2N6436

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・Fast switching times ・Low collector saturation voltage ・Complement to type 2N6338~2N6341 APPLICATIONS ・For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6436 2N6437 2N6438 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER 2N6436 VCBO Collector-base voltage 2N6437 2N6438 2N6436 VCEO Collector-emitter voltage 2N6437 2N6438 VEBO IC ICM IBC PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open collector Open base Open emitter CONDITIONS VALUE -100 -120 -140 -80 -100 -120 -6 -25 -50 -10 200 200 -65~200 V A A A W ℃ ℃ V V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 0.875 UNIT ℃/W Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2N6436 V(SUS)CEO Collector-emitter sustaining voltage 2N6437 2N6438 VCEsat-1 VCEsat-2 VBE sat-1 VBE sat-2 ICEX ICBO Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current 2N6436 ICEO Collector cut-off current 2N6437 2N6438 IEBO hFE-1 hFE-2 hFE-3 COB fT Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency IC=-10A; IB=-1.0A IC=-25A; IB=-2.5A IC=-10A; IB=-1.0A IC=-25A; IB=-2.5A IC=-50mA ;IB=0 2N6436 2N6437 2N6438 CONDITIONS MIN -80 -100 -120 TYP. MAX UNIT V -1.0 -1.8 -1.8 -2.5 -10 -1.0 -10 V V V V μA mA μA VCE=Rated VCEO; VEB=-1.5V TC=150℃ VCB=Rated VCB; IE=0 VCE= -40V,IB=0 VCE=- 50V,IB=0 VCE= -60V,IB=0 VEB=-6V; IC=0 IC=-0.5A ; VCE=-2V IC=-10A ; VCE=-2V IC=-25A ; VCE=-2V IE=0 ; VCB=-10V;f=1MHz IC=-1A ; VCE=-10V;f=10MHz 40 30 20 12 -50 μA -100 μA 120 700 pF MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2N6436 2N6437 2N6438 Fig.2 outline dimensions 3