Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION ・With TO-3 package ・High breakdown voltage APPLICATIONS ・Switching regulator ・Inverters ・Solenoid and relay drivers ・Motor controls
PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION
2N5804 2N5805
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL PARAMETER 2N5804 VCBO Collector-base voltage 2N5805 2N5804 VCEO Collector-emitter voltage 2N5805 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total Power Dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base 300 6 5 110 150 -65~200 V A W ℃ ℃ Open emitter 375 225 V CONDITIONS VALUE 300 V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.25 UNIT ℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5804 2N5805
CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
2N5804 VCEO(SUS) Collector-emitter sustaining voltage 2N5805 IC=0.1A ;IB=0
225 V 300
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=1A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=1A
1.5
V
ICEO
Collector cut-off current
VCE=RatedVCE; IB=0
10
mA
2N5804 ICEV Collector cut-off current 2N5805 VCE=RatedVCE; VBE(off)=1.5V
12 mA 10
IEBO
Emitter cut-off current
VEB=7V; IC=0
1.0
mA
hFE
DC current gain
IC=5A ; VCE=4V
20
100
fT
Trainsistion frequency
IC=1A ; VCE=10V
15
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N5804 2N5805
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
很抱歉,暂时无法提供与“2N5805”相匹配的价格&库存,您可以联系我们找货
免费人工找货