duty cycle ≤ 2%. ƒ When mounted on FR4 Board, t ≤10 sec 2 www.irf.com Si4420DY 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I D , Drain-to-Source Current (A) 100 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 4.5V 10 0.1 20µs PULSE WIDTH TJ = 25 °C 1 10 100 10 0.1 20µs PULSE WIDTH TJ = 150 °C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.0 1000 ID = 12.5A ID, Drain-to-Source Current (Α ) TJ = 25°C T J = -55°C T J = 150°C 100 R DS(on) , Drain-to-Source On Resistance (Normalized) 1.5 1.0 0.5 10 4.0 5.0 6.0 VDS = 25V 20µs PULSE WIDTH 7.0 8.0 9.0 VGS, Gate-to-Source Voltage (V) 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 Si4420DY 4000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 12.5A VDS = 24V VDS = 15V 16 3000 C, Capacitance (pF) Ciss 2000 12 8 Coss 1000 4 Crss 0 1 10 100 0 0 20 40 FOR TEST CIRCUIT SEE FIGURE 13 60 80 100 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) TJ = 25 ° C OPERATION IN THIS AREA LIMITED BY R DS(on) 100 I D , Drain Current (A) TJ = 150 ° C 100 100us 10 10 1ms 1 0.0 V GS = 0 V 1.0 2.0 3.0 4.0 5.0 1 0.1 TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 10ms 100 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com Si4420DY 14 12 80 100 I D , Drain Current (A) 10 P ower ( W ) 8 6 60 40 4 20 2 0 25 50 75 100 125 150 0 0.01 A 0.1 1 10 100 TC , Case Temperature ( ° C) T im e (sec ) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Typical Power Vs. Time 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t1 t2 0.01 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 Si4420DY R D S(on ) , D rain-to-S ource O n Resistance (Ω) R DS(on) , Drain-to -Source On Resistance ( Ω ) 0.20 0.012 0.16 0.010 0.12 ID = 12.5A 0.008 0.08 V G S = 1 0V V G S = 4 .5V 0.04 0.00 0 10 20 30 40 50 0.006 4.0 5.0 6.0 7.0 8.0 9.0 10.0 A I D , D rain C urren t (A ) VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Drain Current Fig 13. Typical On-Resistance Vs. Gate Voltage 3.0 1000 EAS , Single Pulse Avalanche Energy (mJ) TOP 800 VGS(th) , Variace (V) 2.5 BOTTOM ID 4.0A 7.1A 8.9A ID = 250µA 2.0 600 400 1.5 200 1.0 -60 -20 20 60 100 140 180 0 25 50 75 100 125 150 TJ , Temperature (°C) Starting TJ , Junction Temperature ( ° C) Fig 14. Typical Threshold Voltage Vs.Temperature Fig 15. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com Si4420DY SO-8 Package Outline SO-8 Part Marking Information www.irf.com 7 Si4420DY SO-8 Tape & Reel Information Dimensions are shown in millimeters (inches) T E R M IN A L N U M B E R 1 1 2.3 ( .4 84 ) 1 1.7 ( .4 61 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TE S : 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . 3 3 0.0 0 (12 .9 92 ) MAX. 14 .4 0 ( .5 6 6 ) 12 .4 0 ( .4 8 8 ) NOTE S : 1 . C O N T R O L LIN G D IM E N S IO N : M IL L IM E T E R . 2 . O U T L IN E C O N FO R M S T O E IA -48 1 & E IA -54 1. 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