2SD1276A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1276 2SD1276A DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB950/950A ・High DC current gain ・High-speed switching APPLICATIONS ・For power amplification PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SD1276 VCBO Collector-base voltage 2SD1276A 2SD1276 VCEO Collector-emitter voltage 2SD1276A VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-Peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ Open collector Open base 80 5 4 8 40 W V A A Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1276 2SD1276A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter breakdown voltage 2SD1276 IC=30mA , IB=0 2SD1276A IC=3A ;IB=12mA IC=5A ;IB=20mA VCE=3V; IC=3A 2SD1276 2SD1276A 2SD1276 2SD1276A VCB=60V ;IE=0 0.2 VCB=80V; IE=0 VCE=30V; IB=0 0.5 VCE=40V; IB=0 VEB=5V; IC=0 IC=3A ; VCE=0.5V IC=3A ; VCE=3V IC=0.5A; VCE=10V;f=1MHz 1000 2000 20 10000 MHz 2 mA mA mA 80 2 4 2.5 V V V CONDITIONS MIN 60 V TYP. MAX UNIT V(BR)CEO VCEsat-1 VCEsatVBE Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current ICBO ICEO Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IEBO hFE-1 hFE-2 fT Switching times ton ts tf Turn-on time Storage time Fall time IC=2A ;IB1=8mA IB2=-8mA;VCC=50V 0.5 4 1 μs μs μs hFE-2 Classifications Q 2000-5000 R 4000-10000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1276 2SD1276A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3