2SC4150

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4150 DESCRIPTION ・With ITO-220 package ・Switching power transistor ・Low saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak Base current Base current-Peak Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 60 40 7 12 24 2 3 25 150 -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 5.0 UNIT ℃/W Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4150 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE fT PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current At rated volatge Collector cut-off current Emitter cut-off current DC current gain Transition frequency At rated volatge IC=6A ; VCE=2V IC=1.2A ; VCE=10V 70 50 MHz 0.1 mA 0.1 mA CONDITIONS IC=0.1A ;IB=0 IC=6A; IB=0.3A IC=6A; IB=0.3A MIN 40 0.3 1.2 TYP. MAX UNIT V V V Switching times ton ts tf Turn-on time Storage time Fall time IC=6A;IB1=0.6A IB2=0.6A ,RL=5Ω VBB2=4V 0.3 1.5 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4150 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3