2SC2987

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2987 DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 140 140 5 12 20 120 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=5A ;IB=0.5A IC=5A ;IB=0.5A VCB=140V; IE=0 VEB=3V; IC=0 IC=2A ; VCE=5V IC=5A ; VCE=5V IC=1A ; VCE=5V IE=0;f=1MHz;VCB=10V 60 40 MIN 2SC2987 TYP. 0.6 1.4 MAX 1.5 2.0 50 50 320 UNIT V V μA μA 50 190 MHz pF hFE-1 Classifications R 60-120 Q 100-200 P 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2987 Fig.2 outline dimensions 3